JPS5914638A - Ｘ線露光用マスクの製法 - Google Patents
Ｘ線露光用マスクの製法Info
- Publication number
- JPS5914638A JPS5914638A JP57124714A JP12471482A JPS5914638A JP S5914638 A JPS5914638 A JP S5914638A JP 57124714 A JP57124714 A JP 57124714A JP 12471482 A JP12471482 A JP 12471482A JP S5914638 A JPS5914638 A JP S5914638A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- absorber layer
- mask
- layer
- exposure mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000006096 absorbing agent Substances 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000992 sputter etching Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 8
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 21
- 238000005530 etching Methods 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002861 polymer material Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57124714A JPS5914638A (ja) | 1982-07-17 | 1982-07-17 | Ｘ線露光用マスクの製法 |
| US06/513,954 US4515876A (en) | 1982-07-17 | 1983-07-15 | X-Ray lithography mask and method for fabricating the same |
| DE19833325832 DE3325832A1 (de) | 1982-07-17 | 1983-07-18 | Roentgenstrahlenlithographie-maske und verfahren zu seiner herstellung |
| FR8311817A FR2542882B1 (fr) | 1982-07-17 | 1983-07-18 | Masque de lithographie a rayons x et procede de fabrication de celui-ci |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57124714A JPS5914638A (ja) | 1982-07-17 | 1982-07-17 | Ｘ線露光用マスクの製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5914638A true JPS5914638A (ja) | 1984-01-25 |
| JPS632138B2 JPS632138B2 (enExample) | 1988-01-18 |
Family
ID=14892285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57124714A Granted JPS5914638A (ja) | 1982-07-17 | 1982-07-17 | Ｘ線露光用マスクの製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5914638A (enExample) |
-
1982
- 1982-07-17 JP JP57124714A patent/JPS5914638A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS632138B2 (enExample) | 1988-01-18 |
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