JPS63177052U - - Google Patents

Info

Publication number

JPS63177052U

JPS63177052U JP6630187U JP6630187U JPS63177052U JP S63177052 U JPS63177052 U JP S63177052U JP 6630187 U JP6630187 U JP 6630187U JP 6630187 U JP6630187 U JP 6630187U JP S63177052 U JPS63177052 U JP S63177052U

Authority

JP

Japan

Prior art keywords

trench

conductivity type

semiconductor substrate

impurity diffusion

film

Prior art date

1987-05-01

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
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• 239000004065 semiconductor Substances 0.000 claims description 5
• 238000009792 diffusion process Methods 0.000 claims description 3
• 239000012535 impurity Substances 0.000 claims description 3
• 239000000758 substrate Substances 0.000 claims description 3
• 239000012212 insulator Substances 0.000 claims 1
• 239000010410 layer Substances 0.000 description 2
• 229910052581 Si3N4 Inorganic materials 0.000 description 1
• 239000011229 interlayer Substances 0.000 description 1
• 238000002955 isolation Methods 0.000 description 1
• 238000004519 manufacturing process Methods 0.000 description 1
• 239000002184 metal Substances 0.000 description 1
• 238000002161 passivation Methods 0.000 description 1
• 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1

Cited By (2)