JPS63278332A - X線露光用マスクの製造方法 - Google Patents

X線露光用マスクの製造方法

Info

Publication number
JPS63278332A
JPS63278332A JP62115427A JP11542787A JPS63278332A JP S63278332 A JPS63278332 A JP S63278332A JP 62115427 A JP62115427 A JP 62115427A JP 11542787 A JP11542787 A JP 11542787A JP S63278332 A JPS63278332 A JP S63278332A
Authority
JP
Japan
Prior art keywords
membrane
substrate
reactive ion
ray exposure
exposure mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62115427A
Other languages
English (en)
Japanese (ja)
Other versions
JPH054806B2 (enrdf_load_stackoverflow
Inventor
Masafumi Nakaishi
中石 雅文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62115427A priority Critical patent/JPS63278332A/ja
Publication of JPS63278332A publication Critical patent/JPS63278332A/ja
Publication of JPH054806B2 publication Critical patent/JPH054806B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP62115427A 1987-05-11 1987-05-11 X線露光用マスクの製造方法 Granted JPS63278332A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62115427A JPS63278332A (ja) 1987-05-11 1987-05-11 X線露光用マスクの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62115427A JPS63278332A (ja) 1987-05-11 1987-05-11 X線露光用マスクの製造方法

Publications (2)

Publication Number Publication Date
JPS63278332A true JPS63278332A (ja) 1988-11-16
JPH054806B2 JPH054806B2 (enrdf_load_stackoverflow) 1993-01-20

Family

ID=14662300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62115427A Granted JPS63278332A (ja) 1987-05-11 1987-05-11 X線露光用マスクの製造方法

Country Status (1)

Country Link
JP (1) JPS63278332A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014212266A (ja) * 2013-04-19 2014-11-13 大日本印刷株式会社 インプリントモールドの製造方法および基材
JP2017098583A (ja) * 2017-02-07 2017-06-01 大日本印刷株式会社 インプリントモールド

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014212266A (ja) * 2013-04-19 2014-11-13 大日本印刷株式会社 インプリントモールドの製造方法および基材
JP2017098583A (ja) * 2017-02-07 2017-06-01 大日本印刷株式会社 インプリントモールド

Also Published As

Publication number Publication date
JPH054806B2 (enrdf_load_stackoverflow) 1993-01-20

Similar Documents

Publication Publication Date Title
US4783238A (en) Planarized insulation isolation
JPH02266517A (ja) 半導体装置の製造方法
JPS63278332A (ja) X線露光用マスクの製造方法
JP2576257B2 (ja) 半導体圧力センサの製造方法
JP3349001B2 (ja) 金属膜の形成方法
JPS62279633A (ja) パタ−ン形成方法
JPS61184831A (ja) 半導体装置の製造方法
JPH04116954A (ja) 半導体装置の製造方法
JPS6028237A (ja) 半導体装置の製造方法
JPS6348827A (ja) 反応性イオンエツチング方法
JPH0546096B2 (enrdf_load_stackoverflow)
JPS5856422A (ja) パタ−ン形成法
JPH0745586A (ja) パタ―ン化有機物薄膜形成法
JP2912002B2 (ja) 半導体装置の製造方法
JPS63140530A (ja) X線マスク
JPS61123144A (ja) 微細加工方法
JPS63226930A (ja) 半導体装置の製造方法
JPH01304457A (ja) パターン形成方法
JPS63104327A (ja) X線マスク、およびその製造方法
JPH0484430A (ja) 半導体装置の製造方法
JPH04302425A (ja) 半導体装置の製造方法
JPS5892224A (ja) パタ−ン形成方法
JPS60254731A (ja) 半導体装置の製造方法
JPS63312645A (ja) 半導体装置の製造方法
JPS62229835A (ja) X線露光用マスクの製法