JPS55166957A - Planar type thyristor - Google Patents
Planar type thyristorInfo
- Publication number
- JPS55166957A JPS55166957A JP7437979A JP7437979A JPS55166957A JP S55166957 A JPS55166957 A JP S55166957A JP 7437979 A JP7437979 A JP 7437979A JP 7437979 A JP7437979 A JP 7437979A JP S55166957 A JPS55166957 A JP S55166957A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- base
- thyristor
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003071 parasitic effect Effects 0.000 abstract 3
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7437979A JPS55166957A (en) | 1979-06-13 | 1979-06-13 | Planar type thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7437979A JPS55166957A (en) | 1979-06-13 | 1979-06-13 | Planar type thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55166957A true JPS55166957A (en) | 1980-12-26 |
JPS621261B2 JPS621261B2 (ja) | 1987-01-12 |
Family
ID=13545467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7437979A Granted JPS55166957A (en) | 1979-06-13 | 1979-06-13 | Planar type thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55166957A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6773968B1 (en) * | 1998-05-13 | 2004-08-10 | Micron Technology, Inc. | High density planar SRAM cell using bipolar latch-up and gated diode breakdown |
CN102096037A (zh) * | 2010-12-16 | 2011-06-15 | 许继集团有限公司 | 一种晶闸管高压处理板的测试系统与方法 |
FR2991504A1 (fr) * | 2012-05-30 | 2013-12-06 | St Microelectronics Tours Sas | Composant de puissance vertical haute tension |
-
1979
- 1979-06-13 JP JP7437979A patent/JPS55166957A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6773968B1 (en) * | 1998-05-13 | 2004-08-10 | Micron Technology, Inc. | High density planar SRAM cell using bipolar latch-up and gated diode breakdown |
CN102096037A (zh) * | 2010-12-16 | 2011-06-15 | 许继集团有限公司 | 一种晶闸管高压处理板的测试系统与方法 |
FR2991504A1 (fr) * | 2012-05-30 | 2013-12-06 | St Microelectronics Tours Sas | Composant de puissance vertical haute tension |
US8994065B2 (en) | 2012-05-30 | 2015-03-31 | Stmicroelectronics (Tours) Sas | High-voltage vertical power component |
Also Published As
Publication number | Publication date |
---|---|
JPS621261B2 (ja) | 1987-01-12 |
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