JPS55166957A - Planar type thyristor - Google Patents

Planar type thyristor

Info

Publication number
JPS55166957A
JPS55166957A JP7437979A JP7437979A JPS55166957A JP S55166957 A JPS55166957 A JP S55166957A JP 7437979 A JP7437979 A JP 7437979A JP 7437979 A JP7437979 A JP 7437979A JP S55166957 A JPS55166957 A JP S55166957A
Authority
JP
Japan
Prior art keywords
layer
type
base
thyristor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7437979A
Other languages
English (en)
Other versions
JPS621261B2 (ja
Inventor
Teruo Kusaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7437979A priority Critical patent/JPS55166957A/ja
Publication of JPS55166957A publication Critical patent/JPS55166957A/ja
Publication of JPS621261B2 publication Critical patent/JPS621261B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP7437979A 1979-06-13 1979-06-13 Planar type thyristor Granted JPS55166957A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7437979A JPS55166957A (en) 1979-06-13 1979-06-13 Planar type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7437979A JPS55166957A (en) 1979-06-13 1979-06-13 Planar type thyristor

Publications (2)

Publication Number Publication Date
JPS55166957A true JPS55166957A (en) 1980-12-26
JPS621261B2 JPS621261B2 (ja) 1987-01-12

Family

ID=13545467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7437979A Granted JPS55166957A (en) 1979-06-13 1979-06-13 Planar type thyristor

Country Status (1)

Country Link
JP (1) JPS55166957A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6773968B1 (en) * 1998-05-13 2004-08-10 Micron Technology, Inc. High density planar SRAM cell using bipolar latch-up and gated diode breakdown
CN102096037A (zh) * 2010-12-16 2011-06-15 许继集团有限公司 一种晶闸管高压处理板的测试系统与方法
FR2991504A1 (fr) * 2012-05-30 2013-12-06 St Microelectronics Tours Sas Composant de puissance vertical haute tension

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6773968B1 (en) * 1998-05-13 2004-08-10 Micron Technology, Inc. High density planar SRAM cell using bipolar latch-up and gated diode breakdown
CN102096037A (zh) * 2010-12-16 2011-06-15 许继集团有限公司 一种晶闸管高压处理板的测试系统与方法
FR2991504A1 (fr) * 2012-05-30 2013-12-06 St Microelectronics Tours Sas Composant de puissance vertical haute tension
US8994065B2 (en) 2012-05-30 2015-03-31 Stmicroelectronics (Tours) Sas High-voltage vertical power component

Also Published As

Publication number Publication date
JPS621261B2 (ja) 1987-01-12

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