JPS6317590B2 - - Google Patents

Info

Publication number
JPS6317590B2
JPS6317590B2 JP53107796A JP10779678A JPS6317590B2 JP S6317590 B2 JPS6317590 B2 JP S6317590B2 JP 53107796 A JP53107796 A JP 53107796A JP 10779678 A JP10779678 A JP 10779678A JP S6317590 B2 JPS6317590 B2 JP S6317590B2
Authority
JP
Japan
Prior art keywords
wafer
wrapping
warpage
wrapped
sided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53107796A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5537229A (en
Inventor
Tsuneo Hamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP10779678A priority Critical patent/JPS5537229A/ja
Publication of JPS5537229A publication Critical patent/JPS5537229A/ja
Publication of JPS6317590B2 publication Critical patent/JPS6317590B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP10779678A 1978-09-01 1978-09-01 Lapping method of wafer Granted JPS5537229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10779678A JPS5537229A (en) 1978-09-01 1978-09-01 Lapping method of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10779678A JPS5537229A (en) 1978-09-01 1978-09-01 Lapping method of wafer

Publications (2)

Publication Number Publication Date
JPS5537229A JPS5537229A (en) 1980-03-15
JPS6317590B2 true JPS6317590B2 (enExample) 1988-04-14

Family

ID=14468243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10779678A Granted JPS5537229A (en) 1978-09-01 1978-09-01 Lapping method of wafer

Country Status (1)

Country Link
JP (1) JPS5537229A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10210023A1 (de) * 2002-03-07 2003-05-28 Wacker Siltronic Halbleitermat Siliciumscheibe und Verfahren zu ihrer Herstellung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5344367Y2 (enExample) * 1974-04-27 1978-10-24
JPS5123896A (en) * 1974-08-21 1976-02-26 Hitachi Electronics Usuitazaino shiagekakohoho

Also Published As

Publication number Publication date
JPS5537229A (en) 1980-03-15

Similar Documents

Publication Publication Date Title
US5964646A (en) Grinding process and apparatus for planarizing sawed wafers
JPH0636414B2 (ja) 半導体素子形成用基板の製造方法
US6352927B2 (en) Semiconductor wafer and method for fabrication thereof
KR20010030567A (ko) 반도체 웨이퍼의 가공방법
US3951728A (en) Method of treating semiconductor wafers
JPS6317590B2 (enExample)
JPH08274285A (ja) Soi基板及びその製造方法
JPH05226305A (ja) 張合せウェハの製造方法
TW200403739A (en) Method of machining silicon wafer
JPH02208931A (ja) 化合物半導体基板の研磨方法
JPS62132324A (ja) ウエハ−の面取り研削ダメ−ジ層の除去方法および除去用治具
JPS61158145A (ja) 半導体基板の加工方法
JP3821944B2 (ja) ウェーハの枚葉式研磨方法とその装置
JPS6240141B2 (enExample)
US11534889B2 (en) Polishing pad for wafer polishing apparatus and manufacturing method therefor
JPH07201789A (ja) 化合物半導体ウェハの両面ラッピング方法
JPH07302774A (ja) 半導体基板の研磨方法、その装置、及び半導体基板の研磨用貼付プレート
JPH05114593A (ja) 半導体ウエハーの研削方法
JPS5972139A (ja) 薄板材の加工方法
JPS59188921A (ja) 誘電体分離基板の製造方法
JP2950497B2 (ja) 半導体ウェ−ハおよびその製造方法
JPS62181869A (ja) 半導体ウエハの研磨方法
JPH02294032A (ja) ウエハー研磨方法及び研磨装置
JPH02178927A (ja) 板面体の研磨方法
JPS58168243A (ja) 半導体ウエ−ハの処理方法