JPS63296217A - Suction of wafer at double-sided exposure type mask aligner and its suction structure - Google Patents
Suction of wafer at double-sided exposure type mask aligner and its suction structureInfo
- Publication number
- JPS63296217A JPS63296217A JP61246249A JP24624986A JPS63296217A JP S63296217 A JPS63296217 A JP S63296217A JP 61246249 A JP61246249 A JP 61246249A JP 24624986 A JP24624986 A JP 24624986A JP S63296217 A JPS63296217 A JP S63296217A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- mask
- exposure
- exposure mask
- suction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000001179 sorption measurement Methods 0.000 claims description 6
- 230000006837 decompression Effects 0.000 claims description 5
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 74
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、１度にウェハーの両面をパターン焼き付けす
る事の出来る両面露光型マスクアライナにおいて、ウェ
ハーの保持・矯正を確実に行って露光する事の出来る吸
着方法とその吸Ｒ構造に関する。[Detailed Description of the Invention] (Industrial Application Field) The present invention is a double-sided exposure type mask aligner that can print patterns on both sides of a wafer at once, and the wafer is reliably held and straightened for exposure. This article relates to possible adsorption methods and their adsorption structure.
（従来の技術〉
マスクアライナは、写真焼き付けと同じ原理でウェハー
の表面にＩＣパターンを焼き付ける装置であるが、最近
ではウェハーの大口径化に拍車がかかり、同時に作業合
理化のための両面露光などの新技術が積極的に導入され
て来ている。さて、このマスクアライナにおける両面露
光方式とは、上部に細密なＩＣパターンを形成した上？
Ｓ露光用マスクを配ｌし、下部に電極など比較的粗なパ
ターンを形成した下部露光用マスクを配置し、上下露光
用マスクの位置合わせを行った後、その間にウェハーを
挿入し、ウェハーと上下露光用マスクとの位置合わせを
行い、然る後、ウェハーを下部。(Conventional technology) A mask aligner is a device that prints IC patterns on the surface of a wafer using the same principle as photo printing, but recently there has been an increase in the diameter of wafers, and at the same time, there has been an increase in the diameter of wafers, and at the same time, techniques such as double-sided exposure are being used to streamline the process. New technologies are being actively introduced.Now, what is the double-sided exposure method in this mask aligner that involves forming a fine IC pattern on the top?
A lower exposure mask with a relatively rough pattern such as electrodes formed on the lower part is placed, and after aligning the upper and lower exposure masks, a wafer is inserted between them, and the wafer and Align the upper and lower exposure masks, and then lower the wafer.
露光用マスクの上に載置し、窒素雰囲気中で上下から露
光してパターン焼き付けを行うと言うものである。It is placed on an exposure mask and exposed from above and below in a nitrogen atmosphere to print a pattern.
（発明が解決しようとする問題点）
処が、前述のようにウェハーが大口径化すると熱処理や
強度不足など大口径化に伴ってウェハーに反りが発生し
、下部露光用マスク上に載置するだけでは反りの方向に
よってはウェハーが下部露光用マスクに十分密着せず、
ウェハーの焼き付け像にｒぼけ１が発生するとか、焼き
付け作業中に外部振動によりウェハーが位置ずれを起こ
すとか、ウェハーに十分に接近した上部露光用マスクに
ウェハーが吸着し、上部露光用マスクと共に上昇する事
があるなど各種作業ミスが発生していた。特に、下部露
光用マスクに比べて上部露光用マスクは細密であり、高
価であるので傷付きを恐れてウェハーに対しては非接触
で用いられるが、焼き付け像を鮮明にするためには出来
る限りウェハーに近接させねばならず、ウェハーの反り
などを考慮に入れると自ずと限界があった。(Problems to be Solved by the Invention) However, as mentioned above, when the diameter of the wafer becomes larger, the wafer becomes warped due to heat treatment or lack of strength, and the wafer is placed on the lower exposure mask. Depending on the direction of the warpage, the wafer may not be in close contact with the lower exposure mask.
R-blur 1 may occur in the printed image of the wafer, or the wafer may be misaligned due to external vibration during the printing process, or the wafer may be attracted to the upper exposure mask that is sufficiently close to the wafer and rise together with the upper exposure mask. A variety of work errors were occurring, such as things that had to be done. In particular, the upper exposure mask is finer and more expensive than the lower exposure mask, so it is used without contacting the wafer for fear of scratching, but in order to make the printed image as clear as possible, It had to be placed close to the wafer, which naturally had its limits when taking into account warping of the wafer.
本発明はかかる従来例の欠点に鑑みてなされたものでそ
の目的とするところは、ウェハーを下部露光用マスクに
吸着させる事により、ウェハーの反りを矯正すると共に
上部露光用マスクにウェハーが接触したり、吸着したり
する事を防ぎ、より焼き付け像の鮮明化を実現した両面
露光型マスクアライナのウェハー吸着方法とその吸着構
造を提供するにある。The present invention has been made in view of the drawbacks of the conventional example, and its purpose is to correct the warping of the wafer and to prevent the wafer from coming into contact with the upper exposure mask by adsorbing the wafer to the lower exposure mask. To provide a wafer adsorption method for a double-sided exposure type mask aligner and its adsorption structure, which prevents the wafer from being exposed or adsorbed and realizes a clearer printed image.
（問題点を解決するための手段）
本発明は、かかる従来の問題点を解決する為に、第１発
明では。(Means for Solving the Problems) The present invention provides a first aspect of the present invention in order to solve such conventional problems.
■ 上下位露光用マスク（１）（２）を位置合わせをし
て配置し、下部露光用マスク（１）上にウェハー（３）
を位置合わせして載置し、上下露光用マスク（１）（２
）を通してウェハー（３）の両面に焼き付け作業を行う
両面露光用マスクアライナ（＾）において、■ ウェハ
ー（３）を下部露光用マスク（１）上に載置した後、下
部露光用マスク（１）を通してウェハー（３）を下部露
光用マスク（１）に吸着し、■ 続いて上部露光用マス
ク（２）を降下させてウェハー（３）に近接させ、
■ 然る後ウェハー（３）の吸着を緩和乃至解除して露
光焼き付けを行い、
■ 露光焼き付け後再度ウェハー（３）を下部露光用マ
スク（１）に吸着した後、上部露光用マスク（２）を、
Ｅ昇させる、という技術的方法を採用しており、この技
術的方法を実現するために、第２発明で、■ 上下に露
光用マスク（１）（２）を配置し、下部露光用マスク（
１）上にウェハー（３）を載置し、上下露光用マスク（
１）（２）を通してウェハー（３）の両面に焼き付け作
業を行う両面露光用マスクアライナ（＾）において、
■ 下部露光用マスク（１）の下面に減圧室（４）を設
け、
■ 下部露光用マスク（１）に吸着孔（５）を穿設する
、という技術的手段を採用している。■ Align and place the upper and lower exposure masks (1) and (2), and place the wafer (3) on the lower exposure mask (1).
Align and place the upper and lower exposure masks (1) (2).
) In the double-sided exposure mask aligner (^) that performs printing work on both sides of the wafer (3) through the The wafer (3) is attracted to the lower exposure mask (1) through the wafer, and then the upper exposure mask (2) is lowered to approach the wafer (3). After that, the wafer (3) is attracted. After relaxing or releasing the wafer (3) and performing exposure baking, ■ After the exposure baking, the wafer (3) is again attracted to the lower exposure mask (1), and then the upper exposure mask (2) is attached.
In order to realize this technical method, in the second invention, ■ the upper and lower exposure masks (1) and (2) are arranged, and the lower exposure mask (
1) Place the wafer (3) on top and apply the upper and lower exposure masks (
1) In a double-sided exposure mask aligner (^) that performs printing on both sides of a wafer (3) through (2), ■ a vacuum chamber (4) is provided on the underside of the bottom exposure mask (1), and ■ a bottom exposure mask is installed. A technical measure is adopted in which suction holes (5) are formed in the mask (1).
