JPS6329935A - Multilayer thin-film structure - Google Patents
Multilayer thin-film structureInfo
- Publication number
- JPS6329935A JPS6329935A JP17448986A JP17448986A JPS6329935A JP S6329935 A JPS6329935 A JP S6329935A JP 17448986 A JP17448986 A JP 17448986A JP 17448986 A JP17448986 A JP 17448986A JP S6329935 A JPS6329935 A JP S6329935A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- alxga1
- xas
- gaas
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 4
- -1 nitrogen ions Chemical class 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000000704 physical effect Effects 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 21
- 150000001875 compounds Chemical class 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 230000006641 stabilisation Effects 0.000 description 5
- 238000011105 stabilization Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はＩＩＩ−Ｖ族化合物半導体による絶縁膜とその
界面現象を利用したデバイスの実現、また、製造プロセ
スの安定化あるいはデバイスの信頼性の向上に繋がる半
導体材料上に形成した多層薄膜の構造に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention is directed to the realization of a device using an insulating film made of a III-V compound semiconductor and its interface phenomenon, and also to the stabilization of a manufacturing process or the reliability of a device. The present invention relates to the structure of a multilayer thin film formed on a semiconductor material that leads to improved performance.
［従来の技術とその問題］
表面の安定化、金属−絶縁体−半導体（）Ｉｅｔａｌ−
Ｉｎｓｕｌａｔｏｒ−３ａｍｉｃｏｎｄｕｃｔｏｒの略
称としてＭＩＳとするのが一般的でおり以後この略称を
用いる）構造トランジスタの実現等に重要な半導体と絶
縁体の接触による界面物性を制御する技術はＩＩＩ−Ｖ
族化合物半導体に対しては成功していない。[Prior art and its problems] Surface stabilization, metal-insulator-semiconductor ()Ietal-
III-V is a technology that controls interface physical properties due to contact between a semiconductor and an insulator, which is important for realizing structural transistors, etc.
No success has been achieved with group compound semiconductors.
たとえば、■−Ｖ族化合物半導体の代表であるガリウム
ヒ素（ＧａＡｓ）を例にとれば大気中に存在する酸素や
水分がＧａＡｓ表面を酸化し、このＧａＡＳ酸化層が後
に付着する絶縁膜との界面に挿入され易く、この界面層
等がＧａＡＳと絶縁膜の界面単位密度を増大ざぜる原因
となる場合がある。For example, if we take gallium arsenide (GaAs), which is a representative of ■-V group compound semiconductors, oxygen and moisture present in the atmosphere oxidize the GaAs surface, and this GaAS oxide layer forms an interface with an insulating film that will be attached later. This interfacial layer etc. may cause an increase in the interfacial unit density between GaAS and the insulating film.
絶縁膜として通常用いられるＳｉｏ２膜は３ｉに対して
は８１表面のダングリング・ボンド（不対結合子）を閉
じる効果を有し、このダングリング・ボンドによる表面
単位密度を１０１０ｃｍ−２台にできることが実験的に
も示されており、理論的にも予想されている。しかし、
（３ａ、Ａ、ｓ等のＩ−Ｖ族化合物半導体に対しては表
面ダングリング・ボンドを閉じるような絶縁膜として何
がおるのか、現在模索段階にあるが、すでに絶縁膜とし
て良く知られているＳ ： ０２ 、Ｓ ！３ Ｈ４、
Ａｆ２０３等に代って、Ｉ［ｌ−Ｖ族化合物絶縁膜を適
用する以外、ＭＩＳトランジスタや表面安定化を実現す
る道はないのではないかと考えられている。例えばジボ
ラン（８２Ｈ６）とアンモニア（ＮＨ３）から気相堆積
法（以後、ＣＶＤ法と略称する〉で作られる■−Ｖ族化
合物半導体である窒化ポロン（ＢＮ）膜がインジウムリ
ン（ＩｎＰ）の絶縁膜に適用され、１０１０ｃｍ−２台
の低い界面準位密度が得られている。また窒化アルミニ
ウム（ＡＪＮ＞やアルミニウムガリウムヒ素（ＡｌｘＧ
ａＡｓ）等がＭＩＳ構造用の絶縁膜として分子線エピタ
キシャル成長法で形成されるなど■−Ｖ族化合物絶縁膜
の検討が進んでいる。The Sio2 film, which is commonly used as an insulating film, has the effect of closing dangling bonds (unpaired bonds) on the 81 surface for 3i, and the surface unit density due to these dangling bonds can be on the order of 1010 cm-2. has been shown experimentally and is predicted theoretically. but,
(For I-V group compound semiconductors such as 3a, A, and s, we are currently at the stage of searching for an insulating film that closes the surface dangling bonds, but there are already well-known insulating films. S: 02, S!3 H4,
It is thought that there is no way to realize MIS transistors or surface stabilization other than applying an I[l-V group compound insulating film instead of Af203 or the like. For example, a poron nitride (BN) film, which is a ■-V group compound semiconductor, made from diborane (82H6) and ammonia (NH3) by a vapor phase deposition method (hereinafter abbreviated as CVD method) is an insulating film made of indium phosphide (InP). It has been applied to aluminum nitride (AJN>) and aluminum gallium arsenide (AlxG
Studies are progressing on ①-V group compound insulating films, such as aAs), which are formed by molecular beam epitaxial growth as insulating films for MIS structures.
