JPS63270398A - 炭化珪素単結晶の成長方法 - Google Patents
炭化珪素単結晶の成長方法Info
- Publication number
- JPS63270398A JPS63270398A JP10290887A JP10290887A JPS63270398A JP S63270398 A JPS63270398 A JP S63270398A JP 10290887 A JP10290887 A JP 10290887A JP 10290887 A JP10290887 A JP 10290887A JP S63270398 A JPS63270398 A JP S63270398A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon carbide
- carbide single
- substrate
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 82
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000001020 plasma etching Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 230000035882 stress Effects 0.000 abstract 2
- 238000002360 preparation method Methods 0.000 abstract 1
- 230000008646 thermal stress Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 7
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10290887A JPS63270398A (ja) | 1987-04-24 | 1987-04-24 | 炭化珪素単結晶の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10290887A JPS63270398A (ja) | 1987-04-24 | 1987-04-24 | 炭化珪素単結晶の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63270398A true JPS63270398A (ja) | 1988-11-08 |
| JPH0443878B2 JPH0443878B2 (enrdf_load_stackoverflow) | 1992-07-17 |
Family
ID=14339956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10290887A Granted JPS63270398A (ja) | 1987-04-24 | 1987-04-24 | 炭化珪素単結晶の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63270398A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5363800A (en) * | 1991-06-12 | 1994-11-15 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers |
| EP1130135A1 (en) * | 1999-10-08 | 2001-09-05 | Hoya Corporation | Silicon carbide film and method for manufacturing the same |
| US6596080B2 (en) | 2000-04-07 | 2003-07-22 | Hoya Corporation | Silicon carbide and method for producing the same |
| FR2854641A1 (fr) * | 2003-05-05 | 2004-11-12 | Centre Nat Rech Scient | Procede de formation d'une couche de carbure de silicium sur une tranche de silicium |
| JP2013155111A (ja) * | 2013-05-07 | 2013-08-15 | Kwansei Gakuin | ＳｉＣ基板、炭素供給フィード基板及び炭素ナノ材料付きＳｉＣ基板 |
-
1987
- 1987-04-24 JP JP10290887A patent/JPS63270398A/ja active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5363800A (en) * | 1991-06-12 | 1994-11-15 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers |
| EP1130135A1 (en) * | 1999-10-08 | 2001-09-05 | Hoya Corporation | Silicon carbide film and method for manufacturing the same |
| US6416578B1 (en) | 1999-10-08 | 2002-07-09 | Hoya Corporation | Silicon carbide film and method for manufacturing the same |
| US6596080B2 (en) | 2000-04-07 | 2003-07-22 | Hoya Corporation | Silicon carbide and method for producing the same |
| FR2854641A1 (fr) * | 2003-05-05 | 2004-11-12 | Centre Nat Rech Scient | Procede de formation d'une couche de carbure de silicium sur une tranche de silicium |
| WO2004099471A3 (fr) * | 2003-05-05 | 2005-01-20 | Centre Nat Recherche | Procede de formation d’une couche de carbure de silicium sur une tranche de silicium |
| US7416606B2 (en) | 2003-05-05 | 2008-08-26 | Centre National De La Recherche Scientifique | Method of forming a layer of silicon carbide on a silicon wafer |
| JP2013155111A (ja) * | 2013-05-07 | 2013-08-15 | Kwansei Gakuin | ＳｉＣ基板、炭素供給フィード基板及び炭素ナノ材料付きＳｉＣ基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0443878B2 (enrdf_load_stackoverflow) | 1992-07-17 |
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