JPS63172420A - 光cvd装置における光源の設置構造 - Google Patents
光cvd装置における光源の設置構造Info
- Publication number
- JPS63172420A JPS63172420A JP311787A JP311787A JPS63172420A JP S63172420 A JPS63172420 A JP S63172420A JP 311787 A JP311787 A JP 311787A JP 311787 A JP311787 A JP 311787A JP S63172420 A JPS63172420 A JP S63172420A
- Authority
- JP
- Japan
- Prior art keywords
- quartz window
- reaction chamber
- lamp house
- gas
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 39
- 239000010453 quartz Substances 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000010926 purge Methods 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims description 32
- 238000009423 ventilation Methods 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000007664 blowing Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000001629 suppression Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 18
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 7
- 229910052753 mercury Inorganic materials 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP311787A JPS63172420A (ja) | 1987-01-12 | 1987-01-12 | 光cvd装置における光源の設置構造 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP311787A JPS63172420A (ja) | 1987-01-12 | 1987-01-12 | 光cvd装置における光源の設置構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63172420A true JPS63172420A (ja) | 1988-07-16 |
JPH0530298B2 JPH0530298B2 (zh) | 1993-05-07 |
Family
ID=11548410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP311787A Granted JPS63172420A (ja) | 1987-01-12 | 1987-01-12 | 光cvd装置における光源の設置構造 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63172420A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0237744A (ja) * | 1988-07-27 | 1990-02-07 | Tokyo Electron Ltd | 搬送装置 |
-
1987
- 1987-01-12 JP JP311787A patent/JPS63172420A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0237744A (ja) * | 1988-07-27 | 1990-02-07 | Tokyo Electron Ltd | 搬送装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0530298B2 (zh) | 1993-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7456109B2 (en) | Method for cleaning substrate processing chamber | |
JP4232330B2 (ja) | 励起ガス形成装置、処理装置及び処理方法 | |
KR100491128B1 (ko) | 기판 처리장치 및 반도체 장치의 제조방법 | |
US4811684A (en) | Photo CVD apparatus, with deposition prevention in light source chamber | |
JPH0752718B2 (ja) | 薄膜形成方法 | |
US20020185067A1 (en) | Apparatus and method for in-situ cleaning of a throttle valve in a CVD system | |
JP2752235B2 (ja) | 半導体基板の製造方法 | |
KR950007966B1 (ko) | 진공막 형성장치 | |
JPS63172420A (ja) | 光cvd装置における光源の設置構造 | |
JPH09246257A (ja) | 半導体製造装置およびガス排出方法 | |
JPH0394059A (ja) | 金属酸化薄膜形成方法およびその装置 | |
JPS59126774A (ja) | 気相金属堆積装置 | |
JP2983084B2 (ja) | 薄膜形成方法および、この方法を用いた真空成膜装置 | |
JP3174787B2 (ja) | 光cvd装置 | |
JPH04254489A (ja) | 減圧cvd装置 | |
JP2001135576A (ja) | 薄膜形成装置及び薄膜形成方法 | |
JPH0689455B2 (ja) | 薄膜形成方法 | |
JPH03104867A (ja) | Cvd装置 | |
JPH03268320A (ja) | 光cvd装置 | |
JPH06140335A (ja) | 成膜装置 | |
JPH03291381A (ja) | 縦型cvd装置 | |
JPH08310896A (ja) | 気相成長装置 | |
JPH0610673Y2 (ja) | 光cvd装置 | |
JPH0623566Y2 (ja) | 半導体製造装置 | |
JP2005197541A (ja) | 基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |