JPS62291918A - Selective deposition of metal - Google Patents
Selective deposition of metalInfo
- Publication number
- JPS62291918A JPS62291918A JP13652286A JP13652286A JPS62291918A JP S62291918 A JPS62291918 A JP S62291918A JP 13652286 A JP13652286 A JP 13652286A JP 13652286 A JP13652286 A JP 13652286A JP S62291918 A JPS62291918 A JP S62291918A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- deposited
- contact hole
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 13
- 230000008021 deposition Effects 0.000 title description 5
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 11
- 238000001465 metallisation Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 230000002159 abnormal effect Effects 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
産業上の利用分野
本発明は半導体基板上への金属の選択堆積法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION 3. DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for selectively depositing metal onto a semiconductor substrate.
従来の技術
第２図に示すのは、従来の半導体基板上への金属の選択
堆積法の一例である。図中９はＳｉ基板、１０は熱酸化
膜、１１はコンタクトホール、１２はコンタクトホール
内の自然酸化膜、１３は減圧ＣＶＤ法でＷを堆積した後
のコンタクトホールである。Ｓｉ基板９上に形成した厚
さ約１／１ｍの熱酸化膜１ｏに直径約１μｍのコンタク
トホール１１を開孔した後に、減圧ＣＶＤ法によるＷＦ
６ガスとＨ２ガスの反応を用いて選択的にコンタクトホ
ール内にＷ膜を堆積することができる。BACKGROUND OF THE INVENTION FIG. 2 shows an example of a conventional method for selectively depositing metal on a semiconductor substrate. In the figure, 9 is a Si substrate, 10 is a thermal oxide film, 11 is a contact hole, 12 is a natural oxide film in the contact hole, and 13 is a contact hole after W has been deposited by low pressure CVD method. After opening a contact hole 11 with a diameter of about 1 μm in a thermal oxide film 1o with a thickness of about 1/1 m formed on a Si substrate 9, WF is formed by low pressure CVD.
The W film can be selectively deposited in the contact hole using the reaction between 6 gas and H2 gas.
発明が解決しようとする問題点
しかし、このような従来のＷの選択堆積法では、コンタ
クトホール内慕自然酸化膜１２を除去せずに堆積を行っ
た場合、第２図すに示すようにコンタクトホール内のＳ
ｉが異常にエツチングされ、Ｗがほとんど堆積しないか
あるいは不規則にＷが堆積してしまうという現象が起こ
り、プロセス上大きな問題となっていた。Problems to be Solved by the Invention However, in such a conventional selective deposition method of W, if the deposition is performed without removing the native oxide film 12 inside the contact hole, the contact hole will be removed as shown in FIG. S in the hall
A phenomenon occurs in which i is abnormally etched, and W is hardly deposited or W is deposited irregularly, which poses a major problem in the process.
また自然酸化膜を金属の堆積と同一チャンバー内でプラ
ズマクリーニングする方法も考えられているが、熱酸化
膜の表面にプラズマダメージが入り熱酸化膜上にもＷが
堆積してしまうという欠点があった。A method of plasma cleaning the natural oxide film in the same chamber as the metal deposition has also been considered, but this method has the disadvantage that plasma damage may occur on the surface of the thermal oxide film and W may also be deposited on the thermal oxide film. Ta.
本発明はかかる点に２みてなされたもので、簡易な構成
でＳｉの異常エツチングの起こらない、良好なＷの選択
堆積法を提供することを目的としている。The present invention has been made in view of these points, and an object of the present invention is to provide a method for selectively depositing W that has a simple structure and does not cause abnormal etching of Si.
問題点を解決するための手段
本発明は上記問題点を解決するため、ＣＶＤ法による基
板表面への金属の選択堆積に際し、金属を堆積する反応
室と同一反応室内で前記基板表面を光エッチングを用い
てクリーニングすることによって、Ｓｉの異常エツチン
グの起こらない良好なＷの選択堆積法を提供するもので
ある。Means for Solving the Problems The present invention solves the above problems by photo-etching the substrate surface in the same reaction chamber as the one in which the metal is deposited when selectively depositing metal on the substrate surface by the CVD method. The present invention provides an excellent selective deposition method for W that does not cause abnormal etching of Si by cleaning using the wafer.
作用
本発明は上記した構成により、金属の堆積を行う直前に
コンタクトホール内の自然酸化膜が除去されるため、コ
ンタクトホール内のＳｉが異常にエツチングされる心配
が無い。Operation According to the present invention, with the above-described structure, the natural oxide film in the contact hole is removed immediately before metal deposition, so there is no fear that the Si in the contact hole will be abnormally etched.
実施例 第１図は本発明の金属の選択堆積法の一実施例である。Example FIG. 1 shows an embodiment of the selective metal deposition method of the present invention.
図中１は半導体Ｓｉ基板、２は厚さ約１μｍの熱酸化膜
、３はコンタクトホール、４はコンタクトホール内の自
然酸化膜、６はＨｇランプ光、６はＩＦ、等のエツチン
グガス、７及び８は厚さ約５０００人のＷ膜である。In the figure, 1 is a semiconductor Si substrate, 2 is a thermal oxide film with a thickness of about 1 μm, 3 is a contact hole, 4 is a natural oxide film in the contact hole, 6 is Hg lamp light, 6 is an etching gas such as IF, 7 and 8 is a W film with a thickness of approximately 5000 mm.
第１図＆のように作製した試料を光エッチングのできる
チャンバーに入れ、第１図すに示すように、Ｈｇ ラン
プ光５を照射しながらエツチングガス６（例えばＩＦ、
等）を流す。この光エッチングによってコンタクトホー
ル内の自然酸化膜４が除去され、第１図Ｃの様な状態と
なる。この試料をチャンバーから出さずにＷＦ６ガス及
びＨ２ガスを用いてＷの選択堆積を行うと、第１図ｄの
様に、選択性の良好な約５ｏｏｏ人のＷ膜７の堆積を行
うことができる。The sample prepared as shown in FIG.
etc.). This photo-etching removes the natural oxide film 4 within the contact hole, resulting in a state as shown in FIG. 1C. If W is selectively deposited using WF6 gas and H2 gas without taking this sample out of the chamber, it is possible to deposit approximately 500 W film 7 with good selectivity, as shown in FIG. 1d. can.
更に厚くＷ膜を堆積したい場合には第１図ｅに示すよう
に再び光エッチングを行い、熱酸化膜２上のＷの核を除
去した後、再びＷＦ６ガス及びＨ２ガスを用いてＷの選
択堆積を行うと、第１図ｆに示す様に約５ｏｏｏ人のＷ
膜８の堆積を行うことができ、トータルのＷ膜厚は１μ
ｍとなる。またこのエツチングと堆積の２つの工程を交
互てくり返すことにより、更に厚いＷ膜の堆積も可能で
ある。If it is desired to deposit an even thicker W film, photo-etching is performed again as shown in FIG. When the deposition is carried out, about 500 people's W is deposited as shown in Figure 1 f.
Film 8 can be deposited, and the total W film thickness is 1 μm.
m. Further, by repeating the two steps of etching and deposition alternately, it is possible to deposit an even thicker W film.
なお、本実施例においては基板としてＳｉ基板を用い、
直接Ｓｉ表面へのＷの選択堆積を行ったが、Ｓｉ表面以
外の表面、例えばＴ１やＡＪ又はＷ等の金属が露出した
表面であっても同様な効果が得られる。また絶縁膜とし
て熱酸化膜を用いたが、ＰＳＧ膜、ＨＴＩ）膜、 ５ｘ
ｓＮａ膜等ノ他ノ絶縁膜を用いても同様の効果が得られ
る。また基板材料として例えばＧδ１人Ｓ等のＳｉ以外
の材料を用いても良いことはもちろんである。Note that in this example, a Si substrate is used as the substrate,
Although W was selectively deposited directly on the Si surface, similar effects can be obtained on surfaces other than the Si surface, for example, on surfaces where metals such as T1, AJ, or W are exposed. In addition, a thermal oxide film was used as the insulating film, but PSG film, HTI) film, 5x
Similar effects can be obtained by using other insulating films such as sNa film. It goes without saying that materials other than Si, such as Gδ1S, may be used as the substrate material.
更に本実施例においては光源としてＨｇランプを用いた
が、レーザ光を用いることも可能である。Furthermore, although an Hg lamp was used as a light source in this embodiment, it is also possible to use a laser beam.
本実施例では光によるエツチングを用いたが、プラズマ
やスパッタを用いる方法では熱酸化膜２上にダメージが
加わり、Ｗの核の成長を促進してしまうので適当ではな
い。In this embodiment, optical etching is used, but methods using plasma or sputtering are not suitable because they damage the thermal oxide film 2 and promote the growth of W nuclei.
更に光によってコンタクトホールをクリーニングするこ
とにより、良好なコンタクト抵抗を安定して得ることが
できる。Furthermore, by cleaning the contact hole with light, good contact resistance can be stably obtained.
発明の効果
以上述べてきたように本発明によれば、きわめて簡易な
構成で非常に良好な金属の選択堆積を行うことができ、
実用上極めて有用である。Effects of the Invention As described above, according to the present invention, very good selective deposition of metal can be performed with an extremely simple configuration.
It is extremely useful in practice.
第１図は本発明の一実施例におけるＷの選択堆積法を示
す工程断面図、第２図は従来のＷの選択堆積法を示す工
程断面図である。
１・・・・・・Ｓｉ基板、２・・・・・・熱酸化膜、３
・・・・・・コンタクトホール、４・・・・・・自然酸
化膜、６・・・・・・Ｈｇランプ光、６・・・・・・エ
ツチングガス、７．８・・・・・・Ｗ膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
Ｕ））
第１図
（Ｃ）
（ｃｉ’）
第１図
（ｅ）
（ヂ）
第２図
（α〕
（ｂ）FIG. 1 is a process cross-sectional view showing a W selective deposition method according to an embodiment of the present invention, and FIG. 2 is a process cross-sectional view showing a conventional W selective deposition method. 1... Si substrate, 2... Thermal oxide film, 3
...Contact hole, 4...Natural oxide film, 6...Hg lamp light, 6...Etching gas, 7.8... W membrane. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure U)) Figure 1 (C) (ci') Figure 1 (e) (ji) Figure 2 (α) (b)
Claims (2)
し、前記基板表面に絶縁膜を堆積した後、前記絶縁膜を
エッチングして前記半導体基板表面に達するコンタクト
ホールを形成する工程と、前記絶縁膜表面及び前記コン
タクトホール内を光を用いてエッチングする工程と、前
記エッチングの後に、前記コンタクトホール内に金属を
堆積する工程とを有してなる金属の選択堆積法。(1) When selectively depositing metal on the surface of a substrate by CVD, a step of depositing an insulating film on the surface of the substrate and then etching the insulating film to form a contact hole reaching the surface of the semiconductor substrate; A selective metal deposition method comprising the steps of: etching a film surface and the inside of the contact hole using light; and depositing metal inside the contact hole after the etching.
ール内を光を用いてエッチングする工程と、前記エッチ
ングの後に前記コンタクトホール内に金属を堆積する工
程とを交互に行う特許請求の範囲第１項記載の金属の選
択堆積法。(2) The step of etching the insulating film surface and the inside of the contact hole again using light after the metal is deposited, and the step of depositing the metal inside the contact hole after the etching are performed alternately. Selective deposition method of metals as described in Section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13652286A JPS62291918A (en) | 1986-06-12 | 1986-06-12 | Selective deposition of metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13652286A JPS62291918A (en) | 1986-06-12 | 1986-06-12 | Selective deposition of metal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62291918A true JPS62291918A (en) | 1987-12-18 |
Family
ID=15177145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13652286A Pending JPS62291918A (en) | 1986-06-12 | 1986-06-12 | Selective deposition of metal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62291918A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02187021A (en) * | 1989-01-13 | 1990-07-23 | Sharp Corp | Manufacture of semiconductor device |
| JPH02268425A (en) * | 1989-04-10 | 1990-11-02 | Toshiba Corp | Manufacture of semiconductor device |
-
1986
- 1986-06-12 JP JP13652286A patent/JPS62291918A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02187021A (en) * | 1989-01-13 | 1990-07-23 | Sharp Corp | Manufacture of semiconductor device |
| JPH02268425A (en) * | 1989-04-10 | 1990-11-02 | Toshiba Corp | Manufacture of semiconductor device |
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