JPS63190800A - SiCウイスカ−の製造方法 - Google Patents
SiCウイスカ−の製造方法Info
- Publication number
- JPS63190800A JPS63190800A JP62018164A JP1816487A JPS63190800A JP S63190800 A JPS63190800 A JP S63190800A JP 62018164 A JP62018164 A JP 62018164A JP 1816487 A JP1816487 A JP 1816487A JP S63190800 A JPS63190800 A JP S63190800A
- Authority
- JP
- Japan
- Prior art keywords
- sic whiskers
- fine powder
- sio
- carbon black
- water cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62018164A JPS63190800A (ja) | 1987-01-30 | 1987-01-30 | SiCウイスカ−の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62018164A JPS63190800A (ja) | 1987-01-30 | 1987-01-30 | SiCウイスカ−の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63190800A true JPS63190800A (ja) | 1988-08-08 |
JPH03358B2 JPH03358B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-01-07 |
Family
ID=11963967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62018164A Granted JPS63190800A (ja) | 1987-01-30 | 1987-01-30 | SiCウイスカ−の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63190800A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1987
- 1987-01-30 JP JP62018164A patent/JPS63190800A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH03358B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-01-07 |