（作 用）
しかして、下部露光用マスク（１）の吸着孔（５）を通
して下部露光用マスク（１）上に載置されたウェハー（
３）を吸着すると、ウェハー（３）はフラットな下部露
光用マスク（１）に密着して反りが矯正され、上部露光
用マスク（２）もウェハー（３）に十分近接させる事が
出来、その結果ウェハー（３）の焼き付け像は上下露光
用マスク（１）（２）遥りに鮮明に焼き付ける事が出来
るものである。又、ウェハー（３）が下部露光用マスク
（１）に吸着されているので、露光作業中に外部振動に
より位置ずれを起こす事もなければ、上部露光用マスク
（２）に吸着して上部露光用マスク（２）と共に上昇し
たり、上部露光用マスク（２）を傷付けたりすることも
ない。(Function) Therefore, the wafer (
3), the wafer (3) comes into close contact with the flat lower exposure mask (1) and the warpage is corrected, and the upper exposure mask (2) can also be brought sufficiently close to the wafer (3), and its As a result, the printed image on the wafer (3) can be printed much more clearly than on the upper and lower exposure masks (1) and (2). In addition, since the wafer (3) is attracted to the lower exposure mask (1), there is no possibility of positional shift due to external vibration during the exposure operation, and the wafer (3) is attracted to the upper exposure mask (2) and the upper exposure The exposure mask (2) will not rise together with the upper exposure mask (2), and the upper exposure mask (2) will not be damaged.
〈実施例）
以下、本発明の第１実施例を第１〜６図に従って詳述す
る。第１図は本発明にかかるマスクアライナ（＾〉の概
略平面図で、中央にアライメント・ステージ（７）が設
けられ、その後方に下部ランプハウス（８）と上部ラン
プハウス（９）とが設けられており、更にアライメント
・ステージ（））の両側にカセッＩ・・ローディング・
ステーション（１０）及びカセット・アンローディング
・ステーション（１１）が設けられている。アライメン
ト・ステージ（７）の前部にはスプリットフィールド顕
微鏡（１２）とウェハー・トランスポート・システム（
１３）が設置され、右手前にはＬＥＤディスプレー（１
４）、キーボード（１５）及びコントローラ（１６）と
が設けられている。<Example> Hereinafter, a first example of the present invention will be described in detail with reference to FIGS. 1 to 6. FIG. 1 is a schematic plan view of a mask aligner (^) according to the present invention, in which an alignment stage (7) is provided in the center, and a lower lamp house (8) and an upper lamp house (9) are provided behind it. In addition, there are cassettes I...loading...on both sides of the alignment stage ()).
A station (10) and a cassette unloading station (11) are provided. At the front of the alignment stage (7) are a split-field microscope (12) and a wafer transport system (
13) is installed, and an LED display (1
4), a keyboard (15) and a controller (16).
アライメント・ステージ（ア）には第２図に示すように
上下に露光用マスク（１）（２）が配置されており、上
部露光用マスク（２）には細密なＩＣパターンと位置合
わせマーク（６）とが形成されており、下部露光用マス
ク（１）には電極など比較的租なパターンと位置合わせ
マーク（６）とが形成されており、任意の位置に（本実
施例では位置合わせマーク（６）の部分）に吸着孔（５
）が穿設されでいる。第３．４図は上下露光用マスク（
１）（２）部分の概略断面図並びに概略平面図である。As shown in Figure 2, on the alignment stage (A), exposure masks (1) and (2) are arranged above and below, and the upper exposure mask (2) has a fine IC pattern and alignment marks ( 6) are formed on the lower exposure mask (1), and a relatively fine pattern such as an electrode and an alignment mark (6) are formed on the lower exposure mask (1). The suction hole (5) is located in the part marked (6).
) is perforated. Figure 3.4 shows the upper and lower exposure masks (
FIG. 1 is a schematic cross-sectional view and a schematic plan view of portions 1 and 2.
ベース（１））の中央には露光用の通孔（１８）が穿設
されており、通孔（１８）の下部には紫外線透過率が９
７〜９８％の石英透光板（１９）が嵌め込んであり、枠
材（２０）にてベース（１７）に固着されており、この
石英透光板（１９）と下部露光用マスク（１）とで挟ま
れた空間が減圧室（４）である。A through hole (18) for exposure is bored in the center of the base (1), and an ultraviolet transmittance of 9 is provided at the bottom of the through hole (18).
A 7-98% quartz transparent plate (19) is fitted and fixed to the base (17) with a frame material (20), and the quartz transparent plate (19) and the lower exposure mask (1 ) is the decompression chamber (4).
ベース（１７）には減圧室（４）に連通ずる排気孔（２
１）が穿設されており、圧力調整弁（２２）を介して排
気ポンプ（２３）に接続されている。ベース（１７）の
上面にはリング状の吸着溝（２４）が刻設されており、
ベース（１））に穿設された吸気孔（２５）が吸着溝（
２４）に連通している。The base (17) has an exhaust hole (2) that communicates with the decompression chamber (4).
