JPS6328308B2 - - Google Patents
Info
- Publication number
- JPS6328308B2 JPS6328308B2 JP54141869A JP14186979A JPS6328308B2 JP S6328308 B2 JPS6328308 B2 JP S6328308B2 JP 54141869 A JP54141869 A JP 54141869A JP 14186979 A JP14186979 A JP 14186979A JP S6328308 B2 JPS6328308 B2 JP S6328308B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- film transistor
- display
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000003990 capacitor Substances 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 238000005513 bias potential Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 T 21 Chemical compound 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003098 cholesteric effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14186979A JPS5665176A (en) | 1979-10-31 | 1979-10-31 | Display device |
| US06/182,089 US4431271A (en) | 1979-09-06 | 1980-08-28 | Display device with a thin film transistor and storage condenser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14186979A JPS5665176A (en) | 1979-10-31 | 1979-10-31 | Display device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1109527A Division JPH0225A (ja) | 1989-04-28 | 1989-04-28 | 駆動装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5665176A JPS5665176A (en) | 1981-06-02 |
| JPS6328308B2 true JPS6328308B2 (fr) | 1988-06-08 |
Family
ID=15302047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14186979A Granted JPS5665176A (en) | 1979-09-06 | 1979-10-31 | Display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5665176A (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58125087A (ja) * | 1982-01-21 | 1983-07-25 | 社団法人日本電子工業振興協会 | マトリツクス型液晶表示装置 |
| JPS5991756U (ja) * | 1982-12-13 | 1984-06-21 | 三洋電機株式会社 | 液晶マトリクスパネル |
| JPS59119379A (ja) * | 1982-12-27 | 1984-07-10 | 株式会社東芝 | 薄型表示装置 |
| JPS60213062A (ja) * | 1984-04-09 | 1985-10-25 | Hosiden Electronics Co Ltd | 薄膜トランジスタの製造方法 |
| JPH0697317B2 (ja) * | 1984-04-11 | 1994-11-30 | ホシデン株式会社 | 液晶表示器 |
| JPS6311989A (ja) * | 1987-04-03 | 1988-01-19 | セイコーエプソン株式会社 | 電気光学的表示装置 |
| JPS63173251U (fr) * | 1987-04-30 | 1988-11-10 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5583025A (en) * | 1978-12-19 | 1980-06-23 | Matsushita Electric Ind Co Ltd | Production of image display panel |
-
1979
- 1979-10-31 JP JP14186979A patent/JPS5665176A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5583025A (en) * | 1978-12-19 | 1980-06-23 | Matsushita Electric Ind Co Ltd | Production of image display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5665176A (en) | 1981-06-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4431271A (en) | Display device with a thin film transistor and storage condenser | |
| US5056895A (en) | Active matrix liquid crystal liquid crystal light valve including a dielectric mirror upon a leveling layer and having fringing fields | |
| US6859247B2 (en) | Electro-optical apparatus and projection-type display apparatus | |
| EP1174757B1 (fr) | Dispositif d'affichage réflectif à cristaux liquides | |
| KR100741890B1 (ko) | 횡전계 방식의 액정표시장치 및 그의 제조방법 | |
| JPS6045219A (ja) | アクテイブマトリクス型表示装置 | |
| JPS6280626A (ja) | 液晶表示素子 | |
| JPH01156725A (ja) | 表示装置 | |
| JP2000035591A (ja) | アクティブマトリクス素子、及びアクティブマトリクス素子を用いた発光素子、光変調素子、光検出素子、露光素子、表示装置 | |
| JPS6265017A (ja) | 冗長な導体構造を持つ薄膜ｆｅｔ駆動形液晶表示装置 | |
| JPH0715536B2 (ja) | 表示パネル | |
| US6611311B1 (en) | Active-matrix display screen | |
| JP4099324B2 (ja) | 液晶表示装置 | |
| JPH031648B2 (fr) | ||
| JPS6328308B2 (fr) | ||
| KR20040055688A (ko) | 전기 광학 기판의 제조 방법, 전기 광학 장치의 제조방법, 전기 광학 장치 | |
| JPH0225A (ja) | 駆動装置 | |
| JPH02149823A (ja) | 液晶表示装置 | |
| JPH02230126A (ja) | 反射型液晶表示デバイス | |
| JPS6261154B2 (fr) | ||
| JPS6068326A (ja) | 薄膜トランジスタ基板 | |
| JPS6037590A (ja) | 液晶カラ−表示装置 | |
| KR100476038B1 (ko) | 액정표시소자및그제조방법 | |
| JP2002196346A (ja) | 電気光学装置及びその製造方法、並びに投射型表示装置 | |
| JPH0274929A (ja) | アクティブマトリクス基板 |