JPH0530298B2 - - Google Patents
Info
- Publication number
- JPH0530298B2 JPH0530298B2 JP311787A JP311787A JPH0530298B2 JP H0530298 B2 JPH0530298 B2 JP H0530298B2 JP 311787 A JP311787 A JP 311787A JP 311787 A JP311787 A JP 311787A JP H0530298 B2 JPH0530298 B2 JP H0530298B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- lamp house
- quartz window
- purge gas
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 34
- 239000010453 quartz Substances 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 238000010926 purge Methods 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000009423 ventilation Methods 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000007664 blowing Methods 0.000 claims description 4
- 238000009434 installation Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 18
- 239000012495 reaction gas Substances 0.000 description 9
- 238000005755 formation reaction Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP311787A JPS63172420A (ja) | 1987-01-12 | 1987-01-12 | 光ｃｖｄ装置における光源の設置構造 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP311787A JPS63172420A (ja) | 1987-01-12 | 1987-01-12 | 光ｃｖｄ装置における光源の設置構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63172420A JPS63172420A (ja) | 1988-07-16 |
| JPH0530298B2 true JPH0530298B2 (zh) | 1993-05-07 |
Family
ID=11548410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP311787A Granted JPS63172420A (ja) | 1987-01-12 | 1987-01-12 | 光ｃｖｄ装置における光源の設置構造 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63172420A (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0237744A (ja) * | 1988-07-27 | 1990-02-07 | Tokyo Electron Ltd | 搬送装置 |
-
1987
- 1987-01-12 JP JP311787A patent/JPS63172420A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63172420A (ja) | 1988-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |