JP5537119B2 - Lid, lid manufacturing method and electronic device manufacturing method - Google Patents

Description

  The present invention relates to an electronic component storage package in which a lid is bonded to an insulating substrate having a recess for storing an electronic component via solder, and an electronic device in which the electronic component is hermetically sealed in the electronic component storage package It is about.

  Electronic parts such as semiconductor elements, piezoelectric elements, sensor elements, etc. are generally electronic parts having a rectangular parallelepiped-like insulating base having a concave portion on the upper surface and an outer peripheral portion of the lower surface joined to the upper surface of the insulating base so as to close the concave portion. Used in a hermetically sealed recess in the storage package. An electronic device in which an electronic component is hermetically sealed in an electronic component storage package is electrically connected to an external electric circuit formed on a circuit board constituting an electronic device such as a computer, a mobile phone, a digital camera, or a sensor device. Connected to. Note that the electrical connection between the electronic component and the external electric circuit is performed, for example, via a wiring conductor formed from the inside of the recess of the insulating base to the outer surface such as the lower surface. That is, the electrode of the electronic component is electrically connected to the portion of the wiring conductor located in the recess through a bonding wire, and the portion of the wiring conductor located on the outer surface of the insulating base is soldered to an external electric circuit. If it joins via this conductive joining material, an electronic component and an external electric circuit will be electrically connected via a wiring conductor.

  In such an electronic component storage package and electronic device, solder is generally used for joining the lid and the insulating base. In this case, the solder (sealing solder) used for joining the lid and the insulating substrate has a melting point higher than that of the solder (mounting solder) used for connection between the electronic device and the external electric circuit. There must be. If the melting point of the sealing solder is lower than the melting point of the mounting solder, the sealing solder may be melted by heating when the electronic device is connected to the external electric circuit, and the reliability of the hermetic sealing may be reduced. There is.

  Conventionally, as a solder for sealing, a so-called high-temperature solder having a melting point of about 270 to 300 ° C., such as lead-tin, is used. As a mounting solder, a tin-lead solder having a melting point of about 184 ° C. (So-called eutectic solder) was used.

JP 2001-353590 A JP 2005-072173 A

  However, in recent years, in order to prevent adverse effects on the environment, such as the Restriction on Hazardous Substances (RoHS) Directive in Europe, it has been required not to use lead as a solder material (so-called lead-free). It has become like this. Therefore, there is a need to provide an electronic component storage package and an electronic device using solder instead of the conventional lead-based high-temperature solder.

  In this case, lead-free soldering is also required for the solder for connecting the electronic device to the external electric circuit. Instead of the conventional tin-lead solder, tin-silver solder, tin-silver-copper solder, etc. In other words, so-called lead-free solder is frequently used as mounting solder. Such lead-free solder has a relatively high melting point of about 220 ° C. or higher compared to conventional tin-lead solder. For this reason, a solder having a melting point higher than that of the conventional solder is required.

  The present invention has been devised in view of such conventional problems. The purpose of the present invention is to prevent the solder bonded to the lid from containing lead, and further to the insulating substrate through the solder. To provide an electronic component sealing package having high hermetic sealing reliability when bonded, and an electronic device having high hermetic sealing reliability in which an electronic component is accommodated in the electronic component storage package It is in.

The lid of the present invention has a recess for hermetically sealing and storing an electronic component on the upper surface, and is joined to an insulating base formed with a metal layer surrounding the recess to hermetically seal the recess. The lid body is made of a metal material having at least one outer peripheral portion of a lower surface made of nickel, cobalt, iron, gold, silver, platinum and palladium, and a solder layer is attached to the outer peripheral portion. The solder layer is arranged in order from the metal material side, the first solder layer mainly composed of an alloy phase of tin and a metal component of the metal material, and 2 to 2 tin composed mainly of a bismuth phase. It comprises a second solder layer having a melting point lower than that of the first solder layer, containing 5% by mass of a tin-bismuth alloy phase.

The lid manufacturing method of the present invention is bonded to an insulating substrate having a recess for hermetically sealing and housing an electronic component on the upper surface and formed with a metal layer surrounding the recess. A method of manufacturing a hermetically sealed lid, wherein the metal material portion of a plate-like material made of a metal material having at least an outer peripheral portion of a lower surface of at least one of nickel, cobalt, iron, gold, silver, platinum and palladium Bismuth-tin solder containing 6 to 10% by mass of tin, a first solder layer mainly composed of an alloy phase of the metal material and tin, and tin containing 2 to 5% by mass of tin -A second solder layer containing a bismuth alloy phase and having a melting point lower than that of the first solder layer is formed.

The method of manufacturing an electronic device according to the present invention includes an insulating base having a recess for hermetically sealing and storing an electronic component on the upper surface and having a metal layer surrounding the recess, and an electron stored in the recess. A component, and a lid having at least an outer peripheral portion of a lower surface made of a metal material, wherein the metal layer of the insulating base and the metal material of the lid are bonded via a bonding layer, and the recess is hermetically sealed 2. The electronic device manufacturing method according to claim 1, wherein the insulating base is a metal layer that is at least one of nickel, cobalt, iron, gold, silver, platinum, and palladium, and the second of the lids according to claim 1. By contacting the solder layer, melting the second solder layer, and sequentially disposed from the metal material side, the first solder layer mainly composed of an alloy phase of tin and a metal component of the metal material First bonding layer and bismuth phase The main component is a second bonding layer having a melting point lower than that of the first bonding layer and higher than that of the second solder layer, and an alloy phase of tin and the metal component of the metal layer as a main component. The bonding layer including the third bonding layer having a melting point higher than that of the second bonding layer is formed.

  According to the electronic component storage package of the present invention, the first solder layer that directly joins the solder layer to the lid is mainly composed of an alloy phase of tin and the metal component of the metal material of the lid, and its melting point However, it is higher than about 400 ° C due to the action of metal materials. The second solder layer for connecting the lid to the insulating base (actually a soldering metal layer formed on the insulating base) comprises a bismuth phase as a main component and a tin-bismuth alloy phase, The melting point is lower than that of the first solder layer. Therefore, instead of the conventional lead solder for sealing, sealing with solder that does not contain harmful lead becomes possible.

  That is, since the melting point of bismuth is relatively high at 271 ° C., the second solder layer mainly composed of the bismuth phase can function as a sealing solder layer in the same manner as conventional lead-based high-temperature solder. In addition, since the second solder layer contains a tin-bismuth phase, the melting point is lower than that of the bismuth phase alone, so that the heating temperature at the time of sealing can be kept low. At the time of sealing, the melting point of the first solder layer is higher than the melting point of the second solder layer due to the action of the metal component of the metal material. Solder layer bonding can be maintained. Further, at the time of sealing, the tin component of the second solder layer can form an alloy phase having a melting point higher than that of the metal material and bismuth of the metal layer on the insulating base side. Therefore, for example, even when the electronic component is hermetically sealed in the electronic component storage package and then connected to the external electric circuit board using a lead-free solder such as tin-silver, the solder layer is not melted. The reliability of hermetic sealing is high. Therefore, an electronic component sealing package having a high reliability of hermetic sealing when the solder layer bonded to the lid does not contain lead and the lid is bonded to the insulating base via the solder layer is provided. Can be provided.

  The electronic component storage package of the present invention is hermetically sealed when the metal material of the lid in the above configuration is at least one of nickel, cobalt, iron, gold, silver, copper, platinum and palladium. Therefore, it is possible to provide an electronic component storage package that is highly practical and useful as an electronic component storage package.

  That is, it is easy to form an alloy phase of the metal material and tin, and the melting point can be more reliably increased as described above. In addition, these metal materials are produced in the form of, for example, a metallized layer or a plating layer on the outer periphery of the lower surface of the lid when the lid is produced by itself or the lid is produced with a material other than the metal material. It is easy to deposit. Therefore, in this case, it is possible to provide an electronic component storage package with high reliability and practicality of hermetic sealing.

  An electronic device according to the present invention has the above-described configuration, and an alloy phase of tin and a metal component of a metal material of the lid body, in which a solder joint layer that joins the lid body and the insulating base is disposed in order from the lid body side. The main component is an alloy phase of a first bonding layer mainly containing bismuth, a second bonding layer mainly containing a bismuth phase and having a melting point lower than that of the first bonding layer, and a metal component of the metal layer of the insulating base. Since it is composed of a third bonding layer having a melting point higher than that of the second bonding layer as a component, it is possible to perform hermetic sealing with a solder bonding layer containing no lead, as in the electronic component storage package of the present invention. Become. Since the bismuth melting point is relatively high, the second bonding layer mainly composed of the bismuth phase can function as a main bonding layer for bonding the lid and the insulating substrate in the same manner as a conventional lead-based high-temperature solder. . For example, even when this electronic device is connected (mounted) to an external electric circuit board using a lead-free solder such as a tin-silver system, melting of the second solder layer is effectively suppressed. The Moreover, since both the first and third bonding layers have higher melting points than the second bonding layer, similarly, melting during mounting is effectively suppressed. Therefore, an electronic device with high hermetic sealing reliability can be provided. The first and third bonding layers have high melting points as described above due to the action of the metal material that forms an alloy phase with tin.

  In the electronic device according to the present invention, in the above configuration, the metal component of the metal material of the lid and the metal component of the metal layer of the insulating base are at least one of nickel, cobalt, iron, gold, silver, copper, platinum, and palladium. In the case of the seed, as in the case of the electronic component storage package of the present invention described above, the reliability of the hermetic sealing can be increased more reliably, and the practicality as an electronic device can be improved. An apparatus can be provided.

  That is, it is easy to form an alloy phase of the metal material and tin, and the melting point can be more reliably increased as described above. In addition, these metal materials are produced in the form of, for example, a metallized layer or a plating layer on the outer periphery of the lower surface of the lid when the lid is produced by itself or the lid is produced with a material other than the metal material. It is easy to deposit. Therefore, in this case, an electronic device with high reliability and practicality of hermetic sealing can be provided.

  As described above, in the electronic component housing package and the electronic device according to the present invention, the second solder layer containing the bismuth phase as a main component and containing the tin-bismuth phase is bonded to the metal layer of the insulating base, so that the temperature is relatively low. From this, the joining of the metal layer and the solder layer (second solder layer) is started, the wettability of the solder layer to the metal layer is improved, and after the joining, a bismuth-tin phase having a low melting point remains in the second joining layer. Absent.

It is sectional drawing which shows an example of embodiment of the electronic component storage package of this invention. It is sectional drawing which shows an example of embodiment of the electronic device of this invention.

  An electronic component storage package and an electronic device according to the present invention will be described with reference to the accompanying drawings.

  FIG. 1 is a cross-sectional view showing an example of an embodiment of an electronic component storage package of the present invention, and FIG. 2 is a cross-sectional view showing an example of an embodiment of an electronic apparatus of the present invention. 1 and 2, 1 is a lid, 2 is a solder layer, 3 is an insulating substrate, 4 is a metal layer, 5 is a wiring conductor, 6 is a solder joint layer, and 7 is an electronic component. The lid 1 and the insulating base 3 basically constitute an electronic component housing package, and the electronic device 7 is basically constructed by hermetically sealing the electronic component 7 in the electronic component housing package. In the electronic component storage package, a solder layer 2 is bonded to a lid 1 having at least an outer peripheral portion of a lower surface made of a metal material. When the solder layer 2 is joined to the metal layer 4 on the upper surface of the insulating base 3 and the recess 3a is closed with the lid 1, the electronic component 7 is hermetically sealed in the recess 3a to produce an electronic device.

  The lid 1 has, for example, a square plate shape, and is made of a metal material such as iron-nickel-cobalt alloy, iron-nickel alloy, copper, aluminum, ceramic material such as aluminum oxide sintered body or aluminum nitride sintered body, or the like. It is made of a material such as a resin material or a glass material. In addition, since it is necessary to close the recessed part 3a of the insulating base | substrate 3 as mentioned above, it is necessary to form the cover body 1 with a dimension larger than the opening of the recessed part 3a at least.

  If the lid body 1 is made of, for example, an iron-nickel-cobalt alloy, the lid body 1 can be manufactured by subjecting a plate material of this alloy material to a punching process, an etching process, or the like, and forming it into a predetermined shape and size. it can. Further, if the lid 1 is made of an aluminum oxide sintered body, the aluminum oxide powder is molded into a predetermined lid 1 shape together with an organic solvent and a binder, and then at a temperature of about 1300 to 1600 ° C. It can be manufactured by a firing method.

  Since the outer peripheral portion of the lower surface of the lid 1 is bonded to the insulating base 3, the solder layer 2 is bonded to the outer peripheral portion of the lower surface. In order to join the solder layer 2, the lid 1 needs to be made of a metal material at least on the outer peripheral portion of the lower surface. Therefore, when the lid body 1 is formed of a material other than the above metal material, it is necessary to deposit the metal material in a layered manner on the outer peripheral portion of the lower surface by means such as a metallizing method or a plating method.

  For example, if the lid 1 is made of an aluminum oxide sintered body, a metal paste such as tungsten or molybdenum is applied to the outer peripheral portion of the lower surface of the unfired molded body to be the lid 1, and the lid 1 If fired simultaneously with the body 1, a metal material (not shown) made of a metallized layer can be deposited. Since the metal material layer made of the metallized layer has low solder wettability, it is preferable to deposit a plating layer of nickel, cobalt, copper, gold, palladium, platinum, or the like on the surface thereof.

  Even when the lid 1 is made of a metal material such as an iron-nickel-cobalt alloy, a plating layer such as nickel, gold, or copper is deposited on the entire surface of the lid 1 to oxidize the lid 1. You may make it suppress.

  The insulating base 3 has a recess 3a for hermetically sealing the electronic component 7 on the upper surface. The electronic component 7 is, for example, a sensor element such as a semiconductor integrated circuit element, a piezoelectric element, or a pressure sensor element, a capacitive element, a resistor, or the like. These electronic components 7 generally have a rectangular parallelepiped shape (square plate shape), and the concave portion 3a has, for example, a rectangular shape in order to accommodate such electronic components 7 efficiently.

  If the insulating substrate 3 having such recesses 3a is made of, for example, an aluminum oxide sintered body, a raw material powder such as alumina is formed into a sheet shape together with an organic solvent and a binder to form a plurality of ceramic green sheets. Next, a part of these ceramic green sheets is appropriately punched and formed into a frame shape. Then, the frame-shaped ceramic green sheet is formed on a flat ceramic green sheet that has not been punched. Are finally fired at a predetermined temperature of about 1300 to 1600 ° C.

  The insulating base 3 is manufactured by separately manufacturing a square plate-like substrate portion and a square frame-like frame portion, and then bonding the frame portion to the upper surface of the substrate portion using a resin adhesive, glass, or the like. It can also be produced by such a method.

  The insulating base 3 is formed with a metal layer 4 surrounding the recess 3 a on the upper surface for bonding with the lid 1 via the solder layer 2. The metal layer 4 is a base metal layer for joining the solder layer 2, and is for supplying a metal material for forming an alloy with the components of the solder layer 2. Such a metal layer 4 is made of a material such as tungsten, molybdenum, manganese, copper, silver, palladium, gold, or platinum, and is attached to the insulating substrate 3 in the form of a metallized layer, a plating layer, a vapor deposition layer, or the like. .

  If the metal layer 4 is made of, for example, a tungsten metallized layer, a metal paste prepared by kneading tungsten powder together with an organic solvent and a binder is screen-printed on the upper surface of the ceramic green sheet to be the insulating substrate 3. It can be formed by printing with this printing method.

  As for the metal layer 4 made of such a metallized layer, a plating layer of nickel, cobalt, copper, gold, palladium, platinum, or the like is formed on the surface thereof in the same manner as when the metal material of the lid 1 is formed of a metallized layer. It is preferable to keep the wettability of the solder high.

  In the example shown in FIGS. 1 and 2, the insulating base 3 is formed with a wiring conductor 5 from the inner side of the recess 3a to the outer peripheral part of the lower surface. The wiring conductor 5 is a conductive path for electrically connecting an electronic component hermetically sealed in the recess 3a to an external electric circuit (not shown).

  The wiring conductor 5 is made of, for example, the same material (tungsten, molybdenum, manganese, copper, silver, palladium, gold, platinum, etc.) as the metal layer 4 and can be attached to the insulating substrate 3 in the same form. .

  For example, the electronic component 7 is bonded to the bottom surface of the recess 3a via a resin adhesive, a brazing material, or the like (not shown) and fixed in the recess 3a, and is wired using an electrical connection means such as a bonding wire 8. The conductor 5 is connected to a portion formed in the recess 3a. If a portion of the wiring conductor 5 formed on the outer peripheral portion of the lower surface of the insulating base 3 is connected to an external electric circuit using a mounting solder (not shown) such as tin-silver solder, an electronic component 7 and an external electric circuit are electrically connected.

