JPH04261206A - Amplifier - Google Patents

Abstract

PURPOSE:To reduce the chip size and to attain high yield when active elements are manufactured as semiconductor chips for a 1st substrate by mounting all active elements with low yield collectively onto the 1st substrate and mounting only passive circuit elements onto a 2nd substrate. CONSTITUTION:FETs 9, 10, 11 as active circuit elements are mounted onto a 1st substrate 1 and also other passive circuit elements 12, 13, 14. An output circuit 3 is also arranged on the 1st printed circuit board 1. Only the passive circuit elements 12, 13, 14 are arranged on a 2nd substrate 2. A connection bonding pad 4 is provided respectively to the 1st and 2nd substrates 1, 2, and prescribed positions are connected by a connection gold wire 5. The 1st substrate 1 is provided with active circuit elements and passive circuit elements being components of an input inter-stage matching circuit and a bias circuit or the like, and all active elements with low yield are mounted concentratingly onto the 1st substrate 1, then the chip size in the case of production of semiconductor chips is reduced and high yield is attained.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an amplifier, for example, a semi-microwave or microwave band semiconductor amplifier used in satellite communications, terrestrial microwave communications, mobile communications, etc.

0002

2. Description of the Related Art FIG. 5 shows, for example, "Broadband monolithic amplifier using dual frequency resonant bias circuit" by Mochizuki et al.
1990 Spring National Conference of the Institute of Electronics and Information Engineers, PP2-478
, and FIG. 6 is a pattern layout diagram of the conventional microwave semiconductor amplifier shown in FIG.
T, 10 is the second FET, 11 is the third FET, 12 is the MIM capacitor, 13 is the spiral inductor, 14
1 is a thin film resistor, 15 is a gate bias terminal, and 16 is a drain bias terminal.

Next, the operation will be explained. A microwave or quasi-microwave signal input from the input terminal 7 is amplified by the first FET 9, the second FET 10, and the third FET 11, and output from the output terminal 8. The MIM capacitor 12, spiral inductor 13, and thin film resistor 14 constitute an input matching circuit, an output matching circuit, an interstage matching circuit, a bias circuit, and the like. A gate bias voltage and a drain bias voltage are applied to the gate bias terminal 15 and the drain bias terminal 16. a first FE that is an active circuit element;
T9, second FET 10, third FET 11, and passive circuit elements such as MIM capacitor 12, spiral inductor 13, and thin film resistor 14 are formed on the same semiconductor substrate 6.

0004

[Problems to be Solved by the Invention] Conventional microwave semiconductor amplifiers have active circuit elements, input matching circuits,
Passive circuit elements that make up the interstage matching circuit, bias circuit, output circuit, etc. are constructed on a single semiconductor substrate, so when constructing an amplifier in a relatively low frequency band, the chip size becomes large and the yield decreases. Cost increases. In addition, when manufacturing several types of amplifiers that use different frequency bands, it is necessary to completely replace the semiconductor substrate including active circuit elements and passive circuit elements, and the yield of the amplifier decreases due to the influence of the low-yield active circuit elements. Furthermore, since the output circuit of the final stage amplifier is configured as a monolithic microwave integrated circuit on a semiconductor substrate, the circuit loss of the output circuit components such as the microstrip line and spiral inductor is large, resulting in a decrease in output and efficiency. There was a problem.

[0005] This invention was made to solve the above-mentioned problems, and it has a high yield and can easily produce several types of amplifiers with different usable frequency bands at low cost.
The purpose is to obtain an amplifier with good output and efficiency characteristics.

[0006]

[Means for Solving the Problems] The amplifier according to the first invention includes active circuit elements such as FETs and input/output elements on a first substrate.
The first substrate has a part of passive circuit elements constituting an inter-stage matching circuit, a bias circuit, etc., the second substrate has passive circuit elements constituting an input/inter-stage matching circuit, a bias circuit, etc.
Predetermined locations on the second substrate are connected by connection means such as gold wires.

[0007] The amplifier according to the second invention has active circuit elements such as FETs and some passive circuit elements constituting input/interstage matching circuits, bias circuits, etc. on the first substrate; The substrate has passive circuit elements constituting input/interstage matching circuits, bias circuits, etc., the output circuit is configured on the third substrate, and predetermined parts of the first, second, and third substrates are covered with gold. The connection is made by a connecting means such as a wire.

[0008]

[Operation] In the first invention, the size of the first substrate constituting the low-yield active circuit element is reduced;
substrates can be manufactured with high yield, improving the yield of amplifiers. Furthermore, in the second invention, by replacing the second and third substrates that determine the frequency characteristics, several types of amplifiers that use different frequency bands can be easily manufactured at low cost. Furthermore, when the output circuit is configured on a dielectric substrate, the circuit loss of the output circuit components such as microstrip lines and spiral inductors is small, and the output and
Increased efficiency.

[0009]

[Example] Example 1. An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a pattern layout diagram, in which 1 is a first substrate, 2 is a second substrate, 4 is a bonding pad for connection, and 5 is a gold wire for connection. This embodiment is electrically equivalent to a conventional microwave semiconductor amplifier and its operation is similar to that of a conventional microwave semiconductor amplifier. first substrate 1
, FETs 9, 10, and 11 are collected as active circuit elements, and other passive circuit elements 12, 13,
14 are also arranged. Additionally, in this example, the output circuit 3 is also arranged on the first substrate 1. Furthermore, only passive circuit elements 12, 13, and 14 are arranged on the second substrate 2. In this way, by concentrating all active elements with low yields on the first substrate, the chip size is reduced when the first substrate is produced as a semiconductor chip, and a high yield can be achieved.

Example 2. Next, another embodiment of the first invention will be described. FIG. 2 is a pattern layout diagram, in which 1 is a first substrate, 2 is a second substrate, 3 is an output circuit, 4 is a bonding pad for connection, and 5 is a gold wire for connection. This embodiment is electrically equivalent to the microwave semiconductor amplifier shown in FIG. 1, and the output circuit 3 is placed on the second substrate side.

Further, another embodiment of the first invention will be described with reference to FIG. In this example, the output circuit shown in FIGS. 1 and 2 is configured as the second substrate 2. When the output circuit is provided on a separate substrate in this way, there is also the advantage that the circuit loss of the output circuit, such as a microstrip line or a spiral inductor, is reduced.

Example 3. Next, an embodiment of the second invention will be described. FIG. 4 is a pattern layout diagram according to the second invention, and in the figure, 1 is a first substrate, 2 is a second substrate, and 3 is a third substrate. This figure shows a monolithic microwave integrated circuit that integrates active circuit elements and passive circuit elements such as FETs and transistors on a semiconductor substrate, and a microwave integrated circuit that configures various passive circuit elements by providing a metal film on a dielectric substrate. In a microwave semiconductor amplifier realized as a hybrid integrated circuit of wave integrated circuits, a first substrate, an input and It has a second substrate that constitutes an interstage matching circuit and a bias circuit, and a third substrate that constitutes an output circuit, and connects predetermined locations of the first, second, and third substrates with connection means such as gold wires. This figure shows an example of a microwave semiconductor amplifier characterized in that it is connected by. Furthermore, in this microwave semiconductor amplifier, by using a semiconductor substrate as the first substrate, a semiconductor substrate or a dielectric substrate as the second substrate, and a dielectric substrate as the third substrate, the circuit loss of the output circuit is reduced. , improves the output and efficiency of the amplifier. Also, the second
The third substrate has a circuit for determining frequency characteristics, and by replacing the second and third substrates, it is possible to manufacture amplifiers that use different frequency bands.

[0013] In the above embodiment, a microwave semiconductor amplifier has been described, but the invention is not limited to microwaves, and radio waves of other frequencies may be used. Further, the present invention is not limited to semiconductors, and the first substrate, second substrate, and third substrate may be semiconductor substrates, dielectric substrates, or other substrates.

[0014]

[Effects of the Invention] As described above, according to the first and second inventions, the size of the first substrate constituting the active circuit element with low yield is reduced, and the first substrate can be manufactured with high yield. , the yield of amplifiers is improved. Further, according to the second invention, by replacing the second and third substrates that determine the frequency characteristics, it is possible to easily manufacture several types of amplifiers with different operating frequency bands at low cost, and furthermore, the output circuit can be If configured on the body board, microstrip line,
This has the effect of reducing circuit loss in output circuit components such as spiral inductors and improving output and efficiency.

[Brief explanation of the drawing]

FIG. 1 is a pattern diagram of a microwave semiconductor amplifier according to an embodiment of the first invention.

FIG. 2 is a diagram showing another embodiment of the first invention.

FIG. 3 is a diagram showing another embodiment of the first invention.

FIG. 4 is a diagram showing an embodiment of the second invention.

FIG. 5 is an equivalent circuit diagram of a conventional microwave semiconductor amplifier.

FIG. 6 is a pattern diagram of a conventional microwave semiconductor amplifier.

[Explanation of symbols]

1 First board 2 Second board 3 Third board 4 Bonding pad for connection 5 Gold wire for connection 6 Semiconductor substrate 7 Input terminal 8 Output terminal 9 First FET 10 Second FET 11 Third FET 12 MIM capacitor 13 Spiral inductor 14 Thin film resistor 15 Gate bias terminal 16 Drain bias terminal

Claims (2)

[Claims] 1. An amplifier having the following elements: (a) a first substrate having at least active circuit elements such as FETs and transistors; (b) a second substrate having passive circuit elements such as capacitors, inductors, and resistors; , (c) connection means for connecting predetermined circuits and elements of the first and second substrates. 2. An amplifier having the following elements: (a) a first substrate having at least active circuit elements such as FETs and transistors; (b) a second substrate having passive circuit elements such as capacitors, inductors, and resistors; , (c) a third substrate having an output circuit, and (d) a connecting means for connecting predetermined circuits and elements of the first substrate, second substrate, and third substrate.