JPS63174349A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS63174349A JPS63174349A JP672287A JP672287A JPS63174349A JP S63174349 A JPS63174349 A JP S63174349A JP 672287 A JP672287 A JP 672287A JP 672287 A JP672287 A JP 672287A JP S63174349 A JPS63174349 A JP S63174349A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- silicon film
- ions
- semiconductor substrate
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 18
- -1 oxygen ions Chemical class 0.000 claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 7
- 239000011574 phosphorus Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000005468 ion implantation Methods 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP672287A JPS63174349A (ja) | 1987-01-13 | 1987-01-13 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP672287A JPS63174349A (ja) | 1987-01-13 | 1987-01-13 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63174349A true JPS63174349A (ja) | 1988-07-18 |
| JPH0565060B2 JPH0565060B2 (enrdf_load_stackoverflow) | 1993-09-16 |
Family
ID=11646150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP672287A Granted JPS63174349A (ja) | 1987-01-13 | 1987-01-13 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63174349A (enrdf_load_stackoverflow) |
-
1987
- 1987-01-13 JP JP672287A patent/JPS63174349A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0565060B2 (enrdf_load_stackoverflow) | 1993-09-16 |
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