JPS63244842A - Ion implantation into compound semiconductor - Google Patents
Ion implantation into compound semiconductorInfo
- Publication number
- JPS63244842A JPS63244842A JP7924287A JP7924287A JPS63244842A JP S63244842 A JPS63244842 A JP S63244842A JP 7924287 A JP7924287 A JP 7924287A JP 7924287 A JP7924287 A JP 7924287A JP S63244842 A JPS63244842 A JP S63244842A
- Authority
- JP
- Japan
- Prior art keywords
- ion implantation
- sif
- compound semiconductor
- becomes small
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 title claims abstract description 17
- 150000001875 compounds Chemical class 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 7
- -1 compound ions Chemical class 0.000 claims abstract description 6
- 150000002500 ions Chemical class 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000001133 acceleration Effects 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 6
- 229910004014 SiF4 Inorganic materials 0.000 abstract description 4
- 238000010884 ion-beam technique Methods 0.000 abstract description 4
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 229910004016 SiF2 Inorganic materials 0.000 description 4
- MGNHOGAVECORPT-UHFFFAOYSA-N difluorosilicon Chemical compound F[Si]F MGNHOGAVECORPT-UHFFFAOYSA-N 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は化合物半導体へのイオン注入方法の改良に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to an improvement in a method of ion implantation into a compound semiconductor.
〈従来の技術〉
従来より、化合物半導体の能動層等の形成工程において
、制御性、均一性だ優れたイオン注入方法が広く用いら
れている。例えばＧａＡｓの場合、イオン注入法により
ＬＳＩ規模の集積度を持つデバイスも多く開発されてい
る。デジタル用として高性能が期待されるこれらＧａＡ
ｓＬＳＩの基本構成要素である電界効果トランジスタ（
ＦＥＴ ）は、大きく次の２つの条件を満足する必要が
ある。<Prior Art> Conventionally, ion implantation methods with excellent controllability and uniformity have been widely used in the formation process of active layers and the like of compound semiconductors. For example, in the case of GaAs, many devices with LSI-scale integration have been developed using ion implantation. These GaAs are expected to have high performance for digital applications.
The field effect transistor (
FET) must satisfy the following two conditions.
■ デバイス内でのしきい値電圧（Ｖｔｈ ）の分散（
）が小さいこと。■ Dispersion of threshold voltage (Vth) within the device (
) is small.
’ｖｔｈ
■ ＦＥＴの伝達コンダクタンス（ｇｍ）が大きいこと
。'vth ■ The transfer conductance (gm) of the FET is large.
これらの条件は多くの製造技術に関係する問題であるが
ここでは能動層の形成という観点からのみの記述とする
。Although these conditions are relevant to many manufacturing techniques, they will be described here only from the perspective of forming the active layer.
イオン注入法は、上記■の点において現在知られている
方法の中では最も優れており、ＧａＡｓ１、 Ｓ Ｉの
製造にも広く用いられている。The ion implantation method is the best among the currently known methods in terms of the above point (2), and is widely used in the production of GaAs1 and SI.
一方、上記■を満足するためには、イオン注入により形
成される不純物濃度プロファイルは、次の条件を満足す
る必要がある。On the other hand, in order to satisfy the above condition (2), the impurity concentration profile formed by ion implantation must satisfy the following conditions.
■ 接合の深さくＸｊ）が浅いこと。■ The depth of the bond (Xj) is shallow.
■ 不純物濃度プロファイルが急峻なこと。■ Impurity concentration profile is steep.
■ 接合の深さＸｊまでに含まれるキャリアの数が多い
こと。■ A large number of carriers are included up to the junction depth Xj.
イオン注入法では、加速エネルギーが大きくなると、投
影飛程Ｒｐ及び飛程分散ΔＲｐが大きくなるため、接合
の深さＸｊけ増加し、グロファイルの急峻性も失われる
。従って、ＧａＡｓ ＦＥＴでは注入エネルギーを低く
することＫより、上記した■及び■の条件を同時に満足
させており、ｎ型導電層の場合、２８Ｓｉ＋や２９３Ｂ
＋を用いて、注入層を形成している。In the ion implantation method, as the acceleration energy increases, the projected range Rp and the range dispersion ΔRp increase, so the junction depth increases by Xj and the steepness of the profile is also lost. Therefore, in GaAs FETs, the above-mentioned conditions (1) and (2) are simultaneously satisfied by lowering the implantation energy, and in the case of an n-type conductive layer, 28Si+
+ is used to form an injection layer.
