JPS63255366A - Method for coating conductive film on insulating substrate - Google Patents
Method for coating conductive film on insulating substrateInfo
- Publication number
- JPS63255366A JPS63255366A JP8958387A JP8958387A JPS63255366A JP S63255366 A JPS63255366 A JP S63255366A JP 8958387 A JP8958387 A JP 8958387A JP 8958387 A JP8958387 A JP 8958387A JP S63255366 A JPS63255366 A JP S63255366A
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- insulating substrate
- conductive
- evaporation source
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims description 19
- 238000000576 coating method Methods 0.000 title claims description 7
- 239000011248 coating agent Substances 0.000 title claims description 6
- 238000001704 evaporation Methods 0.000 claims abstract description 28
- 230000008020 evaporation Effects 0.000 claims abstract description 27
- 238000010891 electric arc Methods 0.000 claims abstract description 11
- 239000004020 conductor Substances 0.000 claims abstract description 10
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims description 13
- 239000010406 cathode material Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 239000000919 ceramic Substances 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract description 2
- 229910052758 niobium Inorganic materials 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 18
- 239000000463 material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、アーク式蒸発源を用いて絶縁性基体の表面
に導電性膜を被覆する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method of coating the surface of an insulating substrate with a conductive film using an arc evaporation source.
真空アーク放電によってカソード物質を蒸発させるアー
ク式蒸発源を用いて、導電性のシート、ワイヤー等の導
電性基体の表面に各種膜を被覆する方法が従来から行わ
れている。BACKGROUND ART Conventionally, there has been a method of coating various films on the surface of a conductive substrate such as a conductive sheet or wire using an arc type evaporation source that evaporates a cathode material by vacuum arc discharge.
これは、アーク式蒸発源によれば、■他の蒸発源（例え
ば電子ビーム蒸発源等）に比べて大きな成膜速度を得る
ことができ生産性が良い、■アーク放電によってカソー
ドを局部的に溶融させて蒸発させるため、溶融物がこぼ
れ落ちる恐°れは無く、蒸発源の向きを任意に選べる、
■蒸発されたカソード物質は一部イオン化されているた
め、基体にバイアス電圧を印加して当該イオンを加速す
ることによって、即ちいわゆるイオンブレーティングを
行うことによって、密着性の良い膜を形成することがで
きる、等の理由による。This is because, according to the arc type evaporation source, ■ it is possible to obtain a higher film formation rate than other evaporation sources (e.g. electron beam evaporation source, etc.) and has good productivity, and ■ the cathode is locally heated by arc discharge. Since it is melted and evaporated, there is no risk of the melt spilling out, and the direction of the evaporation source can be selected arbitrarily.
■Since the evaporated cathode material is partially ionized, a film with good adhesion can be formed by applying a bias voltage to the substrate and accelerating the ions, that is, by performing so-called ion blating. For reasons such as being able to do so.
ところが近年は、ガラス、セラミックス、絶縁性フィル
ム等の絶縁性基体の表面に、金属等の導電性膜を被覆す
る要望が出て来ているが、このような要望に対して、上
記のようなアーク式蒸発源を有効に活用することができ
ないという問題がある。However, in recent years, there has been a demand for coating the surfaces of insulating substrates such as glass, ceramics, and insulating films with conductive films such as metals. There is a problem that the arc type evaporation source cannot be used effectively.
これは、絶縁性基体に対しては、バイアス電圧を印加す
ることができないため、イオン化されたカソード物質を
基体に向けて加速することができず、そのため膜の密着
性が良くないからである。This is because a bias voltage cannot be applied to an insulating substrate, so the ionized cathode material cannot be accelerated toward the substrate, and therefore the adhesion of the film is poor.
そこでこの発明は、アーク式蒸発源を用いて、絶縁性基
体の表面に密着性の良好な導電性膜を被覆することがで
きる方法を提供することを目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for coating the surface of an insulating substrate with a conductive film having good adhesion using an arc type evaporation source.
