JPS6317518A - サセプタ加熱方法 - Google Patents
サセプタ加熱方法Info
- Publication number
- JPS6317518A JPS6317518A JP61160933A JP16093386A JPS6317518A JP S6317518 A JPS6317518 A JP S6317518A JP 61160933 A JP61160933 A JP 61160933A JP 16093386 A JP16093386 A JP 16093386A JP S6317518 A JPS6317518 A JP S6317518A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- heating
- temperature
- output
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61160933A JPS6317518A (ja) | 1986-07-10 | 1986-07-10 | サセプタ加熱方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61160933A JPS6317518A (ja) | 1986-07-10 | 1986-07-10 | サセプタ加熱方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6317518A true JPS6317518A (ja) | 1988-01-25 |
| JPH0554693B2 JPH0554693B2 (enExample) | 1993-08-13 |
Family
ID=15725380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61160933A Granted JPS6317518A (ja) | 1986-07-10 | 1986-07-10 | サセプタ加熱方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6317518A (enExample) |
-
1986
- 1986-07-10 JP JP61160933A patent/JPS6317518A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0554693B2 (enExample) | 1993-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3090339B2 (ja) | 気相成長装置および方法 | |
| US7700376B2 (en) | Edge temperature compensation in thermal processing particularly useful for SOI wafers | |
| JPH04179223A (ja) | 熱処理装置 | |
| TW200534334A (en) | Processing apparatus and method for removing particles therefrom | |
| TW515117B (en) | Method of manufacturing semiconductor wafer | |
| JP2003257873A (ja) | 半導体製造方法および半導体製造装置 | |
| JP2008249641A (ja) | 温度推定方法および温度推定装置 | |
| JPH0554693B2 (enExample) | ||
| JP3267371B2 (ja) | ウエハの加熱方法及び装置 | |
| JPH04239120A (ja) | 気相成長方法 | |
| JP2001085339A (ja) | 温度制御方法 | |
| JPS5944819A (ja) | 気相成長装置 | |
| JP2000053493A (ja) | 単結晶の製造方法および単結晶製造装置 | |
| JPH08181150A (ja) | 基板加熱処理方法 | |
| JPH03252127A (ja) | 気相成長装置の温度制御方法 | |
| JPH04206943A (ja) | サセプターの温度均一化方法 | |
| JPH04134816A (ja) | 半導体製造装置 | |
| TW202414142A (zh) | 用於所需溫度曲線的自動微調器 | |
| JPS622616A (ja) | 半導体ウエハ−の熱処理方法 | |
| JPS63203771A (ja) | 半導体基板加熱装置 | |
| JPS6287500A (ja) | 拡散炉 | |
| JPS587817A (ja) | 半導体気相成長方法 | |
| JPH04167523A (ja) | ドライエッチング装置 | |
| JPS6045015A (ja) | 高周波加熱気相成長装置 | |
| JPH01262619A (ja) | 気相成長装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |