JPS63283062A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS63283062A JPS63283062A JP63057379A JP5737988A JPS63283062A JP S63283062 A JPS63283062 A JP S63283062A JP 63057379 A JP63057379 A JP 63057379A JP 5737988 A JP5737988 A JP 5737988A JP S63283062 A JPS63283062 A JP S63283062A
- Authority
- JP
- Japan
- Prior art keywords
- impurity density
- region
- base
- high impurity
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000012535 impurity Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63057379A JPS63283062A (ja) | 1988-03-12 | 1988-03-12 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63057379A JPS63283062A (ja) | 1988-03-12 | 1988-03-12 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56089818A Division JPS5743475A (en) | 1981-06-11 | 1981-06-11 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63283062A true JPS63283062A (ja) | 1988-11-18 |
| JPH0347733B2 JPH0347733B2 (enrdf_load_stackoverflow) | 1991-07-22 |
Family
ID=13053966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63057379A Granted JPS63283062A (ja) | 1988-03-12 | 1988-03-12 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63283062A (enrdf_load_stackoverflow) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4943583A (enrdf_load_stackoverflow) * | 1972-08-30 | 1974-04-24 | ||
| JPS5020675A (enrdf_load_stackoverflow) * | 1973-06-22 | 1975-03-05 | ||
| JPS5026480A (enrdf_load_stackoverflow) * | 1973-07-09 | 1975-03-19 | ||
| JPS5222885A (en) * | 1975-08-14 | 1977-02-21 | Matsushita Electronics Corp | Transistor and manufacturing system |
-
1988
- 1988-03-12 JP JP63057379A patent/JPS63283062A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4943583A (enrdf_load_stackoverflow) * | 1972-08-30 | 1974-04-24 | ||
| JPS5020675A (enrdf_load_stackoverflow) * | 1973-06-22 | 1975-03-05 | ||
| JPS5026480A (enrdf_load_stackoverflow) * | 1973-07-09 | 1975-03-19 | ||
| JPS5222885A (en) * | 1975-08-14 | 1977-02-21 | Matsushita Electronics Corp | Transistor and manufacturing system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0347733B2 (enrdf_load_stackoverflow) | 1991-07-22 |
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