JP2002180241A - Film forming apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film forming apparatus capable of continuously forming film so as to have a sufficiently dense structure in the initial stage of a film forming process. SOLUTION: The apparatus is provided with an electrode 8, which is arranged in a vacuum container 2 and generates a high frequency electric field inside the vacuum container 2, an evaporation source 7 to contain a film material M, a transport apparatus 9 to transport a substrate, a plasma generating space 3 and a transport space 4 of the substrate formed in the vacuum container 2 and a boundary wall 6, which is arranged between the plasma generating space 3 and the transport space 4 and in which a film forming slit 5 is opened, the film forming slit 5 is successively constituted of a first slit 51 of a small area, a second slit 52 of a large area, and a third slit 53 of a small area in order from the upstream side along an advancing direction of the substrate W.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a film forming apparatus.
More specifically, the present invention relates to a film forming apparatus for forming (forming) a film on a substrate by ion plating or the like.

[0002]

2. Description of the Related Art Conventionally, as an apparatus for ion plating, an apparatus described in Japanese Patent Publication No. 1-48347 is known. This apparatus includes a substrate holder for holding a substrate to be formed in a vacuum chamber and an evaporation source for evaporating a film material, and the substrate holder constitutes an electrode. A high-frequency power supply and a DC power supply for applying high-frequency power and DC voltage between the substrate holder and the inner wall of the chamber or between the substrate holder and the evaporation source are provided.

[0003] The film material is evaporated by applying high frequency power and DC voltage between the substrate holder and the inner wall of the chamber or between the substrate holder and the evaporation source while evaporating the film material. Is ionized and excited to adhere to the substrate.

[0004] Among films formed on a substrate by such an apparatus, a thin film made of a metal oxide has excellent physical strength and is used as a protective layer on the surface of a substrate made of glass or the like. Others are formed as a protective layer of a glass substrate for a display device. In particular,
In a protective layer of a plasma display panel that emits light by discharge in a gas, sputter resistance to the impact of ions in the discharge gas is required. Since the sputter resistance largely depends on the properties of the film, it is necessary that the structure of the film is formed densely, that is, the film has high quality in order to satisfy this requirement. That is,
One of the columnar structures grown so as to extend in the direction of the surface of the film from the interface between the film and the substrate is used as a unit to form a structure filled with a large number of such columnar structures, in other words, the number of the columnar structures. It is necessary to increase the density. For this purpose, it is necessary that the structure be sufficiently dense at the initial stage of film formation.

[0005]

However, in order to form a film having such a fine structure with a conventional film forming apparatus, it is necessary to slow down the film forming speed. It takes a long enough time to let it. As a result, production efficiency is reduced. Also, controlling the film formation rate is a cumbersome task.

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and it is possible to continuously form a film with a sufficiently dense structure in an initial stage of a process of forming a film on a substrate surface. It is an object to provide a film forming apparatus.

[0007]

According to the present invention, there is provided a film forming apparatus comprising: a film forming vacuum vessel in which a high-frequency electric field can be generated; a plasma generating space formed in the film forming vacuum vessel; A transport space for the target substrate, a transport device for transporting the film-forming target substrate, an evaporation source including a film material disposed in the plasma generation space, and a space between the plasma generation space and the transport space. And a boundary wall in which an evaporating film material passage slit is opened, wherein the evaporating film material passage slits are arranged in order from the upstream side along the traveling direction of the film formation target base material. It is composed of a first slit having an area and a second slit having a large area.

According to this film forming apparatus, the film formation by the evaporation film material passing through the small slit of the first slit is performed slowly, and the film formation by the evaporation film material passing through the large area of the second slit is relatively small. Done faster. As a result, a sufficiently dense structure can be obtained at the initial stage of film formation by the first slit. Next, a film is formed at a normal speed which is not different from the conventional one by the second slit, but since the initial formation structure in contact with the surface of the base material is a crystal which is sufficiently densely aligned,
A crystal that is grown therefrom provides a texture that is more closely aligned than before. The film thus formed has better crystallinity than the conventional film, so that the film quality is greatly improved.

Then, the above-mentioned slit for passing the evaporating film material,
In a film forming apparatus further including a third slit having a small area on the downstream side of the second slit, a sufficiently dense structure can be obtained at the final stage of film formation by the third slit. It is preferable because it improves.

