JPS63285930A - 超微細管の形成方法 - Google Patents

超微細管の形成方法

Info

Publication number
JPS63285930A
JPS63285930A JP62120803A JP12080387A JPS63285930A JP S63285930 A JPS63285930 A JP S63285930A JP 62120803 A JP62120803 A JP 62120803A JP 12080387 A JP12080387 A JP 12080387A JP S63285930 A JPS63285930 A JP S63285930A
Authority
JP
Japan
Prior art keywords
resist layer
substrate
tube
hyperfine
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62120803A
Other languages
English (en)
Other versions
JPH0311084B2 (ja
Inventor
Yoshikazu Tsujino
辻野　嘉一
Yuji Hamada
祐次 浜田
Masakazu Sakata
雅一 坂田
Takanori Fujii
孝則 藤井
Yukinori Kuwano
桑野　幸徳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP62120803A priority Critical patent/JPS63285930A/ja
Priority to KR1019880005659A priority patent/KR920001030B1/ko
Priority to GB8811656A priority patent/GB2207873B/en
Priority to US07/196,170 priority patent/US4874646A/en
Publication of JPS63285930A publication Critical patent/JPS63285930A/ja
Publication of JPH0311084B2 publication Critical patent/JPH0311084B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C49/00—Blow-moulding, i.e. blowing a preform or parison to a desired shape within a mould; Apparatus therefor
    • B29C49/42—Component parts, details or accessories; Auxiliary operations
    • B29C49/58—Blowing means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C67/00—Shaping techniques not covered by groups B29C39/00 - B29C65/00, B29C70/00 or B29C73/00
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C2791/00—Shaping characteristics in general
    • B29C2791/004—Shaping under special conditions
    • B29C2791/009—Using laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C49/00—Blow-moulding, i.e. blowing a preform or parison to a desired shape within a mould; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2023/00—Tubular articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/756—Microarticles, nanoarticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/913—Material designed to be responsive to temperature, light, moisture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
    • Y10T428/1317—Multilayer [continuous layer]
    • Y10T428/1321—Polymer or resin containing [i.e., natural or synthetic]

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （イ）産業上の利用分野 本発明は半導体集積回路素子、超小型の分析装置、セン
サ等に適用可能な超微細管の製造方法に関する。
（ロ）従来の技術 第４図（ａ）〜（Ｃ）は特開１１７１１１５９−５６７
２９号公報に開示さ・れているこの種製造方決を示す。
斯る方法では、まず第４図（−）に示す如く基板（１）
上にポジ型のレジスト層（８）及び該レジスト層より〉
又 感度の低いレジスト層（９）を類２層する。つぎに斯る
レジスト層１８）１９）を２本の平行な線を残して露光
・現像すると、第４図（ｂ）に示す如く感度の高いレジ
スト層（８）の部分は薄く残り、感度の低いレジスト層
（９）の部分は厚く茂るから、脚部（４）と頭部（５）
とからなるレジスト部材（３）が形成される。そして、
現像中のレジスト部材（３）は若干の膨潤のために乾燥
した状態より柔らかくなっており、容易に変形しやすい
ことから、第４図（Ｃ）に示すように、両レジスト部材
（３）の脚部１４）の頭部（５）近傍が反対側のレジス
ト部材（３）側に曲がって互いの頭部＜５１同志が接（
＆） 為され、超微細管ｐ形成される。
（ハ）発明が解決しようとする間匝点 然るに斯る方法では露光・現１象という複雑な工程が必
要であった。
に）間粗点を解決するための手段 本発明は斯る点に鑑みてなされたもので、その構成的特
徴は、基板上に高分子材料からなるレジスト層を設け、
該レジスト層が溶融する条件で所るレジスト層にレーザ
光を照射することにある。
（ホ）作　用 高分子材料を溶融させると基板とレジスト層との間にガ
スが発生する。
（へ）実施例 第１図（−）（ｂ）は本発明の実施例を示す工程別図で
ある。
まず、第１図（−）に示す如くシリコン等からなる基板
（１υ上にポリメチルメタクリル酸（ＰＭＭＡ）からな
るレジストを２μｍの厚さに塗着してレジスト層Ｕを設
ける。次いで出力３．ＯＷ、ｌｌ長１．０６μｍのＹＡ
Ｇレーザ（至）を用いて上記レジスト層ａ２ｔ一部分的
に溶融させる。具体的には上記基板（１５を上記ＹＡＧ
レーザの焦点から４■離間して配すると共に基板Ｉとレ
ーザとを紙面垂直方向に相対的［８０■／ｓｅｃの速度
で移動させることにより行なえる。また斯る溶融に伴な
ってレジスト層＠からは分解ガスが同時に発生するので
、基板Ｉとレジスト層＠との間で発生したガスの圧力で
溶融したレジスト層＠が押し上げられて、第１図（ｂ）
Ｋ示、す如くレーザ照射部分に超微細管Ｉが形成される
。
また、第２図に示す如く上記超微細管（１４）をレジス
ト層ｌより分離する必要がある際には上記微細管（１４
１に沿ってその両側のレジスト層（２）を出力３．５Ｗ
％波長１．０６μｍのＹＡＧレーザを用いて溶融除去し
て、レジストのない溝■を形成すれば良い。
具体的には上記基板１１１Ｊを上記ＹＡＧレーザの焦点
′から６瓢離間配置すると共に、基板（ｌｉとレーザと
を紙面垂直方向と相対的に２０■／ｓｅｃの速度で移動
させることにより行なえる。
更に、第６図に示す如く蒸着等の方法により超微細管−
を金属薄膜ｕｅで被覆すれば、より堅牢な超微細管とな
る。
（ト）発明の効果 本発明によれば、レーザ光を照射するだけで超微細管が
形成できるので、従来方決に較べてその形成が容易とな
る。
【図面の簡単な説明】
第１図乃至第６図は本発明の実施例を示す断面図、第４
図（−）〜（Ｃ）は従来例を示す工程別断面図である。 αυ・・・基板、■・・・レジスト層、αＪ・・・ＹＡ
Ｇレーザ。

