JPS6320390B2 - - Google Patents

Info

Publication number
JPS6320390B2
JPS6320390B2 JP3757381A JP3757381A JPS6320390B2 JP S6320390 B2 JPS6320390 B2 JP S6320390B2 JP 3757381 A JP3757381 A JP 3757381A JP 3757381 A JP3757381 A JP 3757381A JP S6320390 B2 JPS6320390 B2 JP S6320390B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
type
layer
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3757381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57152184A (en
Inventor
Hiroyoshi Rangu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP3757381A priority Critical patent/JPS57152184A/ja
Publication of JPS57152184A publication Critical patent/JPS57152184A/ja
Publication of JPS6320390B2 publication Critical patent/JPS6320390B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP3757381A 1981-03-16 1981-03-16 Semiconductor laser device Granted JPS57152184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3757381A JPS57152184A (en) 1981-03-16 1981-03-16 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3757381A JPS57152184A (en) 1981-03-16 1981-03-16 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS57152184A JPS57152184A (en) 1982-09-20
JPS6320390B2 true JPS6320390B2 (enrdf_load_html_response) 1988-04-27

Family

ID=12501268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3757381A Granted JPS57152184A (en) 1981-03-16 1981-03-16 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57152184A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435148A1 (de) * 1984-09-25 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Laserdiode mit vergrabener aktiver schicht und mit seitlicher strombegrezung durch selbstjustierten pn-uebergang sowie verfahren zur herstellung einer solchen laserdiode

Also Published As

Publication number Publication date
JPS57152184A (en) 1982-09-20

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