An adjusting plate is provided in the evaporating film material passage slit so as to be movable in the direction of transport of the substrate to be film-formed. When the adjusting plate moves, the opening area of the evaporating film material passage slit is increased. It is preferable that the film forming apparatus is configured so that the film forming speed can be changed with a simple configuration. Since the small area and the large area in this case are achieved by the adjustment plate, all the openings formed in the boundary wall may have the same area.

An ion bombard chamber is provided upstream of the transfer space in the film forming vacuum vessel so as to be isolated from and communicate with the transfer space, and the ion bombard chamber can be evacuated. In addition, in a film forming apparatus in which a high frequency electric field is generated therein and a plasma source gas supply device is provided in an ion bombarding chamber, an ion bombarding process is performed prior to a film forming process on a substrate. To clean the surface of the substrate.

[0012] In the film forming apparatus according to the present invention,
Adjacent to the film-forming vacuum container, a vacuum-forming film-forming substrate supply chamber and a film-forming substrate sending chamber, each of which is provided so as to be separable and communicable with the film forming vacuum container, are provided. In the film forming apparatus, the transfer device is configured to transfer the substrate to be deposited from the supply chamber for the substrate to be deposited to a deposition-substrate delivery chamber through a vacuum chamber for deposition. The substrate can be sequentially sent out from the substrate supply chamber to the substrate delivery chamber while forming a film through the film forming vacuum vessel. A so-called in-line type film forming apparatus is realized.

[0013] Further, the above-mentioned transport device is a holding device for holding a substrate on which a film is to be formed, a moving device for moving the holding device to pass over a film forming slit, and And a power supply device for supplying high-frequency power to the film-forming apparatus, wherein the holding device has a function as an electrode for generating a high-frequency electric field. Since a high-frequency electric field is generated by supplying power to the holding device when the base material passes over the film forming slit (since the holding device functions as an electrode), an effective range for the film forming surface of the base material Since a plasma is generated during the process, an efficient film forming apparatus is realized.

There are various preferred embodiments of the above-mentioned transport device as described below.

First, the holding device has an electrode plate and a clamp on the lower surface of the electrode plate for holding the substrate to be formed.

Secondly, the holding device is a device for holding a substrate on which an electrode is formed on the surface thereof, and has a frame-shaped electrode member having an opening in the center. The opening is at least a film formation target range in the film formation target substrate.

Third, as the moving device, a plurality of rollers on which the holding device is mounted are employed, and at least a part of the rollers is used as a rotary driving roller which rotates in the direction of conveying the holding device. What you composed.

Fourth, the moving device includes a rail on which the holding device is movably engaged, and a wire connected to the holding device engaged with the rail to move the holding device.

Fifth, the power supply device is configured to supply power to the holding device through the moving device.

Sixth, among the above-mentioned transporting devices which are supplied with power to the holding device through the moving device, the one in which the moving device is constituted by a moving device using the above-mentioned roller is the film forming space in the above-mentioned roller. Are arranged so that power is supplied to all the rollers arranged in the range or a part of the rollers. Alternatively, among the transfer devices that are supplied with power to the holding device through the transfer device, the transfer device configured as a transfer device using a rail and a wire includes a power supply to a range of a film formation space among the rails. Some are configured to work. For example, a conductive material may be formed only in the film forming space within the entire length of the rail.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a film forming apparatus according to the present invention will be described with reference to the accompanying drawings.

FIG. 1 shows a so-called in-line type for continuously forming a film on the surface of each substrate W while sequentially transporting a plurality of substrates W (hereinafter simply referred to as substrates). It is a film forming apparatus 1.

The film forming apparatus 1 includes a vacuum vessel 2 in which a lower plasma generation space 3 and an upper substrate transport space 4 are formed. Both spaces 3 and 4 are configured to be evacuated to a vacuum. At the boundary between the plasma generation space 3 and the substrate transport space 4, a boundary wall 6 is formed in which a film-forming slit 5 communicating the spaces 3 and 4 is opened. The film-forming slit 5 is for allowing the plasma-like film material M generated in the plasma generation space 3 to pass through and reach the substrate W moving in the substrate transport space 4.