すなわち、Ｉ−Ｖ族化合物半導体上にその禁制帯幅より
広い禁制帯幅を持ったＩ［Ｉ−Ｖ族化合物絶縁膜を形成
し、ＭＩＳトランジスタや表面安定化膜へ適用しようと
いう動きが強まっている。しかし、上記のような製造等
によるＢＮやＡ４２Ｎ膜等では薄膜合成時に合成苗内に
残留している酸素を膜中に取込みやすく、これが絶縁膜
内に深い準位や、また界面単位を形成する要因となって
いる様子であり、このためＭＩＳ特性や界面準位密度等
を必ずしも制御出来ていない。In other words, there is a growing movement to form an I-V group compound insulating film with a wider bandgap than that of the I-V group compound semiconductor and apply it to MIS transistors and surface stabilization films. There is. However, in the case of BN or A42N films manufactured as described above, oxygen remaining in the synthetic seedlings is easily incorporated into the film during thin film synthesis, and this forms deep levels or interface units within the insulating film. This seems to be a factor, and for this reason, MIS characteristics, interface state density, etc. cannot necessarily be controlled.
また、Ａ６ＮやＧａＮはＧａＡｓ等と同じ■−Ｖ族化合
物半導体群ではあるが、安定な結晶構造はウルツ構造で
あり、ＧａＡＳやＩｎＰ等のせん亜鉛鉱とは異なるため
、厚さ１００人程度以上の薄膜をＧａＡＳ等の上に形成
すると均質な薄膜状には形成しにくいという問題がある
。Also, A6N and GaN belong to the ■-V group compound semiconductor group like GaAs, etc., but their stable crystal structure is the Wurtz structure, which is different from the zincite such as GaAS and InP, so the thickness is about 100 mm or more. When forming a thin film on GaAS or the like, there is a problem that it is difficult to form a homogeneous thin film.
本発明の目的はＧａＡｓ等のＩＩＩ−Ｖ族化合物半導体
上に絶縁膜を形成した構造であって、界面準位低減およ
び界面物性を制御することのできる構造を与えることに
ある。An object of the present invention is to provide a structure in which an insulating film is formed on a III-V compound semiconductor such as GaAs, which can reduce interface states and control interface physical properties.
［問題点を解決するための手段］
すなわち本発明はＧａＡｓの上にＡｈ
Ｇ ａ １−ｘ Ａ Ｓ （Ｘは０．１＜ｘ≦１を示す
）層、さらにその上にＮを１×１０２°ｃｍ−２以上導
入したＡ Ｉ！ Ｇ ａ １−Ｘ Ａ Ｓ Ｎ （ｘ
は０．１＜ｘ≦１を示′ｇ）層を有することを特徴とす
る多層薄膜構造でおる。[Means for Solving the Problems] That is, the present invention includes a layer of Ah Ga 1-x AS (X represents 0.1<x≦1) on GaAs, and a layer of N of 1×102 on top of the layer. AI that introduced more than °cm-2! G a 1-X A S N (x
It is a multilayer thin film structure characterized by having 0.1<x≦1 and g) layers.
［実施例］ 以下、この発明を実施例に基づき詳細に説明する。[Example] Hereinafter, this invention will be explained in detail based on examples.
第１図（ａ）は本発明の多層薄膜ウェーハの模式的断面
図である。まずＧａＡＳ基板１１の表面に電子濃度ｌＸ
１０１６ｃｍ−３のＧａＡｓ層１２を厚さ１〜２Ｊｍ、
続いて不純物添加することなしにＡＪ２ｘＧａ、、 Ａ
Ｓ （ｘ ＝ ０．３）層１３を１００ＯＡの厚さで周
知の有機金属熱分解エピタキシャル法（ＭＯＣＶＤ法）
により形成した。この発明の顕著な効果の一つは（３ａ
Ａｓ＠１２とＡＮｘＧａ、−、Ａ５（Ｘ＝ ０．３）層
１３のなす界面１４の特性改良に起因するものでおる。FIG. 1(a) is a schematic cross-sectional view of a multilayer thin film wafer of the present invention. First, the electron concentration lX on the surface of the GaAS substrate 11
The GaAs layer 12 of 1016 cm-3 has a thickness of 1 to 2 Jm,
Subsequently, AJ2xGa,,A without adding any impurities
The S (x = 0.3) layer 13 was formed to a thickness of 100 OA using the well-known metal organic pyrolysis epitaxial method (MOCVD method).
It was formed by One of the remarkable effects of this invention is (3a
This is due to the improvement in the characteristics of the interface 14 formed between the As@12 and AN x Ga, -, A5 (X = 0.3) layers 13.
なお、用いた基板温度は６５０°Ｃでおり、■族のＧａ
およびＡＪ２原料にはトリメチルガリウム（ＴＭＧ）ｅ
よびトリメチルアルミニウム（ＴＭＡ＞を用い、■族の
ＡＳ原料にはアルシン（ＡｓＨ３＞を用いた。この後、
ＡβｘＧａ１−ｘ△Ｓ （Ｘ ＝ ０．３）層１３の表
面より窒素のイオン注入を行った。イオン注入原料には
窒素ガスを用い、加速電圧８０ＫｅＶで行った。イオン
注入量は３×１０２１ｃｍ−２とした。その後、６００
’Ｃでの熱処理を加えることにより、Ａｆ！ｘＧａｉ
、ＡＳ （Ｘ ＝０．３）層１３の表面より約８５０人
が△Ｉ Ｇａ、−。The substrate temperature used was 650°C, and the substrate temperature was 650°C.
and AJ2 raw material is trimethyl gallium (TMG).
and trimethylaluminum (TMA>), and arsine (AsH3>) was used as the AS raw material of group (2).After this,
Nitrogen ions were implanted from the surface of the AβxGa1-xΔS (X = 0.3) layer 13. Nitrogen gas was used as the raw material for ion implantation, and the acceleration voltage was 80 KeV. The amount of ion implantation was 3×10 21 cm −2 . After that, 600
By adding heat treatment at 'C, Af! xGai
, AS (X = 0.3) From the surface of the layer 13, about 850 people are ΔI Ga, -.
ＡＳＮ層であるアモルファス状高抵抗化領域１５となり
、１０１１Ωｃｍ以上の高い抵抗率となった。注入量は
３×１０２１ｃｍ−２を実現するには多大な時間を要す
るため、第１図（ｂ）に示すようにＭＩＳダイオード特
性を評価する領域についてのみイオン注入を選択的に行
った。アモルファス状となった領域１５については窒素
のイオン注入量を１×１０２０ｃｍ−２以上にすると再
現性よ＜１０１１Ωｃｍ以上の高い抵抗率が得られた。The resulting amorphous high-resistivity region 15, which is an ASN layer, had a high resistivity of 10 11 Ωcm or more. Since it takes a long time to achieve an implantation amount of 3.times.10.sup.21 cm.sup.-2, ions were selectively implanted only in the region where the MIS diode characteristics were to be evaluated, as shown in FIG. 1(b). Regarding the amorphous region 15, when the nitrogen ion implantation amount was set to 1×10 20 cm −2 or more, a high resistivity with reproducibility of <10 11 Ωcm or more was obtained.
また、この窒素イオン注入によるアモルファス状高抵抗
化領ｂｉ １５を得るには窒素の体積濃度は５ Ｘ ’
ｌ０１９ｃｍ−３以上で得られることが分った。In addition, in order to obtain the amorphous high resistance region bi15 by this nitrogen ion implantation, the volume concentration of nitrogen must be 5X'
It was found that it could be obtained at 1019 cm-3 or more.
次にこのようなＧａＡＳ層１２層上２△β８Ｇａｉ−ｘ
Ａｓ （ｘ ＝ ０．３）層１３に窒素イオン注入ア
モルファス状高抵抗化領ＩＯ，１５を形成したものを絶
縁膜とし、この表面に５００μｓφの直径で金属（実施
例ではアルミニウム）を蒸着してＭＩＳダイオードを試
作し、この電圧（Ｖ）−容量（Ｃ）特性を評価したとこ
ろいわゆるヒステリシスは示さす、界面準位密度も１０
１０ｃｍ−２Ｖ −１台の低い値が再瑛性よく得られた
。また、この特性は窒素イオン注入によるアモルファス
状高抵抗化領域１５の厚ざを８００人から９８０Ａの間
で変えた実験においてはほとんど変化することなく、良
好な特性を示した。Next, 2Δβ8Gai-x on 12 such GaAS layers
An insulating film is formed by forming a nitrogen ion-implanted amorphous high resistance region IO, 15 on the As (x = 0.3) layer 13, and a metal (aluminum in the example) is deposited on the surface with a diameter of 500 μsφ. When we prototyped a MIS diode and evaluated its voltage (V)-capacitance (C) characteristics, it showed so-called hysteresis, and the interface state density was also 10.
A low value of 10cm-2V-1 was obtained with good re-eating performance. Further, in an experiment in which the thickness of the amorphous high-resistance region 15 formed by nitrogen ion implantation was varied from 800 to 980 amps, this characteristic hardly changed and showed good characteristics.
次に、この多層薄膜ウェーハを表面安定化膜として使用
した例を示す。Next, an example will be shown in which this multilayer thin film wafer is used as a surface stabilizing film.
第２図にその模式的断面図を示すように、ＧａＡＳ電解
効果トランジスタ（Ｆｉｅｌｄ−Ｅｆｆｅｃｔ−Ｔｒａ
ｎｓｉｓｔｏｒ ： Ｆ Ｅ Ｔ ）のソース３１とゲ
ート３２、およびドレイン３３とゲート３２の間のＧａ
ＡＳ表面３４を本発明の膜構造で被覆したところ、Ｇａ
ＡＳＦＥＴで問題視されている動作時の電流の短期的、
長期的変化、すなわちドリフトはほとんどなくなった。As shown in FIG. 2, a schematic cross-sectional view of the GaAS field-effect transistor
nsistor: FET) between the source 31 and gate 32 and the drain 33 and gate 32
When the AS surface 34 was coated with the film structure of the present invention, Ga
Short-term current during operation, which is considered a problem with ASFET,
Long-term changes, or drift, have almost disappeared.
この場合にはＡｊ２ Ｇａ１−ｘＡＳ （Ｘ ＝×
０．３）層１３の厚さに関する制限は実質的になく、か
つアモルファス状高抵抗化領域１５の厚さについてもｌ
！ｘＧａ１−ｘ ＡＳ （Ｘ ＝ ０．３）層１３の表
面よりＧａＡｓ層１２とＡ ｊ２ Ｇ ａ １−ｘ
Ａ Ｓ （Ｘ −０，３）層１３のなす界面１４から５
００人以上離してもドリフトはほと／υどなかった。In this case, there is virtually no restriction on the thickness of the Aj2Ga1-xAS (X = x 0.3) layer 13, and there is also no restriction on the thickness of the amorphous high resistance region 15.
! xGa1-x AS (X = 0.3) From the surface of the layer 13, the GaAs layer 12 and A j2 Ga 1-x
5 from the interface 14 formed by the A S (X −0,3) layer 13
Even with more than 00 people separated, there was almost no drift.
一方、Ａ Ｉ！ Ｇ ａ ｂｘ Ａ Ｓ （Ｘ ＝０
．３）層１３の組成Ｘは０．１＜ｘ≦１であるが、特に
０．２以上において、良好なＭＩＳダイオード特性と表
面安定化効果が得られた。On the other hand, AI! G a bx A S (X = 0
．． 3) Although the composition X of the layer 13 satisfies 0.1<x≦1, particularly when it is 0.2 or more, good MIS diode characteristics and surface stabilization effects were obtained.
以上、本実施例ではＡ Ｉ！Ｇ ａ １−ｘ Ａ Ｓ
（Ｘ ＞×
０．２）層１３をＭＯＣＶＤ法で形成したが、他の形成
法で必ってもよい。また、窒素イオン注入によるアモル
ファス状高抵抗化領域１５に代って、Ａｊ、 Ｇａ１−
ｘ ＡＳ （０，１＜ｘ≦１）層１３をアンモニア（Ｎ
Ｈ３）やヒドラジン（Ｎ２町）の雰囲気中で加熱処理し
窒化することでも同様な高抵抗化領域１５を得ることが
できる。As mentioned above, in this example, AI! G a 1-x A S
(X>×0.2) Although the layer 13 is formed by MOCVD, it may be formed by other methods. In addition, instead of the amorphous high resistance region 15 formed by nitrogen ion implantation, Aj, Ga1-
x AS (0,1<x≦1) The layer 13 is made of ammonia (N
A similar high resistance region 15 can also be obtained by heat treatment and nitriding in an atmosphere of H3) or hydrazine (N2 town).
第１図は本発明の多層薄膜構造を有するウェーハの模式
的断面図、第２図はそれをＧａＡｓＦＥ下に適用した場
合のＦＥＴの模式的断面図でおる。
１１−Ｇ ａ Ａ ｓ基板 １２−Ｇ ａ Ａ ｓ
層１３−Ａ Ｉ！ｘＧａＦｘＡ ｓ層
１４・・・界面
１５・・・アモルファス状高抵抗化領域３１・・・ソー
ス ３２・・・ゲート３３・・・ドレイン
３４・・・ＧａＡｓ表面第１図FIG. 1 is a schematic cross-sectional view of a wafer having a multilayer thin film structure according to the present invention, and FIG. 2 is a schematic cross-sectional view of an FET in which the wafer is applied under GaAsFE. 11-GaAs substrate 12-GaAs
Layer 13-AI! xGaFxA s layer 14...interface 15...amorphous high resistance region 31...source 32...gate 33...drain
34...GaAs surface Figure 1
Claims (1)
ｘは０．１＜ｘ≦１を示す）層、さらにその上にＮを１
×１０＾２＾０ｃｍ＾−＾２以上導入したＡｌ＿ｘＧａ
＿１＿−＿ｘＡｓＮ（ｘは０．１＜ｘ≦１を示す）層を
有することを特徴とする多層薄膜構造。(1) Al_xGa_1_-_xAs(
x indicates 0.1<x≦1) layer, and furthermore, 1 layer of N is added on top of it.
×10^2^0cm^-^2 or more introduced Al_xGa
A multilayer thin film structure comprising a _1_-_xAsN (x represents 0.1<x≦1) layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17448986A JPH0666341B2 (en) | 1986-07-23 | 1986-07-23 | Multi-layer thin film structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17448986A JPH0666341B2 (en) | 1986-07-23 | 1986-07-23 | Multi-layer thin film structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6329935A true JPS6329935A (en) | 1988-02-08 |
| JPH0666341B2 JPH0666341B2 (en) | 1994-08-24 |
Family
ID=15979378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17448986A Expired - Lifetime JPH0666341B2 (en) | 1986-07-23 | 1986-07-23 | Multi-layer thin film structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0666341B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04111425A (en) * | 1990-08-31 | 1992-04-13 | Fujitsu Ltd | Manufacture of semiconductor device |
| US6441548B1 (en) | 2000-02-18 | 2002-08-27 | Mitsubishi Denki Kabushiki Kaisha | Discharging and light emitting device |
| US6674061B1 (en) | 2000-02-18 | 2004-01-06 | Mitsubishi Denki Kabushiki Kaisha | Contact image sensor unit |
-
1986
- 1986-07-23 JP JP17448986A patent/JPH0666341B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04111425A (en) * | 1990-08-31 | 1992-04-13 | Fujitsu Ltd | Manufacture of semiconductor device |
| US6441548B1 (en) | 2000-02-18 | 2002-08-27 | Mitsubishi Denki Kabushiki Kaisha | Discharging and light emitting device |
| US6674061B1 (en) | 2000-02-18 | 2004-01-06 | Mitsubishi Denki Kabushiki Kaisha | Contact image sensor unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0666341B2 (en) | 1994-08-24 |
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