1) is bored and connected to an exhaust pump (23) via a pressure regulating valve (22). A ring-shaped suction groove (24) is carved on the top surface of the base (17).
The intake hole (25) drilled in the base (1)) is connected to the suction groove (
24).
しかして、下部露光用マスク（１）をベース（１７）上
に載置し、吸気孔（２５）を通して吸着溝（２４）内を
減圧し、下部露光用マスク（１）の外周部分をベース（
１７）に吸着する。同時に上部露光用マスク（２）を下
部露光用マスク（１）の上方に設置し、上部露光用マス
ク（２）を前後・左右乃至回転移動させ、スプリットフ
ィールド顕微鏡（１２）にて下部露光用マスク（１）側
から観察しつつ上下露光用マスク（１）（２）の位置合
わせを行う０位置合わせが完了するとウェハー（３）の
ローディングを行い、上下露光用マスク＜１）（２）の
間にウェハー（３）を配置する。Then, the lower exposure mask (1) is placed on the base (17), the suction groove (24) is depressurized through the suction hole (25), and the outer peripheral portion of the lower exposure mask (1) is placed on the base (17).
17). At the same time, the upper exposure mask (2) is placed above the lower exposure mask (1), and the upper exposure mask (2) is moved back and forth, left and right, or rotationally, and the lower exposure mask is used with a split field microscope (12). (1) Align the upper and lower exposure masks (1) and (2) while observing from the side. When the 0 alignment is completed, load the wafer (3) and place the upper and lower exposure masks < 1 and (2). Place the wafer (3) on the wafer (3).
前述同様スプリットフィールド顕微鏡（１２）にて観察
しつつウェハー（３）を前後・左右並びに回転移動させ
て下部露光用マスク（１）との位置合わせを行う。＝者
の位置合わせが完了すると静かにウェハー（３）を下部
露光用マスク（１）上に載置する。ウェハー（３）の載
置とほぼ同時に排気孔（２１）を通じて減圧室（４）を
減圧状態にし、吸着孔（５）を通して下゛部露光用マス
ク（１）にウェハー（３）を吸着・矯正させる。然る後
、上部露光用マスク（２）を降下させ、可能な限りウェ
ハー（３）に近接させる０通常は１０〜１５μである。As described above, while observing with a split field microscope (12), the wafer (3) is moved back and forth, left and right, and rotationally to align it with the lower exposure mask (1). When the positioning of the wafer (3) is completed, the wafer (3) is gently placed on the lower exposure mask (1). Almost simultaneously with the placement of the wafer (3), the decompression chamber (4) is brought into a depressurized state through the exhaust hole (21), and the wafer (3) is suctioned and straightened through the suction hole (5) to the lower exposure mask (1). let Thereafter, the upper exposure mask (2) is lowered and brought as close to the wafer (3) as possible, usually 10 to 15 microns.
露光時間は種類により異なり、通例１秒〜１程度度であ
る。露光直前に減圧室（４）内の負圧を弱め、又はほぼ
常圧に戻し、この状態で露光作業を行う、露光作業は窒
素雰囲気内で行なわれる。露光が完了すると露光完了後
、減圧室（４）を再び減圧状態にしてウェハー（３）を
下部露光用マスク（１）に吸着させておいてから上部露
光用マスク（２）を上昇させ、然る後、減圧室（４）を
大気圧に戻してウェハー（３）をフリーにし、アンロー
ディングしてカセットに収納する。The exposure time varies depending on the type and is usually 1 second to about 1 degree. Immediately before exposure, the negative pressure in the reduced pressure chamber (4) is weakened or returned to approximately normal pressure, and the exposure operation is performed in this state.The exposure operation is performed in a nitrogen atmosphere. After the exposure is completed, the reduced pressure chamber (4) is brought into a reduced pressure state again, and the wafer (3) is adsorbed to the lower exposure mask (1), and then the upper exposure mask (2) is raised. After that, the pressure reduction chamber (4) is returned to atmospheric pressure to free the wafer (3), which is then unloaded and stored in a cassette.
