JPS632138B2 - - Google Patents
Info
- Publication number
- JPS632138B2 JPS632138B2 JP12471482A JP12471482A JPS632138B2 JP S632138 B2 JPS632138 B2 JP S632138B2 JP 12471482 A JP12471482 A JP 12471482A JP 12471482 A JP12471482 A JP 12471482A JP S632138 B2 JPS632138 B2 JP S632138B2
- Authority
- JP
- Japan
- Prior art keywords
- absorber layer
- ray
- layer
- exposure mask
- ray exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000006096 absorbing agent Substances 0.000 claims description 85
- 238000004519 manufacturing process Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 11
- 238000000992 sputter etching Methods 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 description 24
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 239000002184 metal Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 20
- 238000007796 conventional method Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 229910002794 Si K Inorganic materials 0.000 description 3
- 229910002703 Al K Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57124714A JPS5914638A (ja) | 1982-07-17 | 1982-07-17 | X線露光用マスクの製法 |
| US06/513,954 US4515876A (en) | 1982-07-17 | 1983-07-15 | X-Ray lithography mask and method for fabricating the same |
| DE19833325832 DE3325832A1 (de) | 1982-07-17 | 1983-07-18 | Roentgenstrahlenlithographie-maske und verfahren zu seiner herstellung |
| FR8311817A FR2542882B1 (fr) | 1982-07-17 | 1983-07-18 | Masque de lithographie a rayons x et procede de fabrication de celui-ci |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57124714A JPS5914638A (ja) | 1982-07-17 | 1982-07-17 | X線露光用マスクの製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5914638A JPS5914638A (ja) | 1984-01-25 |
| JPS632138B2 true JPS632138B2 (enExample) | 1988-01-18 |
Family
ID=14892285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57124714A Granted JPS5914638A (ja) | 1982-07-17 | 1982-07-17 | X線露光用マスクの製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5914638A (enExample) |
-
1982
- 1982-07-17 JP JP57124714A patent/JPS5914638A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5914638A (ja) | 1984-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH03245527A (ja) | 微細加工方法 | |
| US4139444A (en) | Method of reticulating a pyroelectric vidicon target | |
| JPS632138B2 (enExample) | ||
| JP3237082B2 (ja) | レジストパターンの形成方法 | |
| JPS6237530B2 (enExample) | ||
| JPS63155618A (ja) | X線露光用マスクの製造方法 | |
| JPH03194829A (ja) | 微小真空三極管とその製造方法 | |
| JP3349001B2 (ja) | 金属膜の形成方法 | |
| JP2811755B2 (ja) | 微小真空三極管の製造方法 | |
| JP2638576B2 (ja) | X線露光マスクの製造方法 | |
| JPS61173250A (ja) | フオトマスク材料 | |
| JP2886573B2 (ja) | X線マスクおよびその製造方法 | |
| JPS60120526A (ja) | 微細パタン形成法 | |
| JP4207272B2 (ja) | 電子ビーム描画用アパーチャ | |
| JP2846988B2 (ja) | 電界放出型電子放出源素子 | |
| JPH0247848B2 (enExample) | ||
| JPH02133923A (ja) | 半導体装置の製造方法 | |
| JPH02159731A (ja) | 電界効果トランジスタの製造方法 | |
| JPH07174677A (ja) | 透過電子顕微鏡観察用試料の作製方法 | |
| JPH0416009B2 (enExample) | ||
| JPH01184920A (ja) | 電子ビーム転写用マスクおよびその製造方法 | |
| JPH07220999A (ja) | X線マスクおよびその製造方法と、該マスクを用いた露光方法 | |
| JP2001185481A (ja) | 転写マスク | |
| JPH05109779A (ja) | ゲート電極の形成方法 | |
| JPS6212663B2 (enExample) |