An evaporating source 7 and an electrode 8 are provided in the plasma generation space 3, and a substrate W transport device 9 and substrate heaters 10 a and 10 b are provided in the substrate transport space 4. Are arranged. The evaporation source 7 includes a film material M and an open container (hereinafter, referred to as a crucible) 1 on which the film material M is placed.
1 and an electron gun 12 for heating and evaporating the film material M on the crucible 11. Reference numeral 13 denotes a gas supply device for supplying a reaction gas, a plasma generation gas, and the like to the inside of the vacuum vessel 2 as necessary. Reference numeral 14 denotes an exhaust device for evacuating the inside of the container 2.

The electrode 8 is provided immediately below the boundary wall 6. A high frequency power supply 15, a matching circuit 16, and a DC power supply 17 are connected to the electrode 8. Thereby, a high frequency power and a DC bias voltage for generating plasma are applied between the electrode 8 and the inner wall of the vacuum vessel 2. The film material ionized in the plasma is accelerated by the bias voltage and adheres to the substrate surface.

FIG. 2 shows the film forming slit 5. The film forming slit 5 has a first slit 51 and a third slit 53 having a small area and a second slit 52 having a large area.
It is composed of The first slit 51, the third slit 53, and the second slit 52 have the same width dimension, but the first slit 51 and the third slit 53 have the same dimension in the transport direction of the base material W. small,
The second slit 52 is enlarged.

When the base material W moves in the base material transport space 4 at a constant speed, the film formation by the evaporation film material passing through the slits 51 and 53 having a small area gradually occurs on the surface of the base material W. The formation of the film by the evaporation film material passing through the large-area slit 52 is performed relatively quickly. in this way,
The film formation speed can be changed to a plurality of stages without depending on the control of the transport speed of the substrate W, the evaporation source, and the like. As a result, a sufficiently dense structure can be obtained by the first slit 51 at an early stage of film formation. Then, the second slit 52
A film is formed at a normal speed which is not different from the conventional one, but since the initial formation structure in contact with the surface of the base material W is a crystal which is sufficiently densely aligned, the crystal growing therefrom is denser than the conventional one. An aligned tissue is obtained. Then, a sufficiently dense structure is obtained by the third slit 53 at the final stage of film formation.

The quality of the thus formed film is greatly improved as compared with the conventional film. In the present invention, a high film quality can be obtained without the necessity of providing the third slit 53, but the provision of the third slit 53 is preferable because the film quality is further improved. For example, when used as a plasma display panel, the surface of the protective film exhibits particularly high sputter resistance, so that the life of the film can be extended.

FIG. 3 shows a different film forming slit 60. The film forming slit 60 can change the opening area of all of the first slit 61 and the third slit 63 having a small area and the second slit 62 having a large area. The width dimensions of the slits 61, 62, 63 are the same and cannot be changed, but the length in the longitudinal direction (substrate transport direction) can be increased or decreased. Specifically, adjustment plates 71, 72, which can slide in the longitudinal direction with respect to each of the slits 61, 62, 63 to open and close the opening,
73 are provided. With this configuration, each adjustment plate 7
1, 72 and 73 are individually moved to change the opening area. In this case, three slits may be opened in the boundary wall 6 with the same dimensions.

As shown in FIG. 1, an ion bombard chamber 18 is located upstream of the substrate transport space 4 in the transport direction of the substrate W.
Are arranged. An opening / closing door 19 having an insulating function is provided at a boundary between the ion bombard chamber 18 and the substrate transport space 4. The ion bombard chamber 18 is connected to the exhaust device 14 so as to be independently evacuated to a vacuum. An electrode 20 and a gas supply device 21 are provided inside the ion bombard chamber 18, and a high frequency power supply 22 is connected to the electrode 20. Thus, after the ion bombard chamber 18 is evacuated, a plasma source gas such as argon or oxygen is supplied, and high-frequency power is applied between the electrode 20 and the inner wall of the ion bombard chamber 18 to form plasma. The generated positive ions are accelerated by a DC bias voltage and collide with the substrate (ion bombardment) to remove impurities and the like attached to the surface of the substrate W.

A base material supply chamber 24 is provided upstream of the ion bombard chamber 18, and a base material delivery chamber 25 is provided downstream of the base material transfer space 4. The boundary between the substrate supply chamber 24 and the ion bombard chamber 18 and the substrate transport space 4
Opening and closing doors 26 and 27 each having an insulating function are disposed at the boundary between the substrate sending chamber 25 and the base material sending chamber 25. Both rooms 24, 2
5 are connected to an exhaust device 14 so as to be individually evacuated to a vacuum.

