JPS63225600A - SiCウイスカ−の製造方法 - Google Patents

SiCウイスカ−の製造方法

Info

Publication number
JPS63225600A
JPS63225600A JP5879087A JP5879087A JPS63225600A JP S63225600 A JPS63225600 A JP S63225600A JP 5879087 A JP5879087 A JP 5879087A JP 5879087 A JP5879087 A JP 5879087A JP S63225600 A JPS63225600 A JP S63225600A
Authority
JP
Japan
Prior art keywords
sulfur
whiskers
sic whiskers
raw material
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5879087A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03359B2 (cg-RX-API-DMAC7.html
Inventor
Toru Kida
喜田 徹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Priority to JP5879087A priority Critical patent/JPS63225600A/ja
Publication of JPS63225600A publication Critical patent/JPS63225600A/ja
Publication of JPH03359B2 publication Critical patent/JPH03359B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP5879087A 1987-03-16 1987-03-16 SiCウイスカ−の製造方法 Granted JPS63225600A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5879087A JPS63225600A (ja) 1987-03-16 1987-03-16 SiCウイスカ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5879087A JPS63225600A (ja) 1987-03-16 1987-03-16 SiCウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS63225600A true JPS63225600A (ja) 1988-09-20
JPH03359B2 JPH03359B2 (cg-RX-API-DMAC7.html) 1991-01-07

Family

ID=13094367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5879087A Granted JPS63225600A (ja) 1987-03-16 1987-03-16 SiCウイスカ−の製造方法

Country Status (1)

Country Link
JP (1) JPS63225600A (cg-RX-API-DMAC7.html)

Also Published As

Publication number Publication date
JPH03359B2 (cg-RX-API-DMAC7.html) 1991-01-07

Similar Documents

Publication Publication Date Title
CN101489923B (zh) 氮化碳的制备方法
CN102199872B (zh) 一种纤维表面原位生长碳纳米管的方法
WO2002081371A3 (en) Chemical vapor deposition growth of single-wall carbon nanotubes
US4492681A (en) Method for the preparation of silicon carbide fibers
DE69905749D1 (de) Verfahren zur herstellung volumeneinkristallen aus silizium-karbid
JPH04222228A (ja) コイル状炭素繊維の製造方法
ATE411327T1 (de) Verfahren zur herstellung schwefelhaltiger organosiliziumverbindungen
KR890016089A (ko) 질화붕소의 전구물질인 붕소 및 질소기재의 중합체 제법
Yang et al. In situ growth of SiC nanowires on RS-SiC substrate (s)
JP3817703B2 (ja) コイル状炭素繊維の製造方法及び製造装置
US5211801A (en) Method for manufacturing single-crystal silicon carbide
JPS63225600A (ja) SiCウイスカ−の製造方法
KR920701535A (ko) 화학적 증착(cvd)으로 성장된 천이금속 탄화물 및 질화물 휘스커
JPH0476359B2 (cg-RX-API-DMAC7.html)
KR890701467A (ko) 질화알루미늄의 제조방법
JP2696778B2 (ja) 単結晶炭化珪素の製造方法
JP2604753B2 (ja) 炭化ケイ素ウイスカーの製造方法
JPH03356B2 (cg-RX-API-DMAC7.html)
Li et al. High‐purity stoichiometric Si3N4 ceramics through trimethylsilyl‐substituted polysilazanes
JPS62162699A (ja) 炭素質ウイスカの製造方法
JPS58156512A (ja) 微小炭素繊毛が密生した繊維状炭素材
JPH03360B2 (cg-RX-API-DMAC7.html)
JPS61136992A (ja) 鉄ペンタカルボニルから誘導される核を使用するグラフアイトフアイバーの成長
Arizumi Some Aspects of the Epitaxial Vapor Growth of Semiconductors: Elements, III--V Compounds and Alloys
JPH0196098A (ja) 炭素質ウィスカの製造方法