Ｃ問題点を解決するための手段〕
この発明の被覆方法は、真空雰囲気中における工程であ
って、導電性物質の被着とイオンビーム照射とを併用し
て絶縁性基体の表面に第１の導電性膜を形成する第１の
工程と、当該第１の導電性膜に負のバイアス電圧を印加
した状態で、真空アーク放電によってカソード物質を蒸
発させるアーク式蒸発源を用いて、第１の導電性膜の表
面に導電性物質を更に蒸着させて第２の導電性膜を形成
する第２の工程とを備えることを特徴とする。Means for Solving Problem C] The coating method of the present invention is a process in a vacuum atmosphere, in which a first layer is coated on the surface of an insulating substrate by combining the deposition of a conductive substance and ion beam irradiation. A first process of forming a conductive film, and a first process using an arc type evaporation source that evaporates the cathode material by vacuum arc discharge while applying a negative bias voltage to the first conductive film. The method is characterized by comprising a second step of further depositing a conductive substance on the surface of the conductive film to form a second conductive film.
第″ｌの工程によって、絶縁性基体の表面に第１の導電
性膜が形成される。その際、イオンビーム照射を併用す
るため、イオンの押し込み作用によって、絶縁性基体と
第１の導電性膜との界面付近に両゛者の構成物質から成
る混合層が形成される。In step ``l'', a first conductive film is formed on the surface of the insulating substrate. At this time, since ion beam irradiation is also used, the insulating substrate and the first conductive film are formed by the pushing action of ions. A mixed layer consisting of both constituent substances is formed near the interface with the film.
この混合層は言わば模のような作用をするので、絶縁性
基体に対する第１の導電性膜の密着性は良い。Since this mixed layer acts like a model, the adhesion of the first conductive film to the insulating substrate is good.
そして第２の工程によって、前記第１の導電性膜の表面
に、アーク式蒸発源を用いて、第２の導電性膜が形成さ
れる。その際、第１の導電性膜に負のバイアス電圧を印
加しているため、アーク放電によって蒸発かつイオン化
された導電性物質が第１の導電性膜に向けて加速される
。そのため、第１の導電性膜に対する第２の導電性膜の
密着性も良くなる。In a second step, a second conductive film is formed on the surface of the first conductive film using an arc evaporation source. At this time, since a negative bias voltage is applied to the first conductive film, the conductive substance evaporated and ionized by the arc discharge is accelerated toward the first conductive film. Therefore, the adhesion of the second conductive film to the first conductive film also improves.
従って、絶縁性基体の表面に、密着性の良好な導電性膜
を生産性良く被覆することができる。Therefore, the surface of the insulating substrate can be coated with a conductive film having good adhesion with good productivity.
第１図は、この発明に係る方法を実施する装置の一例を
示す概略断面図である。第２図は、この発明に係る方法
によって導電性膜が被覆された絶縁性基体の一例を拡大
して部分的に示す概略断面図である。FIG. 1 is a schematic cross-sectional view showing an example of an apparatus for implementing the method according to the present invention. FIG. 2 is a schematic cross-sectional view partially showing an enlarged example of an insulating substrate coated with a conductive film by the method according to the present invention.
金属等の導電性材料から成り、図示しない真空排気装置
によって真空排気される真空容器２内に、例えばシード
状の絶縁性基体６を収納している。For example, a seed-shaped insulating substrate 6 is housed in a vacuum container 2 made of a conductive material such as metal and evacuated by a vacuum evacuation device (not shown).
また当該真空容器２内に、絶縁性基体６を例えば矢印Ａ
方向に搬送するためのローラ４ａ〜４ｆを収納している
。In addition, the insulating substrate 6 is placed in the vacuum container 2, for example, as indicated by the arrow A.
It houses rollers 4a to 4f for conveying in the direction.
このローラ４ａ〜４ｆの内、少な（ともこの例ではロー
ラ４ｅは金属等の導電性材料から成り、それにバイアス
電源２４から負のバイアス電圧を印加するようにしてい
る。Among these rollers 4a to 4f, a small number (in this example, roller 4e) is made of a conductive material such as metal, and a negative bias voltage is applied to it from a bias power supply 24.
そして真空容器２の天井部であって絶縁性基体６の上方
には、当該絶縁性基体６に向けて、絶縁性基体６の搬送
方向上手側から順に、第１のアーク式蒸発源１０ ａ
ｓイオン源１８および第２のアーク式蒸発源１０ｂを配
置している。On the ceiling of the vacuum container 2 and above the insulating substrate 6, first arc evaporation sources 10a are arranged in order from the upper side in the direction of conveyance of the insulating substrate 6 toward the insulating substrate 6.
An s ion source 18 and a second arc type evaporation source 10b are arranged.
アーク式蒸発源１０ａは、導電性物質から成るカソード
１２ａを有しており、それと真空容器２間にアーク電源
１６ａから例えば数十Ｖ〜数百Ｖ程度の電圧を印加して
両者間に真空直流アーク放電を行わせることによって、
カソード物質、即ち導電性物質１４ａを蒸発させること
ができる。このとき導電性物質１４ａの一部はアーク放
電によってイオン化されている。アーク式藩発源１０ｂ
側もこれと同様であり、１２ｂは導電性物質から成るカ
ソード、１６ｂはアーク電源、１４ｂは蒸発された導電
性物質である。向いずれも、アーク放電起動用のトリガ
等は図示を省略している。The arc type evaporation source 10a has a cathode 12a made of a conductive material, and a voltage of, for example, several tens of volts to several hundred volts is applied between the cathode 12a and the vacuum container 2 from an arc power source 16a to create a vacuum direct current between them. By causing arc discharge,
The cathode material, ie the conductive material 14a, can be evaporated. At this time, a part of the conductive substance 14a is ionized by arc discharge. Arc style clan source 10b
The sides are also similar, with 12b being a cathode made of a conductive material, 16b being an arc power source, and 14b being a evaporated conductive material. In both cases, the trigger for starting arc discharge and the like are not shown.
各アーク式蒸発源１０ａ、１０ｂにおけるカソード１２
ａ、、１２ｂの種類、即ちそこから蒸発させる導電性物
質１４ａ、１４ｂの種類としては、目的に応じて、例え
ばＴｉ ％ Ｚｒ ｓ Ｈｆ ＳＶ％ Ｎｂ、Ｔａ ％
Ｃｒ ％ Ｍｏ ＳＷ、、ＡＩ 、、Ｃ５Ｓｉ等の種
々のものが採り得る。この場合、導電性物質１４ａと１
４ｂとは互いに同種であっても良いし別種であっても良
い。Cathode 12 in each arc type evaporation source 10a, 10b
The types of conductive substances a, 12b, that is, the types of conductive substances 14a and 14b to be evaporated therefrom, may vary depending on the purpose, for example, Ti%ZrsHfSV%Nb,Ta%
Various materials such as Cr%MoSW, AI, C5Si, etc. can be used. In this case, the conductive substances 14a and 1
4b may be the same species or different species.
イオン源１８からは、加速されたイオンビーム２２を引
き出すことができる。２０はそのための引出し電極系で
ある。このイオンビーム２２のエネルギーは、例えば、
後述する混合層を効果的に形成するためには、照射する
イオンの飛程（平均射影飛程）が、アーク式蒸発源１０
ａによって絶縁性基体６上に形成する膜厚程度になるよ
うなものとすればよい。An accelerated ion beam 22 can be extracted from the ion source 18 . 20 is an extraction electrode system for this purpose. The energy of this ion beam 22 is, for example,
In order to effectively form the mixed layer described below, the range of irradiated ions (average projected range) must be
The thickness of the film formed on the insulating substrate 6 may be determined by a.
このイオンビーム２２を構成するイオンの種類は、Ｈｅ
、Ｎｅ ｓ Ａｒ等の不活性ガスイオンでも良いし、
導電性物質１４ａとの間で化合物膜（例えばＴｉＮ）を
形成する場合はそれを構成するイオン（例えばＮイオン
）でも良い。The type of ions constituting this ion beam 22 is He
, NesAr, or other inert gas ions may be used.
When forming a compound film (for example, TiN) with the conductive substance 14a, ions (for example, N ions) constituting the compound film may be used.
成膜に際しては、真空容器２内を所定の真空度（例えば
１０−’〜１０−’Ｔ ｏ ｒ ｒ程度）に排気し、絶
縁性基体６を矢印Ａ方向に例えば連続的に搬送しながら
、アーク式蒸発源１０ａ、１０ｂおよびイオン源１８を
動作させる。それによって絶縁性基体６の表面に、第２
図に示すような第１の導電性膜８ａおよび第２の導電性
膜８ｂから成る導電性膜８が連続的に被覆される。During film formation, the inside of the vacuum container 2 is evacuated to a predetermined degree of vacuum (for example, about 10-' to 10-' Torr), and while the insulating substrate 6 is continuously conveyed in the direction of arrow A, The arc type evaporation sources 10a, 10b and the ion source 18 are operated. As a result, the second
A conductive film 8 consisting of a first conductive film 8a and a second conductive film 8b as shown in the figure is continuously coated.