  Note that the electronic component 7 may be bonded and fixed to the lower surface side of the lid 1. In this case, the lid 1 is formed of an insulating material such as a ceramic material as described above, and a conductive path (not shown) for connecting the electronic component 7 to an external electric circuit is also provided in the lid 1. You may make it form. The conductive path of the lid can also be formed by the same method using the same material as the wiring conductor 5, for example.

  In the electronic component storage package of the present invention, as described above, at least the outer peripheral portion of the lower surface of the lid 1 is made of a metal material, and the solder layer 2 is joined to the outer peripheral portion. 1st solder layer 2a which has a tin-bismuth alloy phase which has a bismuth phase as a main ingredient, and a 1st solder layer 2a which has a tin bismuth phase as a main ingredient, and is arranged in order from 1 side The second solder layer 2b has a melting point lower than that of one solder layer.

  The metal material constituting the outer peripheral portion of at least the lower surface of the lid 1 is a metallized layer attached to the lid 1 formed of a metal material forming the lid 1 itself or a material other than the metal material as described above. And plating layers, such as nickel, cobalt, iron, gold, silver, copper, platinum, palladium, tungsten, molybdenum, manganese, and aluminum.

  According to such an electronic component storage package, the first solder layer 2a that directly joins the solder layer 2 to the lid 1 has an alloy phase of tin and the metal component of the metal material of the lid 1 as a main component. The melting point is as high as about 400 ° C. due to the action of the metal material. Further, the second solder layer 2b for connecting the lid 1 to the insulating base 3 (actually the soldering metal layer 4 formed on the insulating base 3) has a bismuth phase as a main component and a tin-bismuth alloy phase. And has a melting point lower than that of the first solder layer 2a. Therefore, instead of the conventional lead solder for sealing, sealing with solder that does not contain harmful lead becomes possible.

  That is, since the melting point of bismuth is relatively high at 271 ° C., the second solder layer 2b mainly composed of the bismuth phase can be made to function as a sealing solder layer in the same manner as a conventional lead-based high-temperature solder. In addition, since the second solder layer 2b contains a tin-bismuth phase, the melting point is lower than that of the bismuth phase alone, so that the heating temperature at the time of sealing can be kept low. At the time of sealing, the melting point of the first solder layer 2a is higher than the melting point of the second solder layer 2b due to the action of the metal component of the metal material. Bonding of the solder layer 2 to the lid 1 can be maintained. Furthermore, at the time of sealing, the tin component of the second solder layer 2b can form an alloy phase having a higher melting point than the metal material of the metal layer 4 on the insulating base 3 side and bismuth. Therefore, for example, even when the electronic component 7 is hermetically sealed in an electronic component storage package and then connected to an external electric circuit board using a lead-free solder such as tin-silver, the solder layer 2 (first Neither the second solder layer 2a nor the second solder layer 2b is melted, and the reliability of hermetic sealing is high. Accordingly, the solder layer 2 joined to the lid 1 does not contain lead, and the electronic component has high hermetic sealing reliability when the lid 1 is joined to the insulating base 3 via the solder layer 2. A sealing package can be provided.

  The first solder layer 2a is mainly composed of an alloy phase of tin and a metal component of the metal material of the lid 1, and the melting point of the conventional lead-based high-temperature solder is as described above due to the action of the metal component. It is higher than the melting point.

  The second solder layer 2 b is formed with a composition such that substantially all of the tin component forms an alloy phase with the metal material of the metal layer 4 when bonded to the metal layer 4 of the insulating base 3.

  As the second solder layer 2b having such a composition, for example, a bismuth-tin solder containing about 2 to 5% by mass of a tin component and tin constituting a bismuth-tin phase can be cited. In the above composition, the tin component may be partially contained as a tin phase or an alloy phase of tin and a metal material. Further, the bismuth-tin solder having the above composition may contain an alloy phase of bismuth and a metal component of the metal material.

  Such a solder layer 2 can be bonded to the lid 1 (metal material of the lid 1) by the following method, for example.

  That is, for example, a lid 1 made of, for example, an iron-nickel alloy is prepared, and a paste (not shown) of bismuth-tin solder containing about 6 to 10% by mass of tin is applied to the outer peripheral portion of the lower surface thereof. If the lid 1 coated with this paste is heated at 280 to 300 ° C. for about 1 to 2 minutes, the tin component of the bismuth-tin solder and the metal component of the metal material of the lid 1 are bonded to each other at the joint interface portion. An alloy phase of a tin-metal component is formed, and the solder layer 2 is joined to the lid 1. Moreover, the 2nd solder layer 2b of the joined solder layer 2 becomes a composition containing about 2-5 mass% of the above tin components by diffusion of a tin component.

  In the example shown in FIG. 1, the solder layer 2 is formed in a frame shape so as to face the metal layer 4 surrounding the recess 3 a, but it may be further spread inwardly and bonded to the lower surface of the lid 1. You may make it join to the whole surface. When the solder layer 2 is joined to the entire lower surface of the lid 1, precise positioning is not required when applying a solder paste, which is advantageous in increasing productivity.

  In the electronic component storage package of the present invention, when the metal material of the lid 1 is at least one of nickel, cobalt, iron, gold, silver, copper, platinum and palladium in the above configuration, the package is hermetically sealed. It is possible to increase the reliability of stopping more reliably, and it is possible to provide an electronic component storage package with good practicality as an electronic component storage package.

  That is, it is easy to form an alloy phase of the metal material and tin, and the melting point can be more reliably increased as described above. In addition, these metal materials are produced on the outer peripheral portion of the lower surface of the lid 1 when the lid 1 is produced by itself or the lid 1 is made of a material other than the metal material, for example, a metallized layer or a plating layer. It is easy to deposit in the form of (not shown). Therefore, in this case, it is possible to provide an electronic component storage package with high reliability and practicality of hermetic sealing. For example, nickel, cobalt, or iron is used as a material for forming the lid 1 itself, and gold, silver, copper, platinum, or palladium is used to coat a metallized layer on the lower surface of the lid 1 made of a ceramic material or the like. Used as a plating layer.

  Among these metal materials, nickel, copper and gold are easy to deposit as a plating layer, and because the wettability when joining the solder layer 2 by applying and melting the solder paste is good, Particularly preferred.

  Then, the lid 1 and the metal layer 4 of the insulating base 3 are joined via the solder layer 2, the recess 3a is closed with the lid 1, and the electronic component 7 is hermetically sealed in the recess 3a. It is formed.

  As described above, the electronic device of the present invention has the recess 3a on the upper surface for hermetically sealing and housing the electronic component 7, and the insulating base 3 on which the metal layer 4 surrounding the recess 3a is formed, and the recess 3a. The electronic component 7 housed in the inside and the lid 1 having at least the outer periphery of the lower surface made of a metal material are provided, and the metal layer 4 of the insulating base 3 and the metal material of the lid 1 are interposed via the solder joint layer 6. The concave portion 3a is hermetically sealed by being joined.

  The solder joint layer 6 is formed, for example, by joining the solder layer 2 in the electronic component storage package of the present invention to the metal layer 4 of the insulating base 3.

  In this electronic device, the solder joint layer 6 that joins the lid 1 and the insulating base 3 is composed mainly of an alloy phase of tin and a metal component of a metal material, which is arranged in order from the lid 1 side. An alloy phase of the first bonding layer 6a, the second bonding layer 6b having a bismuth phase as a main component and containing a tin-bismuth alloy phase and having a melting point lower than that of the first bonding layer 6a, and the metal component of tin and the metal layer 4 And a third bonding layer 6c having a melting point higher than that of the second bonding layer 6b.

  In the electronic device of the present invention, since the solder bonding layer 6 is composed of the first to third bonding layers 6a to 6c having the above-described configuration, the lead-free solder bonding layer is provided in the same manner as the electronic component storage package of the present invention. 6 can be hermetically sealed.

  The second bonding layer 6b mainly composed of a bismuth phase does not contain a tin-bismuth alloy phase having a low melting point, and the melting point of bismuth is relatively high. It can function as a main bonding layer for bonding the substrate 3. For example, even when this electronic device is connected (mounted) to an external electric circuit using lead-free solder such as tin-silver, the second bonding layer 6b does not melt. Further, since the first and third bonding layers 6a and 6c have melting points higher than those of the second bonding layer 6b, they are not melted during mounting. Therefore, an electronic device with high hermetic sealing reliability can be provided. The first and third bonding layers 6a and 6c have high melting points as described above due to the action of the metal material that forms an alloy phase with tin.

  The configurations of the lid 1 and the insulating base 3, and the metal layer 4 and the wiring conductor 5 that are formed on the insulating base 3 are the same as those of the electronic component storage package described above. It can be manufactured in a similar manner.

