JPS6323650B2 - - Google Patents

Info

Publication number
JPS6323650B2
JPS6323650B2 JP59005433A JP543384A JPS6323650B2 JP S6323650 B2 JPS6323650 B2 JP S6323650B2 JP 59005433 A JP59005433 A JP 59005433A JP 543384 A JP543384 A JP 543384A JP S6323650 B2 JPS6323650 B2 JP S6323650B2
Authority
JP
Japan
Prior art keywords
gas
silane
cylinder
film
clusters
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59005433A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59224119A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP59005433A priority Critical patent/JPS59224119A/ja
Publication of JPS59224119A publication Critical patent/JPS59224119A/ja
Publication of JPS6323650B2 publication Critical patent/JPS6323650B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
JP59005433A 1984-01-16 1984-01-16 被膜作製方法 Granted JPS59224119A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59005433A JPS59224119A (ja) 1984-01-16 1984-01-16 被膜作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59005433A JPS59224119A (ja) 1984-01-16 1984-01-16 被膜作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55129641A Division JPS6024180B2 (ja) 1980-09-18 1980-09-18 被膜作製方法

Publications (2)

Publication Number Publication Date
JPS59224119A JPS59224119A (ja) 1984-12-17
JPS6323650B2 true JPS6323650B2 (en:Method) 1988-05-17

Family

ID=11611058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59005433A Granted JPS59224119A (ja) 1984-01-16 1984-01-16 被膜作製方法

Country Status (1)

Country Link
JP (1) JPS59224119A (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295167A (ja) * 1988-05-23 1989-11-28 Jidosha Kiki Co Ltd 車輪速度の異常検出装置
JPH0280964A (ja) * 1988-09-16 1990-03-22 Nippon Denso Co Ltd 車輪速信号処理装置
WO1992015005A1 (fr) * 1991-02-18 1992-09-03 Osaka Sanso Kogyo Kabushiki-Kaisha Appareil pour l'echantillonnage des gaz

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3805282A1 (de) * 1988-02-19 1989-08-31 Wacker Chemitronic Verfahren zur entfernung von n-dotierenden verunreinigungen aus bei der gasphasenabscheidung von silicium anfallenden fluessigen oder gasfoermigen stoffen
JP3061811B2 (ja) * 1988-04-15 2000-07-10 松下電器産業株式会社 非単結晶薄膜の作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295167A (ja) * 1988-05-23 1989-11-28 Jidosha Kiki Co Ltd 車輪速度の異常検出装置
JPH0280964A (ja) * 1988-09-16 1990-03-22 Nippon Denso Co Ltd 車輪速信号処理装置
WO1992015005A1 (fr) * 1991-02-18 1992-09-03 Osaka Sanso Kogyo Kabushiki-Kaisha Appareil pour l'echantillonnage des gaz

Also Published As

Publication number Publication date
JPS59224119A (ja) 1984-12-17

Similar Documents

Publication Publication Date Title
US5645947A (en) Silicon-containing deposited film
JPS6237527B2 (en:Method)
CN103668453B (zh) 一种二维硅烯薄膜及其制备方法
JPH036652B2 (en:Method)
JPS6323650B2 (en:Method)
JPH0325929B2 (en:Method)
JP3432601B2 (ja) 成膜方法
JPS621565B2 (en:Method)
David et al. RF plasma synthesis of amorphous AIN powder and films
JPS6243536B2 (en:Method)
JPS5895550A (ja) 非単結晶半導体層形成用装置
JPS6024180B2 (ja) 被膜作製方法
JP2626701B2 (ja) Ｍｉｓ型電界効果半導体装置
JPH0324775B2 (en:Method)
TW594853B (en) The manufacturing method of diamond film and diamond film
JP2573125B2 (ja) 高圧容器に容れられた半導体製造用ガス
JPH02102531A (ja) 窒化シリコン・ホウ素層の製造方法
JPH02262324A (ja) Ｘ線透過膜およびその製造方法
KR101916289B1 (ko) 탄화규소 증착 방법
JPS6318856B2 (en:Method)
JPH0364466A (ja) アモルファスシリコン系半導体膜の製法
JPS6236632B2 (en:Method)
JPS58175824A (ja) プラズマ気相反応用装置
JPS61267315A (ja) プラズマｃｖｄ装置
JPH0337731B2 (en:Method)