JPS63237449A - Hermetic sealing package with ceramic cover and manufacture of the same - Google Patents

Hermetic sealing package with ceramic cover and manufacture of the same

Info

Publication number
JPS63237449A
JPS63237449A JP62237067A JP23706787A JPS63237449A JP S63237449 A JPS63237449 A JP S63237449A JP 62237067 A JP62237067 A JP 62237067A JP 23706787 A JP23706787 A JP 23706787A JP S63237449 A JPS63237449 A JP S63237449A
Authority
JP
Japan
Prior art keywords
lid
ceramic
metallization
recess
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62237067A
Other languages
Japanese (ja)
Inventor
ロバート・シー・バイルン
ジョン・ティー・イワニック
チー−メン・ユ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of JPS63237449A publication Critical patent/JPS63237449A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/14—Soldering, e.g. brazing, or unsoldering specially adapted for soldering seams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
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    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Casings For Electric Apparatus (AREA)
  • Ceramic Products (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体素子を格納するために一般的忙使用され
るハーメチックバ、ケージに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a hermetic cage commonly used for storing semiconductor devices.

〔従来の技術〕[Conventional technology]

半導体産業において、かかる素子の一つとしてセラミッ
ク側をろう付けしたデュアルインラインパッケージが知
られている。同バ、ケージは矩形状であってその側部処
ろう付けした２列の金属ピンを備えている。パッケージ
本体内に配置された凹所は半導体素子を格納し素子のボ
ンディングパツビをパッケージ内に組込んだ金属の通路
へ接続するための手段が設けられている。これらの通路
は側部をろう付けされたビンと導通する。パッケージは
最終的に密閉蓋をパッケージ凹所上に溶接もしくは、は
んだ付けすることによってハーメチックシールされる。In the semiconductor industry, one such device is known as a dual in-line package in which the ceramic side is brazed. The cage is rectangular and has two rows of metal pins brazed to its sides. A recess located within the package body accommodates a semiconductor device and is provided with means for connecting the bonding pins of the device to metal passageways incorporated within the package. These passages communicate with the bottles which are brazed on the sides. The package is finally hermetically sealed by welding or soldering the sealing lid onto the package recess.

バ、ケージ凹所は普通、セラミックに付着するメタライ
ゼーションリングにより包囲される。リング上には、は
んだプリフォーム（ｐｒｅｆｏｒｍ）が配置されはんだ
プリフォームの上部にはメタルキャップが配置される。The cage recess is usually surrounded by a metallization ring that adheres to the ceramic. A solder preform is placed on the ring, and a metal cap is placed on top of the solder preform.

上記組成体はその後加熱され金属蓋とメタライゼーショ
ンとを湿潤させるはんだを溶かす。冷却後はんだはキャ
ップをパッケージに固定させることになる。メタルキャ
ップはそれが付着されるセラミックと両立しうるコパー
（Ｋｏｖ　ａ　ｒ　）として知られるニッケル、鉄、コ
バルト及びマンガンの金属合金から成るのが普通である
。The composition is then heated to melt the solder that wets the metal lid and metallization. After cooling, the solder will secure the cap to the package. The metal cap is typically comprised of a metal alloy of nickel, iron, cobalt and manganese known as Kov a r which is compatible with the ceramic to which it is deposited.

腐食の問題を避けるために蓋は普通二、ケルによりめっ
きした後金でめっきする。はんだプリフォームは約２８
０°Ｃで溶ける金と錫の合金から成る。To avoid corrosion problems, the lid is usually plated with two coats of gold and then plated with gold. The solder preform is approximately 28
It consists of an alloy of gold and tin that melts at 0°C.

代わりに、蓋をニッケル、チタン、タンタル、ニオブも
しくはタングステンの合金の如き耐環境性の金属を組成
してもよ（、あるいはステンレス鋼により構成してもよ
い。蓋をセラミック本体にはんだづけした後メーカや組
立日付コードの如き素子識別標識やその他の所望データ
を刻印する。Alternatively, the lid may be composed of an environmentally resistant metal such as an alloy of nickel, titanium, tantalum, niobium, or tungsten (or may be constructed of stainless steel. After the lid is soldered to the ceramic body, the manufacturer's engraved with device identification marks such as assembly date codes and other desired data.

