JPS63224249A - High-frequency integrated circuit - Google Patents

Abstract

PURPOSE:To obtain a small-sized high-frequency integrated circuit having a decreased area occupied by a capacitor, by providing a capacitor pattern on a semiconductor substrate such that the capacitor pattern has a layered structure consisting of multiple layers of electrodes and of insulators. CONSTITUTION:A signal applied to an input signal terminal 4 is amplified by a high-frequency transistor 1 and outputted from an output signal terminal 5. A capacitor 31 has a layered structure in which insulator layers 303 are provided between one type of electrodes 301 and the other type of electrodes 302. The capacitor 31 having such layered structure can provide as large a capacitance as in the case where a multiplicity of capacitors are connected in parallel. Accordingly, the area occupied by the capacitor pattern can be decreased substantially.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a high frequency band integrated circuit.

[Conventional technology]

Hereinafter, a monolithic microwave integrated circuit amplifier (MMIC amplifier) will be explained as an example of a high frequency integrated circuit.

FIG. 3 is a plan view showing an example of a conventional MMIC amplifier. In this figure, 1 is a high frequency transistor, 2 is a resistor, 3 is a capacitor, 4 is an input signal terminal, 5 is an output signal terminal, and 6 is a DC bias application terminal of the high frequency transistor 1.

Next, the operation of the MMIC amplifier will be explained. A signal applied to the input signal terminal 4 is amplified by the high frequency transistor 1 and taken out from the output signal terminal 5. Here, a DC bias for operating the high frequency transistor 1 is supplied from a DC bias application terminal 6. The capacitor 3 and the resistor 2 are used to impedance match the output impedance of the high frequency transistor 1 to a predetermined characteristic impedance.

(Problem to be Solved by the Invention 1) In the conventional MMIC amplifier configured as described above, a capacitor of large capacity is required depending on the characteristics required of the amplifier and the frequency of use.As a result, the area of the capacitor is As a result, most of the MMIC amplifier patterns are capacitor patterns, resulting in problems such as increased costs due to the larger area of the MMIC chip and difficulty in designing an MMIC circuit due to the large area capacitor pattern arrangement.

The present invention was made to solve the above-mentioned problems, and an object of the present invention is to obtain a compact high-frequency integrated circuit in which the area occupied by the capacitor is reduced.

(Means for Solving the Problems) In the high frequency integrated circuit according to the present invention, a capacitor pattern formed on a semiconductor substrate has a laminated structure composed of multilayer electrodes and insulators.

[Effect]

In this invention, since the capacitor has a laminated structure, a large capacity similar to that obtained by connecting a large number of capacitors in parallel can be obtained, and the area occupied by the capacitor pattern can be reduced.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a plan view of an MMIC amplifier showing an embodiment of the present invention, and FIG. 2 is an enlarged sectional view of the main part of FIG.

In FIG. 1, numeral 31 is a laminated capacitor according to the present invention, and FIG. 2 shows a detailed sectional view of that part.

As shown in FIG. 2, one electrode 30 of the capacitor 31
An insulator 303 is formed between 1 and the other electrode 3020,
These are layered structures.

The capacitor 31 formed in this way has a pair of electrodes 3
01.302 and the insulator 303 are connected in parallel, and the capacitance increases by the number of times of lamination. therefore,
Compared to conventional single-layer parallel plate capacitors, it is possible to obtain a specified capacitance with a smaller electrode area, and MM
Downsizing of the IC amplifier can be easily achieved.

Although the above embodiment has been described with reference to an MMIC amplifier, the present invention is not limited to this, and it goes without saying that the same effect can be achieved even if the present invention is applied to other high frequency integrated circuits.

〔Effect of the invention〕

As explained above, in this invention, among the electric circuit components formed on the integrated circuit board, the capacitor has a laminated structure consisting of multilayer electrodes and insulators, so the capacitor pattern can be reduced, and the size can be reduced. This has the effect of providing a low-cost high-frequency integrated circuit.

[Brief explanation of drawings]

FIG. 1 is a plan view showing a chip pattern of an MMIC amplifier according to an embodiment of the present invention, FIG. 2 is an enlarged sectional view showing details of the main parts of FIG. 1, and FIG. 3 is a chip of a conventional MMIC amplifier. FIG. 3 is a plan view showing a pattern. In the figure, 1 is a high frequency transistor, 2 is a resistor, 4 is an input signal terminal, 5 is an output signal terminal, 6 is a DC bias application terminal of the transistor, 31 is a laminated capacitor, 301 is one electrode of the capacitor, 302 is the other electrode of the capacitor, and 303 is an insulator forming the capacitor. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 Figure 2 Figure 3

Claims (1)

[Claims] A high-frequency integrated circuit in which electric circuit components such as high-frequency transistors, resistors, and capacitors are formed on the same integrated circuit board, characterized in that the capacitor has a laminated structure composed of multilayer electrodes and insulators. .