JPS6322069B2 - - Google Patents
Info
- Publication number
- JPS6322069B2 JPS6322069B2 JP54147322A JP14732279A JPS6322069B2 JP S6322069 B2 JPS6322069 B2 JP S6322069B2 JP 54147322 A JP54147322 A JP 54147322A JP 14732279 A JP14732279 A JP 14732279A JP S6322069 B2 JPS6322069 B2 JP S6322069B2
- Authority
- JP
- Japan
- Prior art keywords
- type layer
- film
- layer
- substrate
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 27
- 239000003990 capacitor Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- 230000007423 decrease Effects 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- -1 boron ions Chemical class 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14732279A JPS5670657A (en) | 1979-11-14 | 1979-11-14 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14732279A JPS5670657A (en) | 1979-11-14 | 1979-11-14 | Semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5670657A JPS5670657A (en) | 1981-06-12 |
| JPS6322069B2 true JPS6322069B2 (fr) | 1988-05-10 |
Family
ID=15427554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14732279A Granted JPS5670657A (en) | 1979-11-14 | 1979-11-14 | Semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5670657A (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56107571A (en) * | 1980-01-30 | 1981-08-26 | Fujitsu Ltd | Semiconductor memory storage device |
| JPS602780B2 (ja) * | 1981-12-29 | 1985-01-23 | 富士通株式会社 | 半導体装置 |
| JPS5965825A (ja) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | 液晶表示素子 |
| US4903094A (en) * | 1986-08-26 | 1990-02-20 | General Electric Company | Memory cell structure having radiation hardness |
| US5734188A (en) * | 1987-09-19 | 1998-03-31 | Hitachi, Ltd. | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same |
| US5264712A (en) * | 1989-03-20 | 1993-11-23 | Hitachi, Ltd. | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same |
| US5917211A (en) * | 1988-09-19 | 1999-06-29 | Hitachi, Ltd. | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5637663A (en) * | 1979-09-05 | 1981-04-11 | Mitsubishi Electric Corp | Capacitor |
-
1979
- 1979-11-14 JP JP14732279A patent/JPS5670657A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5637663A (en) * | 1979-09-05 | 1981-04-11 | Mitsubishi Electric Corp | Capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5670657A (en) | 1981-06-12 |
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