JPS6473717A - Selective deposition of metal - Google Patents
Selective deposition of metalInfo
- Publication number
- JPS6473717A JPS6473717A JP23131287A JP23131287A JPS6473717A JP S6473717 A JPS6473717 A JP S6473717A JP 23131287 A JP23131287 A JP 23131287A JP 23131287 A JP23131287 A JP 23131287A JP S6473717 A JPS6473717 A JP S6473717A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- metal
- contact hole
- thermal reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To selectively deposit an excellent metal in a contact hole while eliminating any abnormal deposition and nucleus growing of W by a method wherein the inside of a contact hole and the surface of an insulating film are cleaned up by decomposing etching gas by optical or thermal reaction immediately before or during a deposition process of a metal on a semiconductor substrate. CONSTITUTION:After depositing SiO2 on an Si substrate 1, a sample with a contact hole made therein is led into a reaction chamber and then once vacuumizing the chamber, the sample is cleaned up 5 by thermal reaction of ClF3 gas to remove the foreign matters 4 in the hole 3. First, a W film 6 is deposited by reducing reaction of WF2 gas to form W nuclei 7. Second, the W nuclei 7 are removed by the cleaning up process by the thermal reaction of ClF3 gas again. Finally, a thick W film 9 is deposited by H2 reduction of WF6 gas to fill up the hole 3 with a thick W film 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23131287A JPS6473717A (en) | 1987-09-16 | 1987-09-16 | Selective deposition of metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23131287A JPS6473717A (en) | 1987-09-16 | 1987-09-16 | Selective deposition of metal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6473717A true JPS6473717A (en) | 1989-03-20 |
Family
ID=16921657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23131287A Pending JPS6473717A (en) | 1987-09-16 | 1987-09-16 | Selective deposition of metal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6473717A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01201938A (en) * | 1988-02-05 | 1989-08-14 | Fujitsu Ltd | Formation of multilayer electrode wiring layer in semiconductor device |
| JPH01319679A (en) * | 1988-06-08 | 1989-12-25 | L'air Liquide | Improved selective cvd adapted to production process of semiconductive device |
| JPH03138931A (en) * | 1989-10-24 | 1991-06-13 | Tokyo Electron Ltd | Film forming method |
| KR20010046339A (en) * | 1999-11-12 | 2001-06-15 | 박종섭 | A method for forming metal contact for improving contact resistance in semiconductor device |
| KR100369354B1 (en) * | 1999-06-30 | 2003-01-24 | 주식회사 하이닉스반도체 | Method for reducing contact resistance by using low energy dry cleaning and rapid thermal annealing |
| US6943109B2 (en) | 2002-10-11 | 2005-09-13 | Oki Electric Industrial Co., Ltd. | Method of manufacturing a semiconductor element |
-
1987
- 1987-09-16 JP JP23131287A patent/JPS6473717A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01201938A (en) * | 1988-02-05 | 1989-08-14 | Fujitsu Ltd | Formation of multilayer electrode wiring layer in semiconductor device |
| JPH01319679A (en) * | 1988-06-08 | 1989-12-25 | L'air Liquide | Improved selective cvd adapted to production process of semiconductive device |
| JPH03138931A (en) * | 1989-10-24 | 1991-06-13 | Tokyo Electron Ltd | Film forming method |
| KR100369354B1 (en) * | 1999-06-30 | 2003-01-24 | 주식회사 하이닉스반도체 | Method for reducing contact resistance by using low energy dry cleaning and rapid thermal annealing |
| KR20010046339A (en) * | 1999-11-12 | 2001-06-15 | 박종섭 | A method for forming metal contact for improving contact resistance in semiconductor device |
| US6943109B2 (en) | 2002-10-11 | 2005-09-13 | Oki Electric Industrial Co., Ltd. | Method of manufacturing a semiconductor element |
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