Claims (1)

    【特許請求の範囲】
  1. （１）基板上に高分子材料からなるレジスト層を設け、
    該レジスト層が溶融する条件で斯るレジスト層にレーザ
    光を照射することを特徴とする超微細管の形成方法。
JP62120803A 1987-05-18 1987-05-18 超微細管の形成方法 Granted JPS63285930A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62120803A JPS63285930A (ja) 1987-05-18 1987-05-18 超微細管の形成方法
KR1019880005659A KR920001030B1 (ko) 1987-05-18 1988-05-16 초미세관의 형성방법
GB8811656A GB2207873B (en) 1987-05-18 1988-05-17 Ultrafine tube and method for its production.
US07/196,170 US4874646A (en) 1987-05-18 1988-05-17 Ultrafine tube and method for its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62120803A JPS63285930A (ja) 1987-05-18 1987-05-18 超微細管の形成方法

Publications (2)

Publication Number Publication Date
JPS63285930A true JPS63285930A (ja) 1988-11-22
JPH0311084B2 JPH0311084B2 (ja) 1991-02-15

Family

ID=14795372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62120803A Granted JPS63285930A (ja) 1987-05-18 1987-05-18 超微細管の形成方法

Country Status (4)

Country Link
US (1) US4874646A (ja)
JP (1) JPS63285930A (ja)
KR (1) KR920001030B1 (ja)
GB (1) GB2207873B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007007842A (ja) * 2005-03-29 2007-01-18 Commissariat A L'energie Atomique 埋込みマイクロ流路を作製する方法、及び当該マイクロ流路を含むマイクロ素子

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172473A (en) * 1990-05-07 1992-12-22 International Business Machines Corporation Method of making cone electrical contact
DE4330564B4 (de) * 1993-09-09 2005-03-17 Merck Patent Gmbh Codierter Träger für die Dünnschichtchromatographie
US5900351A (en) * 1995-01-17 1999-05-04 International Business Machines Corporation Method for stripping photoresist
US20120000566A1 (en) * 2010-07-01 2012-01-05 Millipore Corporation Rigid disposable flow path
WO2019014240A1 (en) * 2017-07-10 2019-01-17 President And Fellows Of Harvard College RADIATION COOLING DEVICES AND METHODS OF FORMING THE SAME

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539572A (en) * 1981-02-13 1985-09-03 Minnesota Mining And Manufacturing Company Optical recording medium
US4408213A (en) * 1981-10-30 1983-10-04 Rca Corporation Reinforced bubble recording medium and information record
US4527173A (en) * 1984-04-16 1985-07-02 Eastman Kodak Company Erasable, reusable optical recording element and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007007842A (ja) * 2005-03-29 2007-01-18 Commissariat A L'energie Atomique 埋込みマイクロ流路を作製する方法、及び当該マイクロ流路を含むマイクロ素子

Also Published As

Publication number Publication date
GB8811656D0 (en) 1988-06-22
JPH0311084B2 (ja) 1991-02-15
GB2207873A (en) 1989-02-15
US4874646A (en) 1989-10-17
KR880014648A (ko) 1988-12-24
KR920001030B1 (ko) 1992-02-01
GB2207873B (en) 1991-04-17

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