JPS6323386A - 半導体レ−ザ装置の組立方法 - Google Patents

半導体レ−ザ装置の組立方法

Info

Publication number
JPS6323386A
JPS6323386A JP16634587A JP16634587A JPS6323386A JP S6323386 A JPS6323386 A JP S6323386A JP 16634587 A JP16634587 A JP 16634587A JP 16634587 A JP16634587 A JP 16634587A JP S6323386 A JPS6323386 A JP S6323386A
Authority
JP
Japan
Prior art keywords
laser element
semiconductor laser
width
bonding agent
heat dissipation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16634587A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0156555B2 (enExample
Inventor
Hirokazu Fukuda
福田　広和
Koji Shinohara
篠原　宏爾
Yoshio Kawabata
川端　良雄
Yoshito Nishijima
西嶋　由人
Kosaku Yamamoto
山本　功作
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16634587A priority Critical patent/JPS6323386A/ja
Publication of JPS6323386A publication Critical patent/JPS6323386A/ja
Publication of JPH0156555B2 publication Critical patent/JPH0156555B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
JP16634587A 1987-07-02 1987-07-02 半導体レ−ザ装置の組立方法 Granted JPS6323386A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16634587A JPS6323386A (ja) 1987-07-02 1987-07-02 半導体レ−ザ装置の組立方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16634587A JPS6323386A (ja) 1987-07-02 1987-07-02 半導体レ−ザ装置の組立方法

Publications (2)

Publication Number Publication Date
JPS6323386A true JPS6323386A (ja) 1988-01-30
JPH0156555B2 JPH0156555B2 (enExample) 1989-11-30

Family

ID=15829655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16634587A Granted JPS6323386A (ja) 1987-07-02 1987-07-02 半導体レ−ザ装置の組立方法

Country Status (1)

Country Link
JP (1) JPS6323386A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108867U (enExample) * 1990-02-21 1991-11-08
US7781603B2 (en) 2004-09-30 2010-08-24 Toyo Boseki Kabushiki Kaisha Method for producing trimethylsilyl azide

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51134377U (enExample) * 1975-04-18 1976-10-29
JPS5220782A (en) * 1975-08-11 1977-02-16 Nippon Telegr & Teleph Corp <Ntt> Semi-conductor element mounting method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51134377U (enExample) * 1975-04-18 1976-10-29
JPS5220782A (en) * 1975-08-11 1977-02-16 Nippon Telegr & Teleph Corp <Ntt> Semi-conductor element mounting method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108867U (enExample) * 1990-02-21 1991-11-08
US7781603B2 (en) 2004-09-30 2010-08-24 Toyo Boseki Kabushiki Kaisha Method for producing trimethylsilyl azide

Also Published As

Publication number Publication date
JPH0156555B2 (enExample) 1989-11-30

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