With this configuration, the substrate supply chamber 24 is evacuated after the substrate W is loaded therein, and then the door 26 is opened to transport the substrate W into the ion bombardment chamber 18.
The door 26 is closed. The substrate W is an ion bombard chamber 18
After the ion bombardment process is performed, the door 19 is opened and is carried into the substrate transport space 4, and the door 19 is closed.
The base material W on which the film formation is completed in the base material transport space 4 is carried into the base material delivery chamber 25 after the door 27 between the base material delivery chamber 25 which is already in a vacuum state is opened. Then, the door 27
Is closed, and the substrate W is carried out of the substrate delivery chamber 25. Such an operation is performed continuously. The transfer of the substrate W in the continuous processing step described above is performed by the transfer device 9.

FIG. 4 shows an example of the transfer device. First, a number of rollers 29 are arranged in the base material transport space 4 along the traveling direction of the base material W. Among these rollers 29, the rollers 29 arranged in the range of the film forming slit 5
Only b is arranged at an interval on the left and right sides.
The endless belt 3 is supported by each row of the rollers 29.
It is multiplied by zero. Roller 29a at both ends of roller row
One or both are drive rollers that are driven to rotate.
The same transport roller 29 and belt 3 are also provided in the ion bombard chamber 18, the substrate supply chamber 24, and the substrate delivery chamber 25.
0 is provided. With such a configuration, the base material W is placed on the left and right sides of the belt 30 on both sides, and the belt 30 is moved from the ion bombard chamber 18 side to the base material delivery chamber 25.
It is conveyed by rotating to the side. The space between the belts 30 on both sides and the space between the rollers 29 in the range of the film forming slit 5 are sized so that a predetermined film forming range of the base material W is secured. Note that all the rollers 29 may be arranged on both the left and right sides with an interval therebetween. Also, without using the belt 30, all the rollers 29,
Alternatively, every other or every second roller may be used as a driving roller to convey the substrate W.

In the present invention, the belt 30 and the roller 29
It is not limited to. For example, as shown in FIG.
A frame-shaped tray 32 on which a sheet is placed may be movably engaged with the rail 31. This tray 3
An opening 33 covers a predetermined film forming range of the base material W.
Are formed. The tray 32 is connected to a wire 35 wrapped around a drive roller (not shown) disposed on the side of the ion bombard chamber 18 and the side of the base material delivery chamber 25, and the tray 32 and the base material delivery chamber are connected to each other. It can be reciprocated between the 25 side. Ion bombard chamber 18,
In the base material supply chamber 24 and the base material delivery chamber 25, the above-described transport roller 29 and belt 30 may be provided.

In FIG. 1, reference numerals 10a and 10b denote heaters for heating the substrate W. In addition, the heater 1 a is located near the lower surface of the heater 10 a above the film forming slit 5.
A heater protection member 40 is provided so as to cover Oa. The heater protection member 40 is formed of a grounded mesh, and protects the heater 10a by blocking high frequency when generating plasma.

In the above embodiment, the electrode 8 is fixed in the vacuum vessel 2. However, the present invention is not limited to such a configuration. The electrodes are arranged so that a high-frequency electric field is generated so that effective plasma is generated on the film forming surface side of the substrate W on which the film is to be formed, and the ionized film material is accelerated toward the film forming surface. Are preferably arranged so as to generate a direct-current electric field which collides and promotes diffusion on the film forming surface.

FIG. 6, viewed obliquely from below, shows an electrode 41 which is well constructed and arranged from this point of view. That is, it is not an electrode fixed in the vacuum vessel.
Electrode 8 and transport device 9 in substrate transport space 4 of FIG.
Instead of the above, a transport device having an electrode function is provided as follows. The electrode 41 has a function as a holding device for holding the base material W, and has an electrode plate part 42 and a clip part 43 for gripping the base material W on the lower surface thereof. The base material is automatically gripped by the clip part 43. The gripping portion of the base material W by the clip portion 43 is set outside the film formation target range. This electrode 41 has a substrate W
Are transported while being placed on a number of rollers 29 arranged along the traveling direction of the roller. The arrangement of the rollers 29 is spaced from each other on both the left and right sides in the traveling direction of the base material W in order to avoid interference with the clip portion 43, but the interval between the left and right rollers is the same as in FIG. It is. All the rollers 29 or every other or every second roller is configured to convey the substrate W as a driving roller.