その際の工程には、大別すれば次の二つの工程が含まれ
ている。The process at that time includes the following two steps.
■ 第１は、絶縁性基体６の表面にアーク式蒸発源１０
ａからの導電性物質１４ａを蒸着し、それと同時に、あ
るいは第１図のような配置の場合はその後に、イオン源
１８からのイオンビーム２２を照射して、絶縁性基体６
のすぐ表面にまず第１の導電性膜８ａを形成する工程で
ある。■ First, an arc type evaporation source 10 is placed on the surface of the insulating substrate 6.
At the same time, or afterward in the case of the arrangement shown in FIG.
In this step, a first conductive film 8a is first formed immediately on the surface of the substrate.
この場合、イオンビーム２２の照射を併用するため、イ
オンの押し込み（ノックオン）作用によって、絶縁性基
体６と導電性膜８ａとの界面付近に両者の構成物質から
は混合層（ミキシング層）が形成される。この混合層は
言わば模のような作用をするので、絶縁性基体６に対す
る導電性膜８ａの密着性は良い。In this case, since irradiation with the ion beam 22 is used in combination, a mixed layer is formed near the interface between the insulating substrate 6 and the conductive film 8a by the ion pushing (knock-on) action from the constituent materials of the two. be done. Since this mixed layer acts like a model, the adhesion of the conductive film 8a to the insulating substrate 6 is good.
■ 第２は、上記絶縁性基体６が搬送されることによっ
て導電性膜８ａがσ−ラ４ｅにまで達すると、当該導電
性膜８ａに、バイアス電源２４からローラ４ｅを介して
例えば数百ｖ程度の負のバイアス電圧が印加された状態
となり、その状態でアーク式蒸発１１０ｂから導電性膜
８ａの表面に導電性物質１４ｂを更に蒸着させて第２の
導電性膜８ｂを形成する工程である。(2) When the conductive film 8a reaches the σ-ra 4e by transporting the insulating substrate 6, the conductive film 8a is supplied with, for example, several hundred VV from the bias power supply 24 via the roller 4e. This is a step in which a negative bias voltage of approximately 100% is applied, and in this state, a conductive substance 14b is further deposited on the surface of the conductive film 8a from the arc evaporation 110b to form a second conductive film 8b. .
この場合、導電性膜８ａには負のバイアス電圧を印加し
ているため、アーク放電によって一部イオン化された導
電性物質１４ｂが導電性膜８ａに向けて加速される。そ
のため、導電性膜８ａに対する導電性膜８ｂの密着性も
良い。またこの場合はいわゆるイオンブレーティングと
なるため、イオンの運動エネルギーによって導電性膜８
ｂの結晶性が向上すると共に、絶縁性基体６に対する導
電性物質１４ｂの回り込みが良くなる等の利点もある。In this case, since a negative bias voltage is applied to the conductive film 8a, the conductive substance 14b partially ionized by the arc discharge is accelerated toward the conductive film 8a. Therefore, the adhesion of the conductive film 8b to the conductive film 8a is also good. In this case, so-called ion blating occurs, so the kinetic energy of the ions causes the conductive film to
There are also advantages such as improved crystallinity of b and improved wraparound of the conductive substance 14b to the insulating substrate 6.
従って上記のような方法によれば、絶縁性基体６０表面
に、密着性等の良好な導電性膜８を被覆することができ
ると共に、第１の工程はともかく第２の工程にアーク式
蒸発源１０ｂを用いているため、その成膜速度が大きく
（例えば０．０５〜０．５μｍ／ｓｅＣ程度が可能で
ある）、従って生産性も良い。Therefore, according to the method described above, the surface of the insulating substrate 60 can be coated with the conductive film 8 having good adhesion, and apart from the first step, an arc type evaporation source is used in the second step. Since 10b is used, the film formation rate is high (for example, about 0.05 to 0.5 μm/sec is possible), and therefore the productivity is also good.
