JPS621261B2 - - Google Patents
Info
- Publication number
- JPS621261B2 JPS621261B2 JP7437979A JP7437979A JPS621261B2 JP S621261 B2 JPS621261 B2 JP S621261B2 JP 7437979 A JP7437979 A JP 7437979A JP 7437979 A JP7437979 A JP 7437979A JP S621261 B2 JPS621261 B2 JP S621261B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- type
- base
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005215 recombination Methods 0.000 claims description 8
- 230000006798 recombination Effects 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 5
- 230000035515 penetration Effects 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7437979A JPS55166957A (en) | 1979-06-13 | 1979-06-13 | Planar type thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7437979A JPS55166957A (en) | 1979-06-13 | 1979-06-13 | Planar type thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55166957A JPS55166957A (en) | 1980-12-26 |
| JPS621261B2 true JPS621261B2 (de) | 1987-01-12 |
Family
ID=13545467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7437979A Granted JPS55166957A (en) | 1979-06-13 | 1979-06-13 | Planar type thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55166957A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6104045A (en) * | 1998-05-13 | 2000-08-15 | Micron Technology, Inc. | High density planar SRAM cell using bipolar latch-up and gated diode breakdown |
| CN102096037B (zh) * | 2010-12-16 | 2013-01-30 | 许继集团有限公司 | 一种晶闸管高压处理板的测试系统与方法 |
| FR2991504A1 (fr) | 2012-05-30 | 2013-12-06 | St Microelectronics Tours Sas | Composant de puissance vertical haute tension |
-
1979
- 1979-06-13 JP JP7437979A patent/JPS55166957A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55166957A (en) | 1980-12-26 |
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