  Further, the first bonding layer 6a of the bonding layer 6 is mainly composed of an alloy phase of tin and the metal component of the metal material of the lid 1, and is entirely composed of an alloy phase of a tin-metal component. It may be a bismuth phase or an alloy phase of bismuth and the above metal component.

  The third bonding layer 6c is mainly composed of an alloy phase of tin and the metal component of the metal layer 4, and all of it may be composed of an alloy phase of a tin-metal component. It may contain a certain degree of bismuth phase or an alloy phase of bismuth and the above metal component.

  The first bonding layer 6a and the third bonding layer 6c are layers that bond the bonding layer 6 to the lid body 1 (metal material of the lid body 1) and the metal layer 4 of the insulating base 3, respectively, for storing electronic components. Similar to the first solder layer 2a in the package, the melting point is higher than that of the conventional lead-based high-temperature solder due to the action of the metal component.

  The metal material that forms an alloy phase with tin in the first and third bonding layers 6a, 6c is, for example, nickel, cobalt, iron, gold, silver, copper, like the first solder layer 2a in the electronic component storage package. Platinum, palladium, tungsten, molybdenum, manganese, aluminum and the like.

  The second bonding layer 6b is formed by bonding the lid 1 (metal material) and the insulating base 3 (metal layer 4) to the solder layer 2 previously bonded to the lid 1 to the metal layer 4 so as to form the recess 3a. It is the main bonding material when hermetically sealing. That is, the lid body 1 and the insulating base 3 are bonded together via the second bonding layer 6b mainly composed of a bismuth phase and having a melting point as high as about bismuth (about 271 ° C.). A highly reliable electronic device is formed.

  The second bonding layer 6b may be entirely formed of a bismuth phase, or may include an alloy phase of the metal material of the lid 1 or the metal material of the metal layer 4 and bismuth.

  An electronic device in which the lid 1 and the insulating base 3 are bonded via the bonding layer 6 as described above, for example, first prepares the electronic component storage package of the present invention, and then the recess 3 a of the insulating base 3. The electronic component 7 is accommodated therein, and the electronic component 7 is electrically connected to the wiring conductor 5 by the bonding wire 8 or the like. Next, the solder layer 2 bonded to the outer peripheral portion of the lower surface of the lid 1 is attached to the insulating base 3. They can be manufactured by positioning them facing the metal layer 4 on the upper surface and then heating them in a furnace.

  In this case, if the configuration of the solder layer 2 includes the second solder layer 2b containing about 2 to 5% by mass of the tin component and tin constituting the bismuth-tin alloy phase as described above, for example, What is necessary is just to set the heating conditions in a furnace at about 280-300 degreeC for about 1-2 minutes. Under this condition, the tin component of the second solder layer 2b can react well with the metal component of the metal layer 4 to form an alloy phase, and the second bonding layer 6b after the bonding can be formed into the bismuth as described above. It can be set as the composition which has a phase as a main component.

  Further, in this case, since a tin-bismuth alloy phase or a tin phase is present, the start of bonding from a relatively low heating temperature increases the wettability of the solder layer 2 to the metal layer 4, and the third bonding having a high melting point. The lid 1 and the insulating substrate 3 can be joined by the joining layer 6 having the layer 6c. As a result, the bonding layer 6 after bonding (particularly the second bonding layer 6b) has a higher melting point than the solder layer 2 before bonding (particularly the second solder layer 2b).

  In the electronic device, the metal component of the metal material of the lid 1 and the metal component of the metal layer 4 of the insulating base 3 are at least nickel, cobalt, iron, gold, silver, copper, platinum, and palladium. In the case of one type, as in the case of the electronic component storage package of the present invention, the reliability of hermetic sealing can be increased more reliably, and the practicality as an electronic device is also good. An electronic device can be provided.

  In addition, these metal materials are produced on the outer peripheral portion of the lower surface of the lid 1 when the lid 1 is produced by itself or the lid 1 is made of a material other than the metal material, for example, a metallized layer or a plating layer. It is easy to deposit in the form of. Therefore, in this case, an electronic device with high reliability and practicality of hermetic sealing can be provided.

  A rectangular parallelepiped insulating substrate having a concave portion on the upper surface is made of an aluminum oxide sintered body, a lid made of an iron-nickel alloy is made, and a nickel plating layer is deposited on the entire surface, and then the lid The solder layer was joined to the outer peripheral part of the lower surface of the body, and the electronic component storage package of an Example was produced.

  For the solder layer, bismuth-tin solder containing 6% by mass of tin was bonded to the lid by applying the paste and heating (conditions at 290 ° C. for 1 minute).

  The first solder layer of the solder layer was mainly composed of a tin-nickel alloy phase and contained nickel. Further, according to WDS analysis, the second solder layer contained a small amount of tin-bismuth alloy phase in the bismuth phase.

  The insulating substrate has a dimension of about 3 × 5.5 mm in plan view, a height of about 1 mm, a depth of the concave portion of about 0.7 mm, and a tungsten metallization in a frame shape around the concave portion on the upper surface. A metal layer having a thickness of about 15 μm was formed by the layer. The lid had a dimension similar to that of the insulating substrate in plan view and a thickness of about 0.3 mm.

  Regarding the electronic component storage package of this example, the lid was joined to the insulating base via the solder layer, and then the reliability of the hermetic sealing was confirmed by a helium leak test. The joining conditions were 290 ° C. and 1 minute. The number of tests was 100.

  As a comparative example, a conventional electronic component storage package in which lead-tin solder was joined to a lid was prepared, and the reliability of hermetic sealing was confirmed in the same manner as in the above example.

  As a result, it was confirmed that no leakage failure occurred in the electronic component storage package of 100 tested examples (electronic device after hermetic sealing), and the reliability of hermetic sealing was high. It was done. In addition, the electronic component storage package of the comparative example did not cause a leak failure as in the case of the electronic component storage package of the example. However, since the bonding layer contains lead, it has an adverse effect on the environment. It was to give.

DESCRIPTION OF SYMBOLS 1 ... Lid 2 ... Solder layer 2a ... 1st solder layer 2b ... 2nd solder layer 3 ... Insulation base 3a ... Recess 4 ... Metal layer 5 ... Wiring conductor 6 ... .. Solder joint layer 6a .. First joint layer 6b .. Second joint layer 6c .. Third joint layer 7... Electronic component 8.

Claims (3)

A lid body that has a recess for hermetically sealing and storing an electronic component on the upper surface and is bonded to an insulating substrate formed with a metal layer surrounding the recess, and hermetically seals the recess, the lid body The outer peripheral portion of at least the lower surface is made of a metal material that is at least one of nickel, cobalt, iron, gold, silver, platinum and palladium, and the outer peripheral portion is coated with a solder layer, A first solder layer mainly composed of an alloy phase of tin and a metal component of the metal material, disposed in order from the metal material side; and tin-bismuth containing 2 to 5% by mass of tin based on a bismuth phase. A lid comprising an alloy phase and a second solder layer having a melting point lower than that of the first solder layer. A method of manufacturing a lid body having a recess for hermetically sealing and storing an electronic component on an upper surface and bonded to an insulating substrate formed with a metal layer surrounding the recess, and hermetically sealing the recess,
Bismuth containing 6 to 10% by mass of tin in the metal material portion of the plate-like material having at least one outer peripheral part of the lower surface made of a metal material of at least one of nickel, cobalt, iron, gold, silver, platinum and palladium A first solder layer comprising a first solder layer containing, as a main component, an alloy phase of the metal material and the tin, and a tin-bismuth alloy phase containing 2 to 5% by mass of tin; The manufacturing method of the lid which forms the 2nd solder layer whose melting point is lower than this. An insulating base having a recess for hermetically sealing and storing an electronic component on the upper surface and having a metal layer surrounding the recess, the electronic component stored in the recess, and at least the outer periphery of the lower surface is a metal A lid made of a material, wherein the metal layer of the insulating base and the metal material of the lid are bonded via a bonding layer, and the recess is hermetically sealed. And
The metal layer that is at least one of nickel, cobalt, iron, gold, silver, platinum, and palladium of the insulating base is brought into contact with the second solder layer of the lid body according to claim 1, and the second solder layer A first bonding layer composed of the first solder layer, the main component of which is an alloy phase of tin and the metal component of the metal material, and a bismuth phase as a main component. The second bonding layer having a melting point lower than that of the first bonding layer and higher than that of the second solder layer, and an alloy phase of tin and a metal component of the metal layer as a main component. A method for manufacturing an electronic device, comprising: forming a bonding layer including a third bonding layer having a melting point higher than that of the bonding layer.

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