金属蓋の必要条件は厳しく最終面は非腐食性でかつマー
キングを付すことができそれを保持することができるも
のでなければならない。それはセラミック本体と両立し
うるもので同本体に対してはんだ付は可能なものでなけ
ればならず、一方熱サイクルと機械的サイクル全体にわ
たってバー・メチツクシールを維持するものでなければ
ならない。The requirements for the metal lid are stringent: the final surface must be non-corrosive and able to bear and retain markings. It must be compatible with and capable of being soldered to a ceramic body, while maintaining a bar mesh seal throughout thermal and mechanical cycling.

上記の相競合する必要条件は幾分高価でやや信頼性の低
いクロージャ（ｃｌｏｓｕｒｅ）シールをもたらすこと
が多かった。コストを低減しセラミックパッケージ用の
密閉蓋の信頼性を向上させることが望まれている。The above competing requirements have often resulted in somewhat expensive and somewhat unreliable closure seals. It is desired to reduce the cost and improve the reliability of hermetic lids for ceramic packages.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

本発明の目的はセラミックパッケージのクロージャシー
ル用の低コストセラミック蓋を提供することである。It is an object of the present invention to provide a low cost ceramic lid for the closure seal of a ceramic package.

本発明の目的は更に信頼性のあるセラミック蓋、ケージ
用クロージャシールを製作する上で有益な低コストセラ
ミック蓋を製作する方法を提供することである。It is a further object of the present invention to provide a method of making a low cost ceramic lid that is useful in making reliable ceramic lids and cage closure seals.

本発明の目的は更にセラミックパッケージにおける信頼
性のあるクロージャシールを提供し素子マーキングを可
能にし保持することのできる低コストセラミック蓋を提
供することである。It is a further object of the present invention to provide a low cost ceramic lid that provides a reliable closure seal in a ceramic package and is capable of enabling and retaining device markings.

本発明の目的は更にセラミックパッケージにおける信頼
性のあるクロージャシールを提供し素子マーキングを可
能にし保持でき苛酷で塩気的な環境において腐食のない
蓋を維持することのできる低コストセラミック蓋を提供
することである。It is a further object of the present invention to provide a low cost ceramic lid that provides a reliable closure seal in a ceramic package, allows for and retains device markings, and maintains a corrosion-free lid in harsh and salty environments. It is.

〔問題点を解決するための手段及び作用〕以上の目的な
らびにその他の目的は以下の如くして実現できる。高ア
ルミナセラミック蓋はその周縁部に凹所を備えている。[Means and operations for solving the problems] The above objects and other objects can be achieved as follows. The high alumina ceramic lid has a recess around its periphery.

凹所との面ば同凹所を被覆しセラミックに付着するメタ
ライゼーションによりコーチングされはんだ付は可能な
面を提供している。メタライズされた蓋ははんだプリフ
ォームを介在させたセラミックパッケージ上のメタライ
ゼーションに対して加圧され、該組成体を加熱しはんだ
を溶かす。その後はんだはキャップ上の金属とパッケー
ジ上の金属とを湿らし、はんだシールがつくられる。は
んだは蓋の凹所に付着するフィレット（ｆｉｌｌｅｔ）
を形成することにより可視的で信頼性のあるノ・−メチ
ツクシールを形成することになる。セラミック蓋はセラ
ミックパッケージをハーメチックシールし、その外側表
面は素子マーキングを受は入れ保持することができる。The surface of the recess is coated with a metallization that covers the recess and adheres to the ceramic, providing a solderable surface. The metallized lid is pressed against the metallization on the ceramic package with the solder preform interposed, heating the composition and melting the solder. The solder then wets the metal on the cap and the metal on the package, creating a solder seal. The solder is a fillet that adheres to the recess of the lid.
This creates a visible and reliable seal. The ceramic lid hermetically seals the ceramic package, and its outer surface can receive and retain device markings.

セラミック蓋の膨張はパッケージのそれと合致するから
、温度サイクルが繰返される間、クロージヤーシール内
に歪みが誘発されることはな（、そのためクロージヤー
シールの信頼性は高（なる。Because the expansion of the ceramic lid matches that of the package, no distortion is induced in the closure seal during repeated temperature cycling, thus making the closure seal more reliable.

最後に同蓋は苛酷な化学的環境にも耐えることができる
。Finally, the lid can withstand harsh chemical environments.

〔実施例〕〔Example〕

第１図には構造を示すために一隅を破断した蓋１０が示
されている。蓋１０は所望の色を与えるために顔料を含
んだ９２〜９６％のアルミナにより成形する。蓋の辺縁
部１１附近を面取りして凹所をつ（りだす。凹所を備え
た蓋面はメタライゼーション層１２を有する。蓋の反対
面は完成バ、２ケージから去る方向に延びる面を構成す
ることになる。図面においてメタライゼーションはシー
ル面の一部のみを被覆するように描かれているが、シー
ル面全体を覆うようにすることもできることを了解され
たい。FIG. 1 shows the lid 10 with one corner cut away to show the structure. The lid 10 is molded from 92-96% alumina containing pigment to provide the desired color. The lid is chamfered near the edge 11 to create a recess. The lid surface with the recess has a metallization layer 12. The opposite side of the lid is the finished bar, the surface extending away from the cage. Although the metallization is depicted in the drawings as covering only a portion of the sealing surface, it should be understood that it could also cover the entire sealing surface.

第２図において、高アルミナセラミックペース１６は側
部をろう付けしたセラミックパッケージの本体を形成す
る。本体１３の側部には１５の箇所でピン１４がろう付
けされる。In FIG. 2, high alumina ceramic paste 16 forms the body of the side brazed ceramic package. Pins 14 are brazed to the side of the main body 13 at 15 locations.

本体１３内に配置されたキャビティ底部のメタライゼー
ション１７には半導体素子１６が固定される。キャビテ
ィ肩はワイヤポンド１９により半導体素子１６上のポン
ディングパッドと相互接続されるメタライゼーション１
８を備える。肩メタライゼーション１８は破線で示すよ
うに本体１３内を延び、ろう１５と接触する。かくして
ピン１４は本体１６内に埋設された金属線により半導体
素子１６に対して電気的に接続される。A semiconductor element 16 is fixed to a metallization 17 at the bottom of the cavity arranged in the body 13 . The cavity shoulder is interconnected with a bonding pad on the semiconductor element 16 by a wire bond 19.
8. Shoulder metallization 18 extends within body 13 and contacts braze 15 as shown in dashed lines. The pin 14 is thus electrically connected to the semiconductor element 16 by the metal wire embedded within the body 16.

本体１６はその内部にキャビティを包囲するメタライゼ
ーションリング２０を備える。ここで従来の側部ろう付
はセラミックパッケージを説明しておく。従来の手順で
はメタルプレートをメタライゼーションリング２０には
んだ付けしてノ・−メチツクシールされたパッケージが
完成されることになる。The body 16 has a metallization ring 20 surrounding the cavity within it. Here, conventional side brazing will be explained for ceramic packages. The conventional procedure would be to solder the metal plate to the metallization ring 20 to complete the metal-sealed package.

本発明によれば第１図に示したようなセラミック蓋が本
体１６に対してはんだ付けされる。このためにはんだプ
リフォーム２１を第２図に示すように蓋１０と本体゛１
３との間に配置する。第６図は、はんだ付けした後のパ
ッケージの断面図を示す。はんだプリフォームが溶けて
はんだフィレット２２をつくりだしたところである。そ
の他のはんだを使用することができるが、プリフォーム
２１は２８０°Ｃ附近で溶ける金とすすの共晶合金によ
り製作することが望ましい。かかるはんだはパッケージ
が２００°Ｃ以上で動作することを可能にし、半導体素
子を損傷しない温度でシールすることになる。最後に、
かかるはんだは耐環境性で、もつと通常のはんだの多く
に有害な影響を及ぼすような雰囲気内でも腐食すること
はない。According to the invention, a ceramic lid such as that shown in FIG. 1 is soldered to the body 16. For this purpose, the solder preform 21 is connected to the lid 10 and the main body 1 as shown in FIG.
Place it between 3 and 3. FIG. 6 shows a cross-sectional view of the package after soldering. The solder preform has been melted to create a solder fillet 22. Although other solders can be used, the preform 21 is preferably made of a eutectic alloy of gold and soot that melts at around 280°C. Such solder allows the package to operate above 200°C and will seal the semiconductor device at a temperature that will not damage it. lastly,
Such solders are environmentally resistant and will not corrode in atmospheres that would be harmful to many conventional solders.

第６図に示す如く、はんだはフィレット２２を形成し同
はんだはメタライゼーションが存在する場合に本体１３
と蓋１０の双方を湿潤させている。As shown in FIG. 6, the solder forms a fillet 22 and the same solder forms the body 13 when metallization is present.
and the lid 10 are moistened.

はんだフィレットは、はんだ付は後に目で見ることがで
き、その外観は、はんだ付は作業を視覚検査する際に役
立つ。はんだフィレットは凹所部分内の蓋のメタライゼ
ーションに付着し良好なシールをつくる。本体１３と蓋
１０は共にセラミックにより構成されているため、それ
らは完成パッケージが温度サイクルを蒙ったときに共に
膨張し収縮する。そのため、かかるサイクル忙よっては
んだシールが応力を蒙ることはな（温度サイクルが繰返
される間に疲労の問題が生じることは全くない。かかる
セラミック蓋はすこぶる堅牢であることが判った。周知
の金属蓋はセラミックパッケージから［ポツプオフ（ｐ
ｏｐ　ｏｆｆ）ｊする虞れがあるが、セラミック蓋はそ
の虞れがない。シール済みのセラミック蓋を取外すには
破砕し、ばらばらにして取除くかしなければならないの
が普通である。The solder fillet is visible after soldering, and its appearance is useful when visually inspecting the soldering work. The solder fillet adheres to the metallization of the lid within the recessed portion and creates a good seal. Because the body 13 and lid 10 are both constructed of ceramic, they expand and contract together when the finished package is subjected to temperature cycling. Therefore, the solder seals are not stressed by such cycling (there are no fatigue problems during repeated temperature cycling).Such ceramic lids have been found to be very robust. is removed from the ceramic package [Pop-off (p
However, the ceramic lid does not have this risk. To remove a sealed ceramic lid, it typically must be crushed and removed in pieces.

第４図はセラミック蓋が低コストで製作される方法を示
す。出発材料は高アルミナウェハ２３である。それは許
容差の必要条件が厳しくないため低コストである。例え
ば、４インチ（約１０２ｍｍ）角のウェハで厚さ約０．
０２５インチ（約０．６３５　ｍｍ）のものを使用する
ことができる。図のように一連の垂直方向と水平方向の
ソー切り溝をウェハ内に一部（約１／３〜１１５）延ば
し第５図（ウェハ２３の一部の断面図）に示すようなス
ロットをつくるように構成することができる。比較的幅
の広いソー刃を用いて切り溝２４をつくることができる
。例えば、５〜８ミル（約０．１２７〜０．２０３雇１
゜の深さに切り込む１０ミル（０，２５４ｍｍ）のソー
刃であればその切り溝２４は適当なものである。図面の
パターンでは０．４７２インチ（約１２朋）角の蓋が一
枚の４インチウェハから６４個つ（ることかできる。FIG. 4 shows how a ceramic lid can be manufactured at low cost. The starting material is a high alumina wafer 23. It is low cost due to less stringent tolerance requirements. For example, a 4 inch (approximately 102 mm) square wafer has a thickness of approximately 0.
0.025 inch (approximately 0.635 mm) can be used. Extend a series of vertical and horizontal saw grooves a portion (approximately 1/3 to 115 mm) into the wafer as shown to create slots as shown in FIG. 5 (cross-sectional view of a portion of wafer 23). It can be configured as follows. The kerf 24 can be created using a relatively wide saw blade. For example, 5 to 8 mills (approximately 0.127 to 0.203
The kerf 24 is suitable for a 10 mil (0.254 mm) saw blade that cuts to a depth of .degree. According to the pattern shown in the drawing, 64 lids of 0.472 inch (approximately 12 mm) square can be made from one 4 inch wafer.

図面の如くソー切り溝をつ（りだした後、メタライゼー
ション１２によりのこ切りした面を被覆する。多数のメ
タライゼーションを設計利用することができるが、シル
クスクリー；ングによりメタライゼーションペーストを
塗布することが望ましい。例えば、有機固着剤と溶剤（
例えばデーポン≠９７７０）内にパラジウムと銀の合金
粉末の懸濁させたものを溶剤（例えばデュポン≠９１８
０）を添加することにより希釈し、シルクスクリーニン
グに適した一貫性をもったペーストをつくりだすように
する。ペーストはウェハ上にシルクスクリーニングした
後、１５０°Ｃの温度で１０分間乾燥させる。必要とあ
らばウェハ上にかかる層をもう一部シルクスクリーニン
グして乾燥させる。After cutting out the saw grooves as shown in the drawing, the sawed surfaces are coated with metallization 12. Although many metallizations can be used in the design, the metallization paste is applied by silk-screening. For example, organic fixing agent and solvent (
A suspension of palladium and silver alloy powder in a solvent (for example, Dupont ≠ 918)
0) to create a paste with a consistency suitable for silk screening. The paste is silk screened onto a wafer and then dried at a temperature of 150°C for 10 minutes. If necessary, silk screen another layer on the wafer and dry.

適当なペースト厚が達成されると、約８７０°Ｃ±５°
Ｃのピーク温度でウェハを約１０分間焼成する。Once a suitable paste thickness is achieved, approximately 870°C ± 5°
Bake the wafer for about 10 minutes at a peak temperature of C.

高温での焼成は約１時間持続し、その間残りの有機材料
は燃え切り、ガラスは溶けてガラス固着剤内に保持され
たパラジウム銀の粒子塊をつ（りだす。その結果得られ
る層１２は導電性で高アルミナセラミックに対してすこ
ぶる良好に接着する。Firing at high temperature lasts approximately one hour, during which time the remaining organic material burns off and the glass melts to release agglomerates of palladium-silver particles held within the glass binder.The resulting layer 12 is It is electrically conductive and adheres very well to high alumina ceramics.

層はまた従来はんだにより容易に湿潤させることができ
る。The layer can also be easily wetted by conventional solder.

導電層１２がセラミックウェハ上に焼成された後、メタ
ル保持リング（図示せず）を有するニツコー（ＮｉＫｆ
（ｏ）テープをメタライジングされないウェハ面に付着
することによってウエノ・を個々の蓋にのこ切りできる
ようにする。この作業中、約６ミル（約０．０７７ｍｍ
）厚のノー薄刃を用いて第５図に破線で示すように２５
の部分でウェハ（および保持テープの一部）をのこぎり
する。最初のソー切り溝が所望の辺縁凹所をつ（りだす
ことが判る。後のソーイング後、保持テープを適当な化
学溶剤にて取除くとメタライジングされた一部のセラミ
ック蓋が残る。メタライジングはシルクスクリーニング
により塗布されるから、メタルをソーの切り溝領域にだ
け選択的に塗布する操作を使用することができる。さも
なげれば、メタライゼーションはウェハのソー切り溝を
完全に被覆する。After the conductive layer 12 is fired onto the ceramic wafer, a NiKf.
(o) Adhering tape to the non-metallized wafer surface to allow the wafer to be sawed into individual lids. During this process, approximately 6 mil (approximately 0.077 mm)
) using a thin blade with a thickness of 25 mm as shown by the dashed line in Figure 5.
Saw the wafer (and part of the retaining tape) in pieces. It can be seen that the first saw groove creates the desired edge recess. After subsequent sawing, the retaining tape is removed with a suitable chemical solvent, leaving some metallized ceramic lid. Since the metallization is applied by silk screening, an operation can be used that selectively applies the metal only to the saw kerf area, otherwise the metallization will completely cover the saw kerf area of the wafer. do.

半導体素子実装作業においては第６図に示した工程を使
用して第２図と第６図の構造をつ（りだす。第２図のプ
リフォーム２１は約８０％の金と約２０％の錫を組成成
分とすることが望ましい。In semiconductor device mounting work, the process shown in Figure 6 is used to produce the structures shown in Figures 2 and 6. The preform 21 in Figure 2 is made of about 80% gold and about 20% gold. Preferably, tin is a constituent component.

ブロック２６内に示される如く、半導体素子１６は、は
んだ付けもしくは導電性接着剤の如き従来手段によりハ
ウジングキャビティ内に固定する。As shown in block 26, semiconductor device 16 is secured within the housing cavity by conventional means such as soldering or conductive adhesive.

その後、半導体素子ポンディングパッドをアルミもしく
は金のワイヤ１９もしくは銅スパイダ（図示せず）によ
り接着したテープ組成体により・・ウジング導体に接続
する。その後、ハウジングをジグ（同様に図示せず）内
に配置し、該ジグは蓋１０をブロック２７に従ってプリ
フォーム２１上の所定位置に加圧する。その後、ジグは
約５分間約６４０°Ｃのピーク温度を提供する炉内を通
過する。The semiconductor device bonding pads are then connected to the housing conductors by means of a tape composition adhered by aluminum or gold wires 19 or copper spiders (not shown). The housing is then placed in a jig (also not shown) which presses the lid 10 into position on the preform 21 according to the block 27. The jig is then passed through an oven providing a peak temperature of about 640°C for about 5 minutes.

この焼成作業中、第３図に２２で示すはんだシールが実
現されブロック２８内に示す効果をつ（りだす。最終的
なシールを視覚検査するとブロック２９に示す工程は完
了する。完成素子はブロック３０中に示すようにマーキ
ングされる。During this firing operation, the solder seal shown at 22 in FIG. 3 is achieved and produces the effect shown in block 28. Visual inspection of the final seal completes the step shown in block 29. It is marked as shown in 30.

以上、本発明と望ましい方法について詳述した。The present invention and preferred method have been described in detail above.

当業者が以上の説明を読了すれば、代替的又は等価な実
施例も本発明の精神と目的の範囲内で明らかとなろう。Alternative or equivalent embodiments will be apparent to those skilled in the art after reading the above description and are within the spirit and purpose of the invention.

従って、本発明の範囲は特許請求の範囲によってのみ限
定されるものである。Accordingly, the scope of the invention is limited only by the claims that follow.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明によるセラミック蓋部分破断斜視図、第
２図はシールする前の蓋つきセラミックパッケージの断
面図、第３図はシール後の蓋を所定位置に有するセラミ
ックパッケージの断面図、第４図は蓋を製作するさいに
使用されるセラミックウェハの上面図、 第５図はメタライゼーション後の第４図ウエノ・の断面
図、 第６図はパッケージ組立を示すブロック線図。 １０：蓋　　　　　１１：周縁部 １２：メタライゼーション　１６：セラミツク本体１４
：ピン　　　　１５：ろう １６：半導体素子　　　　１７，１８　：メタライゼー
ション１９　：ワ　イ　ヤ　　　　２０：メタライゼー
ションリング２１ニブリフオーム　　　２２：フイレッ
ト２６：ウェハ　　２４：切り溝 （外４名）FIG. 1 is a partially cutaway perspective view of a ceramic lid according to the present invention, FIG. 2 is a sectional view of a ceramic package with a lid before being sealed, FIG. 3 is a sectional view of a ceramic package with a lid in place after sealing, and FIG. Figure 4 is a top view of the ceramic wafer used in manufacturing the lid, Figure 5 is a cross-sectional view of the ceramic wafer in Figure 4 after metallization, and Figure 6 is a block diagram showing package assembly. 10: Lid 11: Periphery 12: Metallization 16: Ceramic body 14
: Pin 15: Solder 16: Semiconductor element 17, 18: Metallization 19: Wire 20: Metallization ring 21 Nib form 22: Fillet 26: Wafer 24: Groove (4 people outside)

Claims (1)

【特許請求の範囲】 １、セラミック蓋がパッケージにはんだ付けされ最終的
なハーメチックシールをつくるためのハーメチックセラ
ミックパッケージ用クロージヤシールにおいて、上記蓋
が平坦な第一の面と、凹所を備える周縁部を有する反対
面と、を有する高アルミナセラミックのスラブと、 前記反対面上に配置され前記周縁部の凹所上に延びるメ
タライゼーション層であつて、それにより上記蓋が上記
パッケージにはんだ付けされたときはんだフィレットが
つくられて上記凹所内へ延びることになるメラタイゼー
ション層と、 を備えることを特徴とするクロージヤシール。 ２、上記蓋上に配置された上記メタライゼーション層の
セラミック表面に対するはんだ付性と接着性を選択でき
ることを特徴とする特許請求の範囲第１項に記載のクロ
ージヤシール。 ３、上記メタライゼーション層がパラジウムと銀の合金
を含むことを特徴とする特許請求の範囲第２項に記載の
クロージヤシール。 ４、上記メタライゼーション層が上記蓋の反対面を完全
に覆うことを特徴とする特許請求の範囲第１項に記載の
クロージヤシール。 ５、上記メタライゼーション層が上記凹所に直かに隣接
した上記蓋の反対面部分を覆うことを特徴とする特許請
求の範囲第１項に記載のクロージヤシール。 ６、クロージヤシールをハーメチックセラミックパッケ
ージ内に形成する際に使用されるセラミック蓋を製作す
るための方法において、平坦な反対面を有するセラミッ
クスラブから開始するステップと、上記スラブ内をごく
一部延びる上記スラブの第一面内に、全体として所定幅
を有する一連の凹所を複数のセラミック蓋構造の輪郭を
描くように形成するステップと、上記凹所がその内部に
形成された後に上記第一面に対してメタライゼーション
層を塗布して上記凹所をメタライジングするステップと
、上記ウェハを上記凹所の枠内側で別々に切断しかくし
てつくられた周縁部凹所内にメタライゼーションを有す
る複数の独立の蓋を形成するステップと、 を備えることを特徴とする方法。 ７、メタライゼーション層を塗布して上記凹所をメタラ
イジングする上記ステップが、金属粒子とガラス粉と固
着剤と溶剤からなるペーストを形成するステップと、 上記ペーストを上記ウェハ上にシルクスクリーニングし
、上記ウェハを焼成して上記溶剤と固着剤を駆逐しガラ
ス構造内にセラミックに付着する金属粒子のマトリクス
を残すステップと、 を備えることを特徴とする特許請求の範囲第６項に記載
の方法。 ８、上記シルクスクリーニングにより上記ペーストを塗
布し上記セラミックスラブの第１面を完全に覆うことを
特徴とする特許請求の範囲第７項に記載の方法。 ９、上記シルクスクリーニングが上記凹所と、直ぐ隣接
した面部分に対して行われることを特徴とする特許請求
の範囲第７項に記載の方法。 １０、上記形成ステップがソーイングにより行われるこ
とを特徴とする特許請求の範囲第６項に記載の方法。 １１、上記切断ステップが上記形成ステップにおいて使
用されるソー刃に比して薄いソー刃を使用するソーイン
グにより行われることを特徴とする特許請求の範囲第１
０項に記載の方法。 １２、電子装置を格納するためにその一面に凹所を備え
た高アルミナセラミック本体から成るハーメチックセラ
ミックパッケージ内にクロージヤシールを形成する方法
であつて、上記凹所が上記面上に形成されたメタリゼー
ションリングにより包囲される方法において、 その一面内に周縁部凹所を有する高アルミナセラミック
キャップを形成するステップと、上記キャップ面上にメ
タライゼーション層を形成して上記凹所を該メタライゼ
ーションにより被覆するステップと、 上記メタライゼーションリングと整列するようにはんだ
プリフオームをセラミック本体に付着するステップと、 上記蓋を上記はんだプリフオーム上に配置して上記蓋上
の上記メタライゼーションが上記はんだプリフオームに
接触するステップと、 上記本体を上記はんだプリフオームと上記蓋と共に所定
位置に焼成して上記はんだが溶けて上記蓋を上記本体に
固定してハーメチックシールを完成するステップと、 を備えることを特徴とする方法。 １３、上記メタライゼーションがガラスマトリクス内の
金属粒子から成り、上記はんだが上記電子装置と両立す
る温度で溶ける合金より成ることを特徴とする特許請求
の範囲第１２項に記載の方法。 １４、上記電子装置がシリコン集積回路であつて、上記
メタライゼーションがパラジウムと銀の合金粒子より成
り、上記はんだ合金が金と錫とを組成成分とすることを
特徴とする特許請求の範囲第１３項に記載の方法。[Claims] 1. A closure seal for a hermetic ceramic package in which the ceramic lid is soldered to the package to create a final hermetic seal, wherein the lid has a flat first surface and a peripheral edge with a recess. a slab of high alumina ceramic having an opposite surface having a portion thereof; and a metallization layer disposed on the opposite surface and extending over a recess in the periphery, whereby the lid is soldered to the package. A closure seal comprising: a layer of melatization that extends into the recess when a solder fillet is created. 2. The closure seal according to claim 1, wherein the solderability and adhesiveness of the metallization layer disposed on the lid to the ceramic surface can be selected. 3. The closure seal according to claim 2, wherein the metallization layer comprises an alloy of palladium and silver. 4. The closure seal of claim 1, wherein said metallization layer completely covers the opposite side of said lid. 5. A closure seal according to claim 1, wherein said metallization layer covers the opposite side portion of said lid immediately adjacent said recess. 