尚、被覆する導電性膜８の均一性をより良くするために
、アーク式蒸発源１０ａ、１０ｂやイオン源１８を複数
台ずつ用いたり、あるいはそれらに横長のもの（即ち絶
縁性基体６の幅方向に長いもの）を用いても良い。In order to improve the uniformity of the conductive film 8 to be coated, a plurality of arc type evaporation sources 10a, 10b or ion sources 18 may be used, or horizontally elongated ones (i.e., the width of the insulating substrate 6) may be used. (long in the direction) may also be used.
また、上手側の蒸発源は、バイアス電圧印加用の導電性
膜８ａを形成するのが主目的であるため、必ずしも大き
な成膜速度のものは必要では無く、従って上記のような
アーク式蒸発源１０ａの代わりに、ターゲットを不活性
ガスイオンの照射やマグネトロン放電によってスパツク
させる方式のもの、あるいは取付は方向が許せば、るつ
ぼ内の蒸発材料を電子ビームによって加熱蒸発させる方
式のもの等を用いても良い。In addition, since the main purpose of the upper evaporation source is to form the conductive film 8a for applying a bias voltage, it is not necessarily necessary to have a high deposition rate, and therefore an arc type evaporation source such as the one described above is used. Instead of 10a, a method in which the target is spattered by inert gas ion irradiation or magnetron discharge, or, if the installation direction allows, a method in which the evaporated material in the crucible is heated and evaporated by an electron beam, etc. can be used. Also good.
また導電性膜８ａにバイアス電圧を印加するためには、
導電性のローラ４ｅの代わりに、ブラシ、接触子等を用
いても良い。In addition, in order to apply a bias voltage to the conductive film 8a,
A brush, a contactor, etc. may be used instead of the conductive roller 4e.
また、初めの導電性膜８ａを形成する時に、衝突イオン
によって絶縁性基体６の表面が帯電（チャージアップ）
される問題がある場合は、第１図中に２点鎖線で示すよ
うなフィラメント２６を用いる等して、電子を絶縁性基
体６に向けて供給して当該帯電を中和させるようにして
も良い。Also, when forming the first conductive film 8a, the surface of the insulating substrate 6 is charged (charged up) by colliding ions.
If there is a problem with this, the charge can be neutralized by supplying electrons toward the insulating substrate 6, such as by using a filament 26 as shown by the two-dot chain line in FIG. good.
また必要に応じて、上記と同様の方法で絶縁性基体６の
下側の面等に′も、上側の面と同時に導電性膜８を被覆
しても良い。Furthermore, if necessary, the conductive film 8 may be coated on the lower surface of the insulating substrate 6 and the upper surface at the same time using a method similar to that described above.
また、以上においてはシート状の絶縁性基体６を例に説
明したが、絶縁性基体はそれに限られるものではなく、
テープ状、フィルム状、板状、ワイヤー状、ケーブル状
等のものであっても良い。In addition, although the sheet-like insulating substrate 6 has been explained above as an example, the insulating substrate is not limited to this.
It may be in the form of a tape, film, plate, wire, cable, or the like.
その材質としては、例えばガラス、セラミックス、その
他の絶縁物等が採り得る。The material may be, for example, glass, ceramics, or other insulators.
また、上記例と違って、絶縁性基体は、断続的に搬送し
ても良いし、円板状のものであればそれを回転させるこ
とによって上記第１および第２の工程のような処理を施
しても良いし、あるいは大きさが限定されているもので
あれば、アーム等の移送手段によって上記のような第１
の工程を行う場所から第２の工程を行う場所へ移送して
も良い。Also, unlike the above example, the insulating substrate may be transported intermittently, or if it is disc-shaped, it may be rotated to perform the treatments in the first and second steps. Alternatively, if the size is limited, the first
It may also be transported from the location where the first step is performed to the location where the second step is performed.
以上のようにこの発明によれば、アーク式蒸発源を用い
て、しかもバイアス電圧を印加しながら導電性膜を形成
することができるので、絶縁性基体の表面に密着性の良
好な導電性膜を生産性良く被覆することができる。As described above, according to the present invention, a conductive film can be formed using an arc type evaporation source while applying a bias voltage, so that a conductive film with good adhesion can be formed on the surface of an insulating substrate. can be coated with good productivity.