〈発明が解決しようとする問題点〉
しかしながら上記のような低い加速エネルギーの注入は
、加速エネルギーの変動による変化をうけやすく、接合
の深さＸｊが変化するため、しきい値電圧の分散’ｖｔ
ｈを小さく抑えることが雛しくなる。又、浅い接合深さ
Ｘｊ を形成する際には、一般的にはイオンの注入量が
少くなるため、結晶の損傷があまり起こらず、熱処理に
よる回復がかえって困難になるという問題点もある。<Problems to be Solved by the Invention> However, the implantation of low acceleration energy as described above is susceptible to changes due to fluctuations in acceleration energy, and the junction depth Xj changes, resulting in threshold voltage dispersion 'vt
It becomes easier to keep h small. Furthermore, when forming a shallow junction depth Xj, the amount of ions implanted is generally small, so there is a problem that the crystal is not damaged much, making recovery by heat treatment more difficult.
本発明は上記の点に鑑みて創案されたものであり、上記
の問題点を解決し、浅い接合を均一に形成し得る化合物
半導体へのイオン注入方法を提供することを目的として
いる。The present invention has been devised in view of the above points, and aims to provide a method of ion implantation into a compound semiconductor that can solve the above problems and uniformly form shallow junctions.
く問題点を解決するための手段及び作用〉上記の目的を
達成するため、本発明は化合物半導体の製造工程におい
て、イオン注入によって能動層等を形成するに際し、注
入イオン種として化合物イオン（例えばＧａＡｓの場合
、Ｓ ｉ Ｆ＋、 ＳｉＦ２”等）を用いるようになし
て、浅い接合を均一に形成している。Means and operation for solving the above problems In order to achieve the above object, the present invention uses compound ions (e.g. GaAs) as the implanted ion species when forming active layers etc. by ion implantation in the manufacturing process of compound semiconductors. In this case, shallow junctions are uniformly formed by using SiF+, SiF2'', etc.).
〈実施例〉 以下、本発明の実施例を詳細に説明する。<Example> Examples of the present invention will be described in detail below.
以下の実施例では化合物半導体基板として半絶縁性Ｇａ
Ａｓ基板を用い、ソースガスとしてＳ ｉＦ４を用いる
場合について説明するが、本発明はこれに限定されるも
のではなく、その他の化合物半導体基板や、ソースガス
についても適用可能である。In the following examples, semi-insulating Ga is used as the compound semiconductor substrate.
Although a case will be described in which an As substrate is used and SiF4 is used as the source gas, the present invention is not limited thereto, and can also be applied to other compound semiconductor substrates and source gases.
第１図はＳｉＦ４をソースガスとして用いた場合の、イ
オンビーム質量スペクトルの一例を示す図であり、マグ
ネット電流を調整することにより、容易に４７ＳｉＦ＋
や６６ＳｉＦ２＋のイオンビームを得ることができる。Figure 1 shows an example of the ion beam mass spectrum when SiF4 is used as the source gas.
It is possible to obtain an ion beam of 66SiF2+ or 66SiF2+.
第２図は２ｓＳｉ十及び”ＳｉＦ２＋の投影飛程Ｒｐ及
び飛程分散ΔＲｐを加速電圧に対してプロットしたもの
である。６６ＳｉＦ２＋では、２８５４＋ と比べて同
じＲｐに対するΔＲｐが小さくなっており、形成される
不純物濃度プロファイルが急峻になることが分かる。Figure 2 shows the projected range Rp and range dispersion ΔRp of 2sSi+ and SiF2+ plotted against the accelerating voltage. In 66SiF2+, ΔRp for the same Rp is smaller than in 2854+. It can be seen that the impurity concentration profile becomes steep.
また、加速電圧の変化に対するＲＰ＋ΔＲｐの変化も小
さく、加速電圧の変動によるＸｊの変化も小さくできる
ことが判る。Furthermore, it can be seen that the change in RP+ΔRp with respect to the change in the acceleration voltage is small, and the change in Xj due to the change in the acceleration voltage can also be made small.
さて、ＬＳＳ理論によれば、深さＸにおける不純物濃度
Ｎ （ｘ）は、次式で近似される。Now, according to the LSS theory, the impurity concentration N (x) at the depth X is approximated by the following equation.
ここでＤは注入量と呼ばれる値である。Here, D is a value called the injection amount.
今、２８Ｓ４＋を６０ＫｅＶでＤ＝ ４Ｘ １０１２ｚ
−２注入したとすると、上式及び第２図から、６６Ｓ
ｉＦ２”を１２０ ＫｅＶでＤ＝３×１０１２ｃｒｎ−
２注入すればビーしい能動層を形成することができる。Now, 28S4+ at 60KeV D= 4X 1012z
-2 injection, from the above formula and Figure 2, 66S
iF2” at 120 KeV D=3×1012crn-
A beautiful active layer can be formed by 2 implantations.
