JPS63277596A - 炭化珪素単結晶の成長方法 - Google Patents

炭化珪素単結晶の成長方法

Info

Publication number
JPS63277596A
JPS63277596A JP11315387A JP11315387A JPS63277596A JP S63277596 A JPS63277596 A JP S63277596A JP 11315387 A JP11315387 A JP 11315387A JP 11315387 A JP11315387 A JP 11315387A JP S63277596 A JPS63277596 A JP S63277596A
Authority
JP
Japan
Prior art keywords
single crystal
silicon carbide
growth
crystal
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11315387A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0443879B2 (enrdf_load_stackoverflow
Inventor
Masaki Furukawa
勝紀 古川
Akira Suzuki
彰 鈴木
Mitsuhiro Shigeta
光浩 繁田
Yoshihisa Fujii
藤井　良久
Atsuko Uemoto
植本　敦子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP11315387A priority Critical patent/JPS63277596A/ja
Publication of JPS63277596A publication Critical patent/JPS63277596A/ja
Publication of JPH0443879B2 publication Critical patent/JPH0443879B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP11315387A 1987-05-07 1987-05-07 炭化珪素単結晶の成長方法 Granted JPS63277596A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11315387A JPS63277596A (ja) 1987-05-07 1987-05-07 炭化珪素単結晶の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11315387A JPS63277596A (ja) 1987-05-07 1987-05-07 炭化珪素単結晶の成長方法

Publications (2)

Publication Number Publication Date
JPS63277596A true JPS63277596A (ja) 1988-11-15
JPH0443879B2 JPH0443879B2 (enrdf_load_stackoverflow) 1992-07-17

Family

ID=14604910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11315387A Granted JPS63277596A (ja) 1987-05-07 1987-05-07 炭化珪素単結晶の成長方法

Country Status (1)

Country Link
JP (1) JPS63277596A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2854641A1 (fr) * 2003-05-05 2004-11-12 Centre Nat Rech Scient Procede de formation d'une couche de carbure de silicium sur une tranche de silicium
WO2011155234A1 (ja) * 2010-06-09 2011-12-15 住友電気工業株式会社 炭化珪素基板、エピタキシャル層付き基板、半導体装置および炭化珪素基板の製造方法
CN102869816A (zh) * 2011-03-22 2013-01-09 住友电气工业株式会社 碳化硅衬底
CN105442038A (zh) * 2015-12-17 2016-03-30 中国电子科技集团公司第二研究所 一种坩埚旋转式碳化硅单晶生长方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2854641A1 (fr) * 2003-05-05 2004-11-12 Centre Nat Rech Scient Procede de formation d'une couche de carbure de silicium sur une tranche de silicium
WO2004099471A3 (fr) * 2003-05-05 2005-01-20 Centre Nat Recherche Procede de formation d’une couche de carbure de silicium sur une tranche de silicium
US7416606B2 (en) 2003-05-05 2008-08-26 Centre National De La Recherche Scientifique Method of forming a layer of silicon carbide on a silicon wafer
WO2011155234A1 (ja) * 2010-06-09 2011-12-15 住友電気工業株式会社 炭化珪素基板、エピタキシャル層付き基板、半導体装置および炭化珪素基板の製造方法
CN102473604A (zh) * 2010-06-09 2012-05-23 住友电气工业株式会社 碳化硅衬底、设置有外延层的衬底、半导体器件和用于制造碳化硅衬底的方法
CN102869816A (zh) * 2011-03-22 2013-01-09 住友电气工业株式会社 碳化硅衬底
CN105442038A (zh) * 2015-12-17 2016-03-30 中国电子科技集团公司第二研究所 一种坩埚旋转式碳化硅单晶生长方法

Also Published As

Publication number Publication date
JPH0443879B2 (enrdf_load_stackoverflow) 1992-07-17

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