第１図は、この発明に係る方法を実施する装置の一例を
示す概略断面図である。第２図は、この発明に係る方法
によって導電性膜が被覆された絶縁性基体の一例を拡大
して部分的に示す概略断面図である。
２・・・真空容器、４ａ〜４ｆ・・・ローラ、６・・・
絶縁性基体、８・・・導電性膜、８ａ・・・第１の導電
性膜、８ｂ・・・第２の導電性膜、１０ａ、１０ｂ・・
・アーク式蒸発源、１４ａ、１４ｂ・・・導電性物質、
１８・・・イオン源、２２・・・イオンビーム、２４・
・・バイアス電源。FIG. 1 is a schematic cross-sectional view showing an example of an apparatus for implementing the method according to the present invention. FIG. 2 is a schematic cross-sectional view partially showing an enlarged example of an insulating substrate coated with a conductive film by the method according to the present invention. 2...Vacuum container, 4a-4f...Roller, 6...
Insulating substrate, 8... Conductive film, 8a... First conductive film, 8b... Second conductive film, 10a, 10b...
・Arc type evaporation source, 14a, 14b... conductive material,
18...Ion source, 22...Ion beam, 24.
...Bias power supply.
Claims (1)
の被着とイオンビーム照射とを併用して絶縁性基体の表
面に第１の導電性膜を形成する第１の工程と、当該第１
の導電性膜に負のバイアス電圧を印加した状態で、真空
アーク放電によってカソード物質を蒸発させるアーク式
蒸発源を用いて、第１の導電性膜の表面に導電性物質を
更に蒸着させて第２の導電性膜を形成する第２の工程と
を備えることを特徴とする絶縁性基体への導電性膜の被
覆方法。(1) A first step in a vacuum atmosphere in which a first conductive film is formed on the surface of an insulating substrate using a combination of deposition of a conductive substance and ion beam irradiation; 1
A conductive material is further deposited on the surface of the first conductive film using an arc evaporation source that evaporates the cathode material by vacuum arc discharge while applying a negative bias voltage to the first conductive film. 2. A method for coating an insulating substrate with a conductive film, the method comprising: a second step of forming a conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8958387A JPS63255366A (en) | 1987-04-10 | 1987-04-10 | Method for coating conductive film on insulating substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8958387A JPS63255366A (en) | 1987-04-10 | 1987-04-10 | Method for coating conductive film on insulating substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63255366A true JPS63255366A (en) | 1988-10-21 |
Family
ID=13974807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8958387A Pending JPS63255366A (en) | 1987-04-10 | 1987-04-10 | Method for coating conductive film on insulating substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63255366A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014167168A (en) * | 2014-04-21 | 2014-09-11 | Ulvac-Riko Inc | Apparatus and method for forming fine particle |
| RU195652U1 (en) * | 2019-08-05 | 2020-02-03 | Ооо «Инноватехпром» | METAL SPRAYING DEVICE IN VACUUM |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50109818A (en) * | 1974-02-08 | 1975-08-29 | ||
| JPS5395137A (en) * | 1977-02-01 | 1978-08-19 | Oriental Engineering Co | Low temperature gas phase plating method |
| JPS5881967A (en) * | 1981-11-09 | 1983-05-17 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for preparing thin film of compound |
| JPS5950170A (en) * | 1982-09-16 | 1984-03-23 | ゲンナデイ・ヴアシリエヴイツチ・クリユ−チコ | Plasma arc device for coating painting |
-
1987
- 1987-04-10 JP JP8958387A patent/JPS63255366A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50109818A (en) * | 1974-02-08 | 1975-08-29 | ||
| JPS5395137A (en) * | 1977-02-01 | 1978-08-19 | Oriental Engineering Co | Low temperature gas phase plating method |
| JPS5881967A (en) * | 1981-11-09 | 1983-05-17 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for preparing thin film of compound |
| JPS5950170A (en) * | 1982-09-16 | 1984-03-23 | ゲンナデイ・ヴアシリエヴイツチ・クリユ−チコ | Plasma arc device for coating painting |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014167168A (en) * | 2014-04-21 | 2014-09-11 | Ulvac-Riko Inc | Apparatus and method for forming fine particle |
| RU195652U1 (en) * | 2019-08-05 | 2020-02-03 | Ооо «Инноватехпром» | METAL SPRAYING DEVICE IN VACUUM |
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