As shown in FIG. 7, all of the rollers 29b arranged on both sides of the film forming slit 5 or any of them (for example, the upstream end and / or the downstream end of the film forming slit 5 range). A power supply shoe (power supply shoe) 44 is disposed in a state of being elastically pressed. The high-frequency power supply 15, the matching circuit 16, and the DC power supply 17 are connected to the power supply shoe 44.
Thus, power is supplied to the electrode 41 through the roller 29b. According to this configuration, the substrate W is formed by the film forming slit 5
Is reached, a high-frequency power and a DC voltage are applied between the electrode plate portion 42 above the base material W and the inner wall (or crucible) of the vacuum vessel 2.

In the present invention, the device for transporting the electrode 41 is not limited to the roller 29b. For example, as shown in FIG. 5, rails 31 may be laid on both left and right sides instead of the rollers, and the electrodes 41 may be movably engaged with the rails 31. And, on the electrode 41,
The wire 3 wrapped around a drive roller (not shown) disposed on the ion bombard chamber 18 side and the base material delivery chamber 25 side
5 and the ion bombard chamber 18 side and the substrate delivery chamber 2
What is necessary is just to make it reciprocate between 5 sides. Power may be supplied through the rail 31 or the wire 35. When power is supplied through the rail 31, if the rail 31 is formed of a conductive material only in the range of the film forming slit 5, when the base material W reaches the film forming slit 5, the electrode plate portion 42 and the vacuum vessel 2 are formed. High-frequency power and a DC voltage are applied to the inner wall (or crucible) of the battery.

FIG. 8 shows a transport device 45 for transporting a substrate having electrodes formed on the substrate itself, for example, a front plate (hereinafter simply referred to as a substrate) P of a plasma display panel. . The base material P is a comb-shaped display electrode (transparent electrode) T on both sides of the surface of the glass substrate Pa.
a and Tb are formed so as to mesh with each other. Metal electrodes (not shown) as bus electrodes are formed on the upper surfaces of these transparent electrodes Ta and Tb. The transfer device 45 applies high-frequency power and DC voltage using the electrodes Ta and Tb of the base material P.

This transport device 45 is composed of a frame-shaped tray 46 for placing the substrate P thereon, and a number of rollers 29 arranged along the direction of travel of the substrate P. Of the rollers 29, only the rollers 29b arranged in the range of the film forming slits 5 are arranged on both left and right sides with an interval therebetween. The left and right sides of the tray 46 are rollers 2 on both sides.
9 and transported. An opening 47 is formed in the tray 46 so as to cover a predetermined film forming range of the base material P placed thereon. Also, the left and right rollers 29b
The distance between them is the same as in FIGS.
All the rollers 29 or every other or every second roller is configured to convey the substrate W as a driving roller. The above-described power supply shoe 44 (FIG. 7) is disposed on all or any of the rollers 29b arranged on both sides of the film forming slit 5 in a state of being elastically pressed. The power supply shoe 44 is connected to the power supplies 15, 16, and 17 described above. Therefore, the tray 46 becomes an electrode member when it comes into contact with the supplied roller.

Therefore, when the substrate P is placed on the tray 46, the electrodes Ta and Tb of the substrate P are in contact with the tray 46, and the tray 46 is supplied with power to the film forming slit 5. Upon reaching the roller 29b, high-frequency power and DC voltage are applied between the base material P and the inner wall (or crucible) of the vacuum vessel 2.

The present invention is not limited to the rollers 29.

For example, as shown in FIG. 9, instead of the rollers, rails 31 may be laid on the left and right sides, and a clamp member or a mounting member 48 may be movably disposed on each rail 31. FIG. 9 shows an example in which the base material P is transported in the short direction. The base material P is placed so that the electrodes Ta and Tb on both sides thereof come into contact with the placement member 48. Both mounting members 48 are connected to wires 35 wrapped around driving rollers (not shown) disposed on the ion bombard chamber 18 side and the base material delivery chamber 25 side, and the ion bombard chamber 18 side and the base material delivery chamber 25 are connected. Reciprocating between the sides.

In any case, the electrodes of the base material P can be used effectively.

The transfer device having the electrode function described above is configured to supply power in the range of the film forming slit in the substrate transfer space 4. However, it is possible to use the transfer device having the electrode function also in the ion bombard chamber 18. Then, power may be supplied to the transfer device also in the ion bombard chamber 18. According to this configuration, the electrode 20 fixed to the ion bombard chamber 18 becomes unnecessary.

