JPS6317334B2 - - Google Patents

Info

Publication number
JPS6317334B2
JPS6317334B2 JP57162730A JP16273082A JPS6317334B2 JP S6317334 B2 JPS6317334 B2 JP S6317334B2 JP 57162730 A JP57162730 A JP 57162730A JP 16273082 A JP16273082 A JP 16273082A JP S6317334 B2 JPS6317334 B2 JP S6317334B2
Authority
JP
Japan
Prior art keywords
silicon
film
silicon dioxide
dielectric film
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57162730A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5951544A (ja
Inventor
Akinobu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIDO KEISOKU GIJUTSU KENKYUKUMIAI
Original Assignee
JIDO KEISOKU GIJUTSU KENKYUKUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIDO KEISOKU GIJUTSU KENKYUKUMIAI filed Critical JIDO KEISOKU GIJUTSU KENKYUKUMIAI
Priority to JP16273082A priority Critical patent/JPS5951544A/ja
Publication of JPS5951544A publication Critical patent/JPS5951544A/ja
Publication of JPS6317334B2 publication Critical patent/JPS6317334B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP16273082A 1982-09-17 1982-09-17 誘電体分離半導体集積回路装置の製造方法 Granted JPS5951544A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16273082A JPS5951544A (ja) 1982-09-17 1982-09-17 誘電体分離半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16273082A JPS5951544A (ja) 1982-09-17 1982-09-17 誘電体分離半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5951544A JPS5951544A (ja) 1984-03-26
JPS6317334B2 true JPS6317334B2 (enrdf_load_stackoverflow) 1988-04-13

Family

ID=15760174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16273082A Granted JPS5951544A (ja) 1982-09-17 1982-09-17 誘電体分離半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5951544A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177644A (ja) * 1984-02-23 1985-09-11 Matsushita Electric Works Ltd 高耐圧半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568842A (en) * 1979-07-04 1981-01-29 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS5951544A (ja) 1984-03-26

Similar Documents

Publication Publication Date Title
JPH0423422B2 (enrdf_load_stackoverflow)
JPH0834242B2 (ja) 半導体装置およびその製造方法
KR960005552B1 (ko) 반도체 소자의 분리막 형성 방법
US5061653A (en) Trench isolation process
JPH0758676B2 (ja) 半導体装置における基板の製造方法
JP2589209B2 (ja) 半導体装置の素子間分離領域の形成方法
US6103581A (en) Method for producing shallow trench isolation structure
JPS6317334B2 (enrdf_load_stackoverflow)
US5208167A (en) Method for producing SOI substrate
JPS6257232A (ja) アイソレ−シヨンデバイス及びその製法
JPS6351537B2 (enrdf_load_stackoverflow)
JP2812013B2 (ja) 半導体装置の製造方法
JPS5828731B2 (ja) ゼツエンキバンジヨウヘノ シリコンソウサクセイホウホウ
JPS6244415B2 (enrdf_load_stackoverflow)
JPH0754826B2 (ja) 半導体装置の製造方法
JPH02205339A (ja) 半導体装置の製造方法
KR100204418B1 (ko) 반도체 소자 분리방법
JPS6359538B2 (enrdf_load_stackoverflow)
JPS6244411B2 (enrdf_load_stackoverflow)
JPH0258778B2 (enrdf_load_stackoverflow)
JPS5939044A (ja) 絶縁分離集積回路用基板の製造方法
KR980012255A (ko) 반도체장치의 소자분리 방법
JPS58130555A (ja) 半導体装置
JPH0737974A (ja) 半導体装置の製造方法
JPS6226182B2 (enrdf_load_stackoverflow)