半絶縁性ＧａＡｓ基板にそれぞれのイオン注入を行った
後、Ｐ−ＣＶＤＫより形成したシリコン窒化膜を保護膜
とし、８５０’ＣＩ５分の熱処理により注入不純物を活
性化した時のキャリア濃度分布を第３図に示しており、
またホール測定により評価した特性を第１表に示してい
る。After each ion implantation was performed on a semi-insulating GaAs substrate, a silicon nitride film formed by P-CVDK was used as a protective film, and the implanted impurities were activated by heat treatment for 850'CI5 minutes.The third graph shows the carrier concentration distribution. As shown in the figure,
Table 1 also shows the characteristics evaluated by Hall measurements.
第１表
２８３１＋及び”ＳｉＦ２＋で形成した能動層の特性比
較第３図より、”ＳｉＦ２＋を用いて形成した能動層の
方が急峻な分布になっていることが判る。又、第１表よ
り、６６ＳｉＦ２＋の方がドーズ量（注入されるイオン
の量）が少ないにもかかわらず、２８ＳＩ＋とはぼ同等
の能動層が得られていることが判る。From Table 1 2831+ and FIG. 3, which compares the characteristics of the active layer formed using SiF2+, it can be seen that the active layer formed using SiF2+ has a steeper distribution. Furthermore, from Table 1, it can be seen that although 66SiF2+ has a smaller dose (amount of ions implanted), an active layer approximately equivalent to that of 28SI+ is obtained.
〈発明の効果〉
以上詳述した様に、本発明の方法により従来に比べて次
の効果が得られる。<Effects of the Invention> As detailed above, the method of the present invention provides the following effects compared to the conventional method.
■ 化合物イオンを用いて導電層を形成することにより
、従来より急峻な不純物分布が得られる。■ By forming a conductive layer using compound ions, a steeper impurity distribution than before can be obtained.
■ 形成される導電層の深さＸｊは、イオン注入時の加
速電圧の変動の影響をうけにくい。(2) The depth Xj of the conductive layer to be formed is less susceptible to fluctuations in accelerating voltage during ion implantation.
■ イオン注入時に結晶が受ける損傷が大きいため、少
ない注入量でも比較的大きな活性化率が得られる。■ Since the crystal is severely damaged during ion implantation, a relatively large activation rate can be obtained even with a small implantation dose.
第１図はＳｉＦ４ガスによるイオンビーム質量スペクト
ルを示す図、第２図は２８Ｓｉ十及び６６ＳｉＦ２”の
Ｒｐ及びΔＲｐの加速電圧依存性を示す図、第３図は２
８Ｓ！＋及び６６ＳｉＦ２＋で形成した導電層のキャリ
ア濃度プロファイルを示す図である。
代理人 弁理士 杉 山 毅 至（他１名）７７０ ｔ
ｔ ＩＥ （Ｋ＠Ｖ）
＃２ 図Figure 1 shows the ion beam mass spectrum using SiF4 gas, Figure 2 shows the accelerating voltage dependence of Rp and ΔRp of 28Si and 66SiF2'', and Figure 3 shows the acceleration voltage dependence of 28Si and 66SiF2''.
8S! FIG. 3 is a diagram showing carrier concentration profiles of conductive layers formed of + and 66SiF2+. Agent Patent attorney Takeshi Sugiyama (and 1 other person) 770 t
t IE (K@V) #2 Figure
Claims (1)
オン種として化合物イオンを用いることを特徴とする化
合物半導体へのイオン注入方法。 ２、前記化合物半導体はＧａＡｓであり、化合物イオン
としてＳｉＦ＾＋もしくはＳｉＦ＿２＾＋を用いてなる
ことを特徴とする特許請求の範囲第１項記載の化合物半
導体へのイオン注入方法。[Claims] 1. A method for ion implantation into a compound semiconductor, which comprises using compound ions as the implanted ion species when forming an active layer, etc. by ion implantation in a compound semiconductor manufacturing process. 2. The method of ion implantation into a compound semiconductor according to claim 1, wherein the compound semiconductor is GaAs and SiF^+ or SiF_2^+ is used as the compound ion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7924287A JPS63244842A (en) | 1987-03-31 | 1987-03-31 | Ion implantation into compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7924287A JPS63244842A (en) | 1987-03-31 | 1987-03-31 | Ion implantation into compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63244842A true JPS63244842A (en) | 1988-10-12 |
Family
ID=13684387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7924287A Pending JPS63244842A (en) | 1987-03-31 | 1987-03-31 | Ion implantation into compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63244842A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5158897A (en) * | 1990-08-03 | 1992-10-27 | Sharp Kabushiki Kaisha | Method for the production of a semiconductor device by implanting fluorocarbon ions |
-
1987
- 1987-03-31 JP JP7924287A patent/JPS63244842A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5158897A (en) * | 1990-08-03 | 1992-10-27 | Sharp Kabushiki Kaisha | Method for the production of a semiconductor device by implanting fluorocarbon ions |
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