尚、露光焼き付け作業は必ずしも両面露光とは限らず、
必要に応じて一方がらの露光でも良い事は言うまでもな
い、この場合、下部露光用マスク（１）を取り替える必
要がない。In addition, exposure printing work is not necessarily double-sided exposure,
It goes without saying that exposure may be performed on one side if necessary; in this case, there is no need to replace the lower exposure mask (1).
又、上下露光用マスク（１）（２）の位置合わせは前述
の場合に限られず、ウェハー（３）を下部露光用マスク
（１）に位置合わせして載置し、続いて上部露光用マス
ク（２）を降下させて位置合わせし、露光するようにし
ても良いものである。Furthermore, the alignment of the upper and lower exposure masks (1) and (2) is not limited to the above-mentioned case; the wafer (3) is aligned and placed on the lower exposure mask (1), and then the upper exposure mask is placed. (2) may be lowered, aligned, and exposed.
又、ベース（１７）の下方に投光器（２６）と受光器（
２７）とを配置し、投光器（２６）から出た光を下部露
光用マスク（１）に反射させ、この反射光の反射状態を
受光器（２７）で検出し、圧力′Ａ整装ｆ （２８）を
介して圧力！ＰＪ整弁（２２）の制御をなし、下部露光
用マスり（１）がフラットになるように調節しながら両
面露光を行うようにしても良い。Also, below the base (17) is a light emitter (26) and a light receiver (
27), the light emitted from the projector (26) is reflected on the lower exposure mask (1), the state of reflection of this reflected light is detected by the receiver (27), and the pressure 'A adjustment f ( 28) Pressure through! The PJ adjustment valve (22) may be controlled to perform double-sided exposure while adjusting the lower exposure mass (1) to be flat.
第２実施例として、第５図に示すように下部露光用マス
ク（１）の下にバックアップ用石英透光板（２９）を設
け、減圧された時に下部露光用マスク（１）がたわまな
いようにし、でも良い、バックアップ用石英透光板（２
９）には多数の通気（３０）が穿設され、パンチングメ
タル状になっている。この場合は投・受光器（２））並
びに圧力調整装ｆｆ （２８）は不要となる。
（効 果）
第１発明は叙上のように、ウェハーを下部露光用マスク
上に載置した後、下部露光用マスクを通してウェハーを
下部露光用マスクに吸着するので、大口径ウェハーが下
部露光用マスクに密着してその反りが矯正され、フラッ
トになる。その結果、上部露光用マスクをウェハーに限
界まで近接させる事が出来るものである。又、上部露光
用マスクを降下させてウェハーに近接させ、然る後ウェ
ハーの吸着を緩和乃至解除して露光焼き付けを行うので
、下部露光用マスクが露光中に反る事がなく、上下露光
用マスク並びにウェハーが完全にフラットな状態で露光
焼き付けされる事になり、焼き付け像に１ぼけ１が発生
する事がない、更に、露光焼き付け後再度ウェハーを下
ＭＣ露光用マスクに吸着した後、上部露光用マスクを上
昇させるので、上部露光用マスクにウェハーが吸着して
共に上昇すると言うような事故が完全に排除出来、上部
露光用ウェハーの損傷を防！トする事が出来るものであ
る。As a second embodiment, as shown in Fig. 5, a backup quartz transparent plate (29) is provided under the lower exposure mask (1) so that the lower exposure mask (1) bends when the pressure is reduced. Make sure that there is no quartz transparent plate (2) for backup.
9) has a large number of ventilation holes (30) perforated therein and has a punched metal shape. In this case, the emitter/receiver (2)) and the pressure regulator ff (28) are not required.
(Effect) As described above, in the first invention, after the wafer is placed on the lower exposure mask, the wafer is adsorbed to the lower exposure mask through the lower exposure mask, so that the large diameter wafer can be used for lower exposure. It adheres closely to the mask, correcting the warpage and making it flat. As a result, the upper exposure mask can be brought as close as possible to the wafer. In addition, the upper exposure mask is lowered to be close to the wafer, and then the wafer adhesion is relaxed or released before exposure and baking is performed, so the lower exposure mask does not warp during exposure, and the upper and lower exposure masks The mask and wafer are exposed and baked in a completely flat state, and no blurring occurs in the printed image.Furthermore, after the exposure and baking, the wafer is adsorbed to the lower MC exposure mask again, and then the upper Since the exposure mask is raised, accidents such as the wafer adhering to the upper exposure mask and rising together can be completely eliminated, preventing damage to the upper exposure wafer! It is something that can be done.
