JPS63277596A - 炭化珪素単結晶の成長方法 - Google Patents
炭化珪素単結晶の成長方法Info
- Publication number
- JPS63277596A JPS63277596A JP11315387A JP11315387A JPS63277596A JP S63277596 A JPS63277596 A JP S63277596A JP 11315387 A JP11315387 A JP 11315387A JP 11315387 A JP11315387 A JP 11315387A JP S63277596 A JPS63277596 A JP S63277596A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon carbide
- growth
- crystal
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 69
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 20
- 239000007789 gas Substances 0.000 abstract description 10
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 abstract description 9
- 239000001294 propane Substances 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- 238000003763 carbonization Methods 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11315387A JPS63277596A (ja) | 1987-05-07 | 1987-05-07 | 炭化珪素単結晶の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11315387A JPS63277596A (ja) | 1987-05-07 | 1987-05-07 | 炭化珪素単結晶の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63277596A true JPS63277596A (ja) | 1988-11-15 |
| JPH0443879B2 JPH0443879B2 (fr) | 1992-07-17 |
Family
ID=14604910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11315387A Granted JPS63277596A (ja) | 1987-05-07 | 1987-05-07 | 炭化珪素単結晶の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63277596A (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2854641A1 (fr) * | 2003-05-05 | 2004-11-12 | Centre Nat Rech Scient | Procede de formation d'une couche de carbure de silicium sur une tranche de silicium |
| WO2011155234A1 (fr) * | 2010-06-09 | 2011-12-15 | 住友電気工業株式会社 | Substrat de carbure de silicium, substrat doté d'une couche épitaxiale qui lui est attachée, dispositif à semi-conducteurs, et procédé de production de substrat de carbure de silicium |
| CN102869816A (zh) * | 2011-03-22 | 2013-01-09 | 住友电气工业株式会社 | 碳化硅衬底 |
| CN105442038A (zh) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | 一种坩埚旋转式碳化硅单晶生长方法 |
-
1987
- 1987-05-07 JP JP11315387A patent/JPS63277596A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2854641A1 (fr) * | 2003-05-05 | 2004-11-12 | Centre Nat Rech Scient | Procede de formation d'une couche de carbure de silicium sur une tranche de silicium |
| WO2004099471A3 (fr) * | 2003-05-05 | 2005-01-20 | Centre Nat Recherche | Procede de formation d’une couche de carbure de silicium sur une tranche de silicium |
| US7416606B2 (en) | 2003-05-05 | 2008-08-26 | Centre National De La Recherche Scientifique | Method of forming a layer of silicon carbide on a silicon wafer |
| WO2011155234A1 (fr) * | 2010-06-09 | 2011-12-15 | 住友電気工業株式会社 | Substrat de carbure de silicium, substrat doté d'une couche épitaxiale qui lui est attachée, dispositif à semi-conducteurs, et procédé de production de substrat de carbure de silicium |
| CN102473604A (zh) * | 2010-06-09 | 2012-05-23 | 住友电气工业株式会社 | 碳化硅衬底、设置有外延层的衬底、半导体器件和用于制造碳化硅衬底的方法 |
| CN102869816A (zh) * | 2011-03-22 | 2013-01-09 | 住友电气工业株式会社 | 碳化硅衬底 |
| CN105442038A (zh) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | 一种坩埚旋转式碳化硅单晶生长方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0443879B2 (fr) | 1992-07-17 |
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