6. A method for making a ceramic lid for use in forming a closure seal in a hermetic ceramic package, including starting with a ceramic slab having a flat opposing surface and extending a small portion within said slab. forming a series of recesses having a generally predetermined width in a first surface of the slab to delineate a plurality of ceramic lid structures; metallizing the recess by applying a layer of metallization to the surface; cutting the wafer separately inside the frame of the recess, and forming a plurality of peripheral recesses having metallization in the peripheral recesses thus created; A method comprising: forming a separate lid; 7. The step of applying a metallization layer to metallize the recesses comprises forming a paste consisting of metal particles, glass powder, a binder and a solvent, and silk screening the paste onto the wafer; 7. The method of claim 6, further comprising firing the wafer to drive off the solvent and binder leaving a matrix of metal particles adhering to the ceramic within the glass structure. 8. A method according to claim 7, characterized in that the paste is applied by the silk screening to completely cover the first side of the ceramic slab. 9. A method according to claim 7, characterized in that said silk screening is carried out on said recess and immediately adjacent surface portions. 10. The method of claim 6, wherein said forming step is performed by sawing. 11. Claim 1, wherein the cutting step is performed by sawing using a thinner saw blade than the saw blade used in the forming step.
The method described in item 0. 12. A method of forming a closure seal in a hermetic ceramic package consisting of a high alumina ceramic body with a recess on one surface thereof for housing an electronic device, the recess being formed on the surface. The method includes the steps of: forming a high alumina ceramic cap having a peripheral recess in one side thereof; forming a metallization layer on the cap surface to fill the recess with the metallization; depositing a solder preform on a ceramic body in alignment with the metallization ring; and placing the lid over the solder preform so that the metallization on the lid contacts the solder preform. and firing the body together with the solder preform and the lid in place to melt the solder and secure the lid to the body to complete a hermetic seal. 13. The method of claim 12, wherein the metallization consists of metal particles in a glass matrix and the solder consists of an alloy that melts at a temperature compatible with the electronic device. 14. Claim 13, wherein the electronic device is a silicon integrated circuit, the metallization is made of alloy particles of palladium and silver, and the solder alloy has gold and tin as composition components. The method described in section.
JP62237067A 1987-03-17 1987-09-21 Hermetic sealing package with ceramic cover and manufacture of the same Pending JPS63237449A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/026,912 US4769272A (en) 1987-03-17 1987-03-17 Ceramic lid hermetic seal package structure
US26912 2001-12-27

Publications (1)

Publication Number Publication Date
JPS63237449A true JPS63237449A (en) 1988-10-03

Family

ID=21834505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62237067A Pending JPS63237449A (en) 1987-03-17 1987-09-21 Hermetic sealing package with ceramic cover and manufacture of the same

Country Status (4)

Country Link
US (1) US4769272A (en)
JP (1) JPS63237449A (en)
DE (1) DE3733304A1 (en)
GB (1) GB2202479B (en)

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Also Published As

Publication number Publication date
US4769272A (en) 1988-09-06
GB2202479A (en) 1988-09-28
DE3733304A1 (en) 1988-10-06
GB2202479B (en) 1991-01-02
GB8717887D0 (en) 1987-09-03

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