又、第２発明にあっては、下部露光用マスクの下面に減
圧室を設け、下部露光用マスクに吸着孔を穿設しである
ので、減圧室を減圧状態番こすると吸着孔を通じてウェ
ハーが下部露光用マスクに吸着され、その結果大口径ウ
ェハーが下部露光１１１マスクに密着してその反りが矯
正され、フラットになり、上部露光用マスクをウェハー
に限界まで近接させる事が出来るものである。それ故、
上下露光用マスク並びにウェハーが完全にフラットな状
態で露光焼き付けされる事になり、焼き付け像にｒぼけ
１が発生する事がなく、又、上部露光用マスクにウェハ
ーが吸着して共に上昇すると言うような事故も完全に排
除出来、上部露光用ウェハーの損傷を防止する事が出来
るものである。In addition, in the second invention, a vacuum chamber is provided on the lower surface of the mask for lower exposure, and a suction hole is provided in the mask for lower exposure, so that when the vacuum chamber is rubbed in a reduced pressure state, the wafer is removed through the suction hole. The large-diameter wafer is attracted to the lower exposure mask, and as a result, the large-diameter wafer comes into close contact with the lower exposure 111 mask, its warpage is corrected, and it becomes flat, allowing the upper exposure mask to be brought as close as possible to the wafer. Therefore,
The upper and lower exposure masks and the wafer are exposed and printed in a completely flat state, so there is no r-blur 1 in the printed image, and the wafer is attracted to the upper exposure mask and rises together. Such accidents can be completely eliminated and damage to the upper exposure wafer can be prevented.
第１図・・・本発明を適用したマスクアライナの概略平
面図、
第２１？ｔｓ’１（ａ）〜（ｃ）・・・本発明のマスク
アライメント手順を示す概略斜視図、
第３図・・・本発明の露光用マスク部分の概略断面図、
第４図・・・第３図の概略平面図、
第５図・・・本発明のタイムチャート、第６図・・・本
発明の第２実施例の露光用マスク部分の概略断面図。
（＾）・・・マスクアライナ、
（１）・・・下部露光用マスク、
（２）・・・上部露光用マスク、
（３）・・・ウェハー、 （４）・・・減圧室、（
５）・・・吸着孔、 （６）・・・位置合わせマ
ーク、（７）・・・アライメント・ステージ、（８）・
・・下部ランプハウス、
（９）・・・上部ランプハウス、
（１０）・・・ウェハー・ローディング・ステーション
、（１１）・・・ウェハー・アンローディング・ステー
ション、（１２）・・・スプリットフィールド顕微鏡、
（１３）・・・ウェハー・トランスポート・システム、
（１４）・・・ＬＥＤディスプレー、
（１５）・・・キーボード、 （１６）・・・コントロ
ーラ、（１７）・・・ベース、 （１８）・・・通
孔、（１９）・・・石英透光板、 （２０）・・・枠材
、（２１）・・・排気孔、 （２２）・・・圧力調
整弁、（２３）・・・排気ポンプ、 （２４）・・・排
気溝、（２５）・・・吸気孔、 （２６）・・・投
光器、（２７）・・・受光器、 （２８）・・・圧
力！ＩＩＩ整装置、（２９）・・・バックアップ用石英
透光板、（３０）・・・通気孔。
発明者 村井 剛
同 小中 敬具
同 川原 昇Fig. 1...Schematic plan view of a mask aligner to which the present invention is applied, Fig. 21? ts'1(a) to (c)...Schematic perspective view showing the mask alignment procedure of the present invention, Fig. 3...Schematic sectional view of the exposure mask portion of the present invention,
FIG. 4: A schematic plan view of FIG. 3, FIG. 5: A time chart of the present invention, and FIG. 6: A schematic cross-sectional view of the exposure mask portion of the second embodiment of the present invention. (^)...Mask aligner, (1)...Mask for lower exposure, (2)...Mask for upper exposure, (3)...Wafer, (4)...Decompression chamber, (
5)... Suction hole, (6)... Positioning mark, (7)... Alignment stage, (8)...