[0047]

According to the present invention, a film can be continuously formed so as to have a sufficiently dense structure in an initial stage of the film formation process. Especially magnesium oxide (MgO)
This is effective for film materials that are difficult to crystallize when the film is thin at the initial stage of film formation. Not only MgO but also metal oxides having a high melting point, such as silicon oxide (SiO ₂ ) and titanium dioxide (TiO ₂ ) aluminum oxide (Al ₂ O ₅ ), are difficult to crystallize. is there.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an embodiment of a film forming apparatus of the present invention.

FIG. 2 is a perspective view showing an example of a film forming slit in the film forming apparatus of FIG.

FIG. 3 is a perspective view showing another example of a film forming slit in the film forming apparatus of FIG.

FIG. 4 is a perspective view showing one embodiment of a transfer device in another embodiment of the film forming apparatus of the present invention.

FIG. 5 is a perspective view showing another embodiment of the transport device of the present invention.

FIG. 6 is a perspective view showing a further alternative embodiment of the transport device of the present invention, as viewed obliquely from below.

FIG. 7 is a sectional view taken along line IIV-IIV of FIG. 4;

FIG. 8 is a plan view showing still another embodiment of the transport device of the present invention.

FIG. 9 is a plan view showing still another embodiment of the transfer device of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Film-forming apparatus 2 Vacuum container 3 Plasma generation space 4 Substrate transport space 5 Film-forming slit 51 First slit 52 Second slit 53 Third slit 6 Boundary wall 7 Evaporation source 8 Electrode 9 Transport device 10a, 10b Substrate heating Heater 11 Crucible 12 Electron gun 13 Gas supply device 14 Exhaust device 15 High frequency power supply 16 Matching circuit 17 DC power supply 18 Ion bombard chamber 19 Opening door 20 Electrode 21 Gas supply device 22 High frequency power supply 24 Substrate supply chamber 25 Substrate delivery chamber 26 , 27 door 29 roller 29a drive roller 29b both-side roller 30 belt 31 rail 32 tray 33 opening 34 film material supply device 35 wire 40 heater protection member 41 electrode 42 electrode plate portion 43 clip portion 44 power supply shoe 45 transfer device 46 tray 47 opening 40 Gas supply device 41 Degasifier 60 film slit 61 first slit 62 a second slit 63 a third slit 71, 72, 73 adjusting plate P, W substrate

Claims (6)

[Claims] 1. A film forming vacuum container in which a high-frequency electric field can be generated, a plasma generating space formed in the film forming vacuum container and a space for transporting a film forming substrate, and a film forming substrate A transport device for transporting the film, an evaporation source including a film material disposed in the plasma generation space, and a vapor film material passage slit disposed between the plasma generation space and the transport space are opened. The evaporating film material passing slit, the first slit having a small area and the second slit having a large area, which are arranged in order from the upstream side along the traveling direction of the base material for film formation. A film forming apparatus comprising: 2. The film forming apparatus according to claim 1, wherein the evaporating film material passage slit further includes a small slit having a small area downstream of the second slit. 3. An evaporating film material passing slit is provided with an adjusting plate which is movable in a transport direction of the substrate to be film-formed, and the adjusting plate moves so that an opening area of the evaporating film material passing slit is provided. The film forming apparatus according to claim 1, wherein the film thickness is changed. 4. An ion bombard chamber, which is provided on the upstream side of the transfer space in the vacuum chamber for film formation so as to be isolated from and communicate with the transfer space, wherein the ion bombard chamber can be evacuated. 2. The film forming apparatus according to claim 1, wherein a high-frequency electric field is generated therein, and a plasma source gas supply device is provided in the ion bombardment chamber. 5. A vacuum-equipped film-forming substrate supply chamber and a film-forming substrate, which are arranged adjacent to and can communicate with the film-forming vacuum container, respectively. A delivery chamber is provided, and the transport device is configured to transport the substrate to be deposited from the supply chamber for the substrate to be deposited to the deposition chamber through the vacuum chamber for deposition. The film forming apparatus according to claim 1. 6. A holding device for holding a substrate on which a film is to be formed, a moving device for moving the holding device to pass over a film forming slit, and The film forming apparatus according to claim 1, further comprising a power supply device for supplying high-frequency power, wherein the holding device has a function as an electrode for generating a high-frequency electric field.