JPS6324276U - - Google Patents
Info
- Publication number
- JPS6324276U JPS6324276U JP11742286U JP11742286U JPS6324276U JP S6324276 U JPS6324276 U JP S6324276U JP 11742286 U JP11742286 U JP 11742286U JP 11742286 U JP11742286 U JP 11742286U JP S6324276 U JPS6324276 U JP S6324276U
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- phase growth
- nozzle
- etching
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims description 10
- 238000001947 vapour-phase growth Methods 0.000 claims description 9
- 230000037431 insertion Effects 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 241000973497 Siphonognathus argyrophanes Species 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11742286U JPH0345956Y2 (enrdf_load_stackoverflow) | 1986-08-01 | 1986-08-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11742286U JPH0345956Y2 (enrdf_load_stackoverflow) | 1986-08-01 | 1986-08-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6324276U true JPS6324276U (enrdf_load_stackoverflow) | 1988-02-17 |
| JPH0345956Y2 JPH0345956Y2 (enrdf_load_stackoverflow) | 1991-09-27 |
Family
ID=31002918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11742286U Expired JPH0345956Y2 (enrdf_load_stackoverflow) | 1986-08-01 | 1986-08-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0345956Y2 (enrdf_load_stackoverflow) |
-
1986
- 1986-08-01 JP JP11742286U patent/JPH0345956Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0345956Y2 (enrdf_load_stackoverflow) | 1991-09-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6324276U (enrdf_load_stackoverflow) | ||
| JPS592374B2 (ja) | プラズマ気相成長装置 | |
| JPH0936053A (ja) | 半導体の製造方法 | |
| JPS6473717A (en) | Selective deposition of metal | |
| JPS5821826A (ja) | 半導体製造装置の堆積物除去方法 | |
| JPH0447955Y2 (enrdf_load_stackoverflow) | ||
| JP2681469B2 (ja) | 半導体基板のエピタキシャル成長方法 | |
| KR100639517B1 (ko) | 확산기를 구비한 ｃｖｄ 장비 | |
| JPH0662534U (ja) | 化学気相成長装置 | |
| JP2792886B2 (ja) | 化学気相成長装置 | |
| JPH0530350Y2 (enrdf_load_stackoverflow) | ||
| JP2500421Y2 (ja) | 低圧化学気相生成装置 | |
| JPH0897154A (ja) | 真空成膜装置 | |
| JPH04320025A (ja) | 化学気相成長装置 | |
| JPS62115708A (ja) | 処理装置 | |
| JPS6254081A (ja) | 気相成長装置 | |
| JPH02146165U (enrdf_load_stackoverflow) | ||
| JPS62148574U (enrdf_load_stackoverflow) | ||
| JPS632435Y2 (enrdf_load_stackoverflow) | ||
| JPH03262123A (ja) | 半導体デバイス製造装置 | |
| JPH05251360A (ja) | 膜形成装置 | |
| JP2514359Y2 (ja) | サセプタ浄化用真空ベ―キング装置 | |
| JPH1027758A (ja) | 気相成長装置及び半導体ウエハの気相成長方法 | |
| JPS60117737A (ja) | プラズマｃｖｄ装置 | |
| JPH1187249A (ja) | 半導体ウェーハ処理装置 |