JPS63270398A - 炭化珪素単結晶の成長方法 - Google Patents

炭化珪素単結晶の成長方法

Info

Publication number
JPS63270398A
JPS63270398A JP10290887A JP10290887A JPS63270398A JP S63270398 A JPS63270398 A JP S63270398A JP 10290887 A JP10290887 A JP 10290887A JP 10290887 A JP10290887 A JP 10290887A JP S63270398 A JPS63270398 A JP S63270398A
Authority
JP
Japan
Prior art keywords
single crystal
silicon carbide
carbide single
substrate
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10290887A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0443878B2 (enrdf_load_html_response
Inventor
Masaki Furukawa
勝紀 古川
Akira Suzuki
彰 鈴木
Mitsuhiro Shigeta
光浩 繁田
Yoshihisa Fujii
藤井　良久
Atsuko Uemoto
植本　敦子
Kenji Nakanishi
健司 中西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10290887A priority Critical patent/JPS63270398A/ja
Publication of JPS63270398A publication Critical patent/JPS63270398A/ja
Publication of JPH0443878B2 publication Critical patent/JPH0443878B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP10290887A 1987-04-24 1987-04-24 炭化珪素単結晶の成長方法 Granted JPS63270398A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10290887A JPS63270398A (ja) 1987-04-24 1987-04-24 炭化珪素単結晶の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10290887A JPS63270398A (ja) 1987-04-24 1987-04-24 炭化珪素単結晶の成長方法

Publications (2)

Publication Number Publication Date
JPS63270398A true JPS63270398A (ja) 1988-11-08
JPH0443878B2 JPH0443878B2 (enrdf_load_html_response) 1992-07-17

Family

ID=14339956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10290887A Granted JPS63270398A (ja) 1987-04-24 1987-04-24 炭化珪素単結晶の成長方法

Country Status (1)

Country Link
JP (1) JPS63270398A (enrdf_load_html_response)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5363800A (en) * 1991-06-12 1994-11-15 The United States Of America As Represented By The United States National Aeronautics And Space Administration Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers
EP1130135A1 (en) * 1999-10-08 2001-09-05 Hoya Corporation Silicon carbide film and method for manufacturing the same
US6596080B2 (en) 2000-04-07 2003-07-22 Hoya Corporation Silicon carbide and method for producing the same
FR2854641A1 (fr) * 2003-05-05 2004-11-12 Centre Nat Rech Scient Procede de formation d'une couche de carbure de silicium sur une tranche de silicium
JP2013155111A (ja) * 2013-05-07 2013-08-15 Kwansei Gakuin ＳｉＣ基板、炭素供給フィード基板及び炭素ナノ材料付きＳｉＣ基板

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5363800A (en) * 1991-06-12 1994-11-15 The United States Of America As Represented By The United States National Aeronautics And Space Administration Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers
EP1130135A1 (en) * 1999-10-08 2001-09-05 Hoya Corporation Silicon carbide film and method for manufacturing the same
US6416578B1 (en) 1999-10-08 2002-07-09 Hoya Corporation Silicon carbide film and method for manufacturing the same
US6596080B2 (en) 2000-04-07 2003-07-22 Hoya Corporation Silicon carbide and method for producing the same
FR2854641A1 (fr) * 2003-05-05 2004-11-12 Centre Nat Rech Scient Procede de formation d'une couche de carbure de silicium sur une tranche de silicium
WO2004099471A3 (fr) * 2003-05-05 2005-01-20 Centre Nat Recherche Procede de formation d’une couche de carbure de silicium sur une tranche de silicium
US7416606B2 (en) 2003-05-05 2008-08-26 Centre National De La Recherche Scientifique Method of forming a layer of silicon carbide on a silicon wafer
JP2013155111A (ja) * 2013-05-07 2013-08-15 Kwansei Gakuin ＳｉＣ基板、炭素供給フィード基板及び炭素ナノ材料付きＳｉＣ基板

Also Published As

Publication number Publication date
JPH0443878B2 (enrdf_load_html_response) 1992-07-17

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