JPH05326739A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor device having high characteristics at low cost wherein the chip area is to be cut down by removing respective patterns of inductor and capacitor from an integrated circuit substrate having high-frequency integrated circuit. CONSTITUTION:Respective patterns of an inductor 2 and a capacitor 3 are provided on a laminated ceramic substrate 9 as a mother body of a package containing a high-frequency integrated circuit and then these patterns are removed from an integrated circuit substrate 8 whereon the high-frequency integrated circuit is formed so as to cut down the chip area.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a microwave band semiconductor device package structure.

[0002]

2. Description of the Related Art A monolithic microwave integrated circuit amplifier (hereinafter referred to as MMIC amplifier) will be described as an example of a microwave semiconductor device.

FIG. 5 is a plan view showing an example of a chip pattern of a conventional MMIC amplifier. In this figure, 1 is a high frequency transistor, 2 is an inductor, 3 is a capacitor, 4 is an input signal terminal, 5 is an output signal terminal, 6 is a DC bias application terminal of the high frequency transistor 1, and 7 is impedance matching of the high frequency transistor 1. A circuit, 8 is an integrated circuit board.

Next, the operation will be described. The signal applied to the input signal terminal 4 is amplified by the high frequency transistor 1 and taken out from the output signal terminal 5. here,
A DC bias for operating the high frequency transistor 1 is supplied from a DC bias applying terminal 6.

The capacitor 3 and the inductor 2 act as a DC bias applying circuit for the high frequency transistor 1,
Passes only DC components and blocks high-frequency signal components. An impedance matching circuit 7 is used to match the input and output impedances of the high frequency transistor 1 with a predetermined characteristic impedance.

[0006]

Since the conventional MMIC amplifier is constructed as described above, a large capacity capacitor 3 and inductor 2 are required depending on the characteristics required of the amplifier and the operating frequency.

As a result, the areas of the capacitor 3 and the inductor 2 are increased, and most of the MMIC amplifier pattern becomes the respective patterns of the capacitor 3 and the inductor 2, which causes a problem of cost increase due to an increase in the area of the MMIC chip and a large area. However, there is a problem that it is difficult to design the MMIC circuit by the inductor 2, the capacitor 3, and the respective pattern arrangements.

The present invention has been made to solve the above problems, and an object of the present invention is to obtain a semiconductor device in which the area occupied by a capacitor and an inductor is reduced.

[0009]

A semiconductor device according to the present invention has a capacitor and an inductor pattern formed on a laminated ceramic substrate different from an integrated circuit substrate on which a high frequency integrated circuit including a semiconductor element is formed. Is.

Further, a concave portion for accommodating the coil inductor is provided in a part of the laminated ceramic substrate.

[0011]

In the present invention, since the respective patterns of the capacitor and the inductor are provided on the laminated ceramic substrate which is a package separately from the integrated circuit substrate, the respective patterns of the capacitor and the inductor occupying the integrated circuit substrate are The area is reduced.

Further, since the concave portion is formed in a part of the laminated ceramic substrate and the coil inductor is housed in the concave portion, the area occupied by the inductor is reduced.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view showing a chip pattern of an MMIC amplifier, and FIG. 2 is a plan view showing a case where the MMIC chip pattern shown in FIG. 1 is housed in a package according to the present invention and there is no upper lid. 3 is a sectional view taken along the line AA of FIG.

In these figures, reference numerals 1 to 8 are equivalent to those shown in FIG. 5, and therefore description thereof will be omitted. However, the inductor 2 and the capacitor 3 are different from the integrated circuit substrate 8 on which the high frequency transistor 1 is formed. It is formed on a multilayer ceramic substrate of another package.

That is, 9 is a monolithic ceramic substrate that is the base of the package, and 21 and 31 are ceramic layers 9.
0, which is an electrode metal layer formed between
The electrode metal layer 32 is provided with 0 interposed therebetween, and the capacitor 3
And the electrode metal layer 21 constitutes the inductor 2. These capacitors 3 and inductors 2 are connected between the pattern on the integrated circuit board 8 and the electrode leads of the package.

With the above-described structure, the respective patterns of the capacitor 3 and the inductor 2 which are conventionally formed on a high-frequency circuit and occupy a large area can be removed from the integrated circuit board 8, and the chip size can be reduced. , The layout of the circuit pattern eliminates or reduces the restrictions on the respective patterns of the capacitor 3 and the inductor 2.
The degree of freedom in integrated circuit pattern design is improved.

In the above embodiment, each pattern of the capacitor 3 and the inductor 2 is provided on the laminated ceramic substrate 9, but as shown in FIG. 4, a coil inductor having a larger shape is formed on a part of the laminated ceramic substrate 9 of the package. 20
The inductor may be removed from the integrated circuit board 8 by providing a recess 9a for housing the.

Further, although the MMIC amplifier has been described in the above embodiment, it is not limited to this, and it goes without saying that the same effect can be obtained even when applied to other high frequency integrated circuits.

[0019]

As described above, according to the present invention, since both patterns of capacitors and inductors are formed on the laminated ceramic substrate which is the base of the package, it is possible to reduce the integrated circuit pattern because multilayer wiring can be used. The circuit can be miniaturized. Further, there is an effect that the design of the integrated circuit pattern becomes easy and an inexpensive high frequency integrated circuit can be obtained.

Further, since a concave portion is provided in a part of the package and the coil inductor having a larger shape is accommodated in the concave portion, the inductor pattern can be removed from the integrated circuit pattern, and similarly, the pattern can be reduced in size to reduce the cost. A high frequency integrated circuit can be realized.

[Brief description of drawings]

FIG. 1 is an MM according to an embodiment of a high frequency integrated circuit of the present invention.
It is a top view which shows the chip pattern of an IC amplifier.

FIG. 2 is a plan view showing a state in which the MMIC chip pattern of FIG. 1 is housed in a package of the present invention and an upper lid is removed.

3 is a cross-sectional view taken along the line AA of FIG.

FIG. 4 is a plan view showing another embodiment of the present invention.

FIG. 5 is a plan view showing a chip pattern of a conventional MMIC amplifier.

[Explanation of symbols]

 1 High Frequency Transistor 2 Inductor 3 Capacitor 4 Input Signal Terminal 5 Output Signal Terminal 6 DC Bias Applying Terminal 7 Impedance Matching Circuit 8 Integrated Circuit Board 9 Multilayer Ceramic Substrate 9a Recess 20 Coil Inductor 21 Inductor Electrode Metal Layer 31 Capacitor Electrode Metal Layer 32 Capacitor electrode metal layer 90 Ceramic layer

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification number Office reference number FI technical display location H01P 1/00 Z 3/08 H03F 3/60 8522-5J

Claims (2)

[Claims] 1. A semiconductor device comprising a semiconductor element and a package accommodating the semiconductor element, wherein a capacitor pattern and an inductor pattern are provided on a laminated ceramic substrate different from an integrated circuit substrate on which a high frequency integrated circuit including the semiconductor element is formed. A semiconductor device comprising: 2. A semiconductor device comprising a semiconductor element and a package accommodating the semiconductor element, wherein a coil inductor is provided on a part of a laminated ceramic substrate different from an integrated circuit substrate on which a high frequency integrated circuit including the semiconductor element is formed. A semiconductor device having a recessed portion for accommodating therein.