JPS6327865B2 - - Google Patents
Info
- Publication number
- JPS6327865B2 JPS6327865B2 JP55022937A JP2293780A JPS6327865B2 JP S6327865 B2 JPS6327865 B2 JP S6327865B2 JP 55022937 A JP55022937 A JP 55022937A JP 2293780 A JP2293780 A JP 2293780A JP S6327865 B2 JPS6327865 B2 JP S6327865B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- type
- main electrode
- electrode region
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 18
- 238000000926 separation method Methods 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2293780A JPS56120169A (en) | 1980-02-25 | 1980-02-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2293780A JPS56120169A (en) | 1980-02-25 | 1980-02-25 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56120169A JPS56120169A (en) | 1981-09-21 |
JPS6327865B2 true JPS6327865B2 (de) | 1988-06-06 |
Family
ID=12096540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2293780A Granted JPS56120169A (en) | 1980-02-25 | 1980-02-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56120169A (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63191754A (ja) * | 1987-01-21 | 1988-08-09 | 日本テクトロン株式会社 | 試薬収納容器 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0673649A (ja) * | 1991-12-26 | 1994-03-15 | Goosen:Kk | 組紐状糸条物 |
JP4860146B2 (ja) * | 2004-12-24 | 2012-01-25 | パナソニック株式会社 | サージ保護用半導体装置 |
JP2014165317A (ja) * | 2013-02-25 | 2014-09-08 | Toshiba Corp | 半導体装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50108885A (de) * | 1974-01-31 | 1975-08-27 |
-
1980
- 1980-02-25 JP JP2293780A patent/JPS56120169A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50108885A (de) * | 1974-01-31 | 1975-08-27 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63191754A (ja) * | 1987-01-21 | 1988-08-09 | 日本テクトロン株式会社 | 試薬収納容器 |
Also Published As
Publication number | Publication date |
---|---|
JPS56120169A (en) | 1981-09-21 |
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