JPS63271940A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS63271940A JPS63271940A JP10739987A JP10739987A JPS63271940A JP S63271940 A JPS63271940 A JP S63271940A JP 10739987 A JP10739987 A JP 10739987A JP 10739987 A JP10739987 A JP 10739987A JP S63271940 A JPS63271940 A JP S63271940A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- lead frame
- oxide film
- films
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000002161 passivation Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 24
- 239000008188 pellet Substances 0.000 abstract description 8
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 230000000873 masking effect Effects 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特に樹脂封止型の半導体装
置の製法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a method for manufacturing a resin-sealed semiconductor device.
従来、この種の樹脂封止型半導体装置は、リードフレー
ムにペレットを固定しボンディングを行い、樹脂封止を
行っていた（第２図）。Conventionally, this type of resin-sealed semiconductor device has been resin-sealed by fixing a pellet to a lead frame and performing bonding (FIG. 2).
上述した従来の製法では、ペレットのポンディングパッ
ド部にはパッシベーション膜は存在せず、ボンディング
線を除くポンディングパッド部は配線金属が露出した構
造となる。この事は、樹脂封止型の半導体装置の信頼度
上の不良の多くがポンディングパッド部の配線金属露出
部分から腐食であるという事実から大きな欠点であると
言える。In the conventional manufacturing method described above, there is no passivation film in the bonding pad portion of the pellet, and the bonding pad portion except the bonding line has a structure in which the wiring metal is exposed. This can be said to be a major drawback in view of the fact that most of the defects in the reliability of resin-sealed semiconductor devices are caused by corrosion from the exposed wiring metal portion of the bonding pad portion.
本発明の製法は、ペレットをリードフレームに固定しボ
ンディングを行った後に、パッジページ四ン性を有する
薄膜を形成する工程を有している。The manufacturing method of the present invention includes a step of fixing the pellet to a lead frame and performing bonding, and then forming a thin film having pad-page properties.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の縦断面図である。FIG. 1 is a longitudinal sectional view of one embodiment of the present invention.
ペレットをリードフレームに固定しボンディングした状
態が第１図−（ａｌである。この状態でリードフレーム
ごとパッシベーション性の高い窒化珪素膜、酸化珪素膜
、酸化タンタル膜、酸化アルミ膜等をスパッタリングに
よシ成膜する（第１図−（ｂ））。The state in which the pellet is fixed and bonded to the lead frame is shown in Figure 1-(al).In this state, a silicon nitride film, silicon oxide film, tantalum oxide film, aluminum oxide film, etc. with high passivation properties are coated with the lead frame by sputtering. A film is formed (Fig. 1-(b)).
この際少なくともアウターリードとなるべき部分はマス
キングを施し、パッシベーション膜が堆積しないように
工夫する。この後従来と同様に樹脂封止を行う（第１図
−（Ｃ））。At this time, at least the portion that is to become the outer lead is masked to prevent a passivation film from being deposited. Thereafter, resin sealing is performed as in the conventional method (FIG. 1-(C)).
〔実施例２〕
本発明の第２の実施例として、ペレットをリードフレー
ムに固定しボンディングした後のパッシベーション膜の
成膜方法としてプラズマ気相成長を用い、窒化珪素膜、
酸化珪素膜等を堆積する。[Example 2] As a second example of the present invention, a silicon nitride film,
Deposit a silicon oxide film or the like.
本実施例の断面図は前記実施例の第１図と同じになる。The sectional view of this embodiment is the same as FIG. 1 of the previous embodiment.
パッシベーション膜としては窒化珪素膜。The passivation film is silicon nitride film.
酸化珪素膜等が好１しく、前記実施例では必然的に反応
性スパッタリングとな＃）膜質としては好ましいがスパ
ッタリングレイトは低い。この実施例ではプラズマ気相
成長を用いる為、堆積レイトが高くコスト的に低くでき
るという利点がある。A silicon oxide film or the like is preferable, and in the above embodiments, reactive sputtering is necessarily used.Although the film quality is preferable, the sputtering rate is low. In this embodiment, since plasma vapor phase epitaxy is used, there is an advantage that the deposition rate is high and the cost can be reduced.
〔発明の効果〕
以上説明したように本発明は、ペレットをリードフレー
ムに固定しボンディングを行った後パッシベーション膜
を成膜する事により、ポンディングパッド部の配線金属
露出部をパッシベーション膜で覆う事ができるので（第
１図−（ｂ））、これに伴い耐食性が向上し、信頼度が
増す効果がある。[Effects of the Invention] As explained above, the present invention covers the exposed portion of the wiring metal in the bonding pad portion with the passivation film by fixing the pellet to the lead frame and performing bonding, and then forming a passivation film. (FIG. 1-(b)), this has the effect of improving corrosion resistance and increasing reliability.
第１図（ａ）〜（Ｃ１は本発明の一実施例の断面図であ
る。第２図は従来の製法の断面図である。
１・・・・・・半導体基板、２・・・・・・第１のパッ
シベーション膜、３・・・・・・ポンディングパッド部
のアルミ、４・・・・・・ボンディング線、５・・・・
・・封止用樹脂、６・・・・・・第２のパッシベーショ
ン膜。
ｗ１＋
代理人 弁理士 内 原 田
第１図。
螺 −FIGS. 1(a) to (C1) are cross-sectional views of an embodiment of the present invention. FIG. 2 is a cross-sectional view of a conventional manufacturing method. 1... Semiconductor substrate, 2... ...First passivation film, 3... Aluminum of bonding pad part, 4... Bonding wire, 5...
... Sealing resin, 6... Second passivation film. w1+ Agent Patent Attorney Uchi Harada Diagram 1. Screw −
Claims (1)
後かつ樹脂封止工程前に、スパッタリング法あるいはプ
ラズマ気相成長法によりパッシベーション膜を成膜する
工程を有することを特徴とする半導体装置の製造方法。1. A method for manufacturing a semiconductor device, comprising the step of forming a passivation film by a sputtering method or a plasma vapor deposition method after a bonding step and before a resin sealing step in a resin-sealed semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10739987A JPS63271940A (en) | 1987-04-28 | 1987-04-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10739987A JPS63271940A (en) | 1987-04-28 | 1987-04-28 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63271940A true JPS63271940A (en) | 1988-11-09 |
Family
ID=14458161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10739987A Pending JPS63271940A (en) | 1987-04-28 | 1987-04-28 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63271940A (en) |
-
1987
- 1987-04-28 JP JP10739987A patent/JPS63271940A/en active Pending
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