...Lower lamp house, (9)...Upper lamp house, (10)...Wafer loading station, (11)...Wafer unloading station, (12)...Split field microscope ,
(13)...Wafer transport system,
(14)...LED display, (15)...keyboard, (16)...controller, (17)...base, (18)...through hole, (19)...transparent quartz Light plate, (20)... Frame material, (21)... Exhaust hole, (22)... Pressure regulating valve, (23)... Exhaust pump, (24)... Exhaust groove, ( 25)...Intake hole, (26)...Emitter, (27)...Receiver, (28)...Pressure! III adjustment device, (29)...quartz transparent plate for backup, (30)...ventilation hole. Inventor: Godo Murai Kind regards: Noboru Kawahara
Claims (3)
下部露光用マスク上にウェハーを位置合わせして載置し
、上下露光用マスクを通してウェハーの両面に焼き付け
作業を行う両面露光用マスクアライナにおいて、ウェハ
ーを下部露光用マスク上に載置した後、下部露光用マス
クを通してウェハーを下部露光用マスクに吸着し、続い
て上部露光用マスクを降下させてウェハーに近接させ、
然る後、ウェハーの吸着を緩和乃至解除して露光焼き付
けを行い、露光焼き付け後再度ウェハーを下部露光用マ
スクに吸着した後、上部露光用マスクを上昇させる事を
特徴とする両面露光型マスクアライナのウェハー吸着方
法。(1) Align and place the exposure masks up and down,
In a double-sided exposure mask aligner, the wafer is aligned and placed on the lower exposure mask, and the wafer is printed on both sides through the upper and lower exposure masks. The wafer is adsorbed to the lower exposure mask through the exposure mask, and then the upper exposure mask is lowered to be close to the wafer.
After that, the adsorption of the wafer is relaxed or released, exposure baking is performed, and after the exposure baking, the wafer is again adsorbed to the lower exposure mask, and then the upper exposure mask is raised. wafer adsorption method.
上にウェハーを載置し、上下露光用マスクを通してウェ
ハーの両面に焼き付け作業を行う両面露光用マスクアラ
イナにおいて、下部露光用マスクの下面に減圧室を設け
、下部露光用マスクに吸着孔を穿設して成る事を特徴と
する両頭露光型マスクアライナのウェハー吸着構造。(2) In a double-sided exposure mask aligner, in which exposure masks are arranged above and below, a wafer is placed on the lower exposure mask, and both sides of the wafer are printed through the upper and lower exposure masks, the lower surface of the lower exposure mask is used. A wafer suction structure for a double-headed exposure type mask aligner, characterized in that a decompression chamber is provided in the lower exposure mask, and suction holes are provided in the lower exposure mask.
を穿設した事を特徴とする特許請求の範囲第１項に記載
の両面露光型マスクアライナのウェハー吸着吸着構造。(3) A wafer suction suction structure for a double-sided exposure type mask aligner as set forth in claim 1, wherein suction holes are formed to match alignment marks on the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61246249A JPS63296217A (en) | 1986-10-16 | 1986-10-16 | Suction of wafer at double-sided exposure type mask aligner and its suction structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61246249A JPS63296217A (en) | 1986-10-16 | 1986-10-16 | Suction of wafer at double-sided exposure type mask aligner and its suction structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63296217A true JPS63296217A (en) | 1988-12-02 |
| JPH0533808B2 JPH0533808B2 (en) | 1993-05-20 |
Family
ID=17145718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61246249A Granted JPS63296217A (en) | 1986-10-16 | 1986-10-16 | Suction of wafer at double-sided exposure type mask aligner and its suction structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63296217A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009194147A (en) * | 2008-02-14 | 2009-08-27 | Seiko Instruments Inc | Wafer exposure apparatus and wafer exposure method |
| JP2010182997A (en) * | 2009-02-09 | 2010-08-19 | Seiko Instruments Inc | Wafer exposure device, and wafer exposure method |
-
1986
- 1986-10-16 JP JP61246249A patent/JPS63296217A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009194147A (en) * | 2008-02-14 | 2009-08-27 | Seiko Instruments Inc | Wafer exposure apparatus and wafer exposure method |
| JP2010182997A (en) * | 2009-02-09 | 2010-08-19 | Seiko Instruments Inc | Wafer exposure device, and wafer exposure method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0533808B2 (en) | 1993-05-20 |
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