JPS63169746A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63169746A JPS63169746A JP225487A JP225487A JPS63169746A JP S63169746 A JPS63169746 A JP S63169746A JP 225487 A JP225487 A JP 225487A JP 225487 A JP225487 A JP 225487A JP S63169746 A JPS63169746 A JP S63169746A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- conductors
- lead frame
- leads
- precoat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000003566 sealing material Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 abstract description 13
- 239000011347 resin Substances 0.000 abstract description 6
- 229920005989 resin Polymers 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000007789 sealing Methods 0.000 abstract 2
- 238000005219 brazing Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特に半導体素子回りの構造
における半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device in a structure around a semiconductor element.
従来、この種の半導体装置は、第２図（ａ＞及び（ｂ）
にそれぞれ平面図及びＢ−Ｂ′線断面図を示すように、
リードフレーム１のアイランド１１上に半導体素子２を
搭載してろう材３で固定し、リードフレーム１のリード
１２と半導体素子２上の電極とを細い導線４で接続し、
半導体素子２と導線４の一部とをプリコート材７′で覆
い、プリコート材７′と導線４を含むリード１２を樹脂
５で封止していた。Conventionally, this type of semiconductor device is as shown in FIGS.
As shown in the plan view and sectional view taken along the line B-B', respectively,
The semiconductor element 2 is mounted on the island 11 of the lead frame 1 and fixed with a brazing material 3, and the leads 12 of the lead frame 1 and the electrodes on the semiconductor element 2 are connected with a thin conducting wire 4.
The semiconductor element 2 and a part of the conductor wire 4 were covered with a precoat material 7', and the lead 12 including the precoat material 7' and the conductor wire 4 was sealed with a resin 5.
上述した従来の半導体装置は、導線がプリコート材と樹
脂とを通るようになっているので、プリコート材と樹脂
との境界面で熱膨張の差により導線が切断されるという
欠点がある。In the conventional semiconductor device described above, since the conductive wire passes through the precoat material and the resin, there is a drawback that the conductive wire is cut due to the difference in thermal expansion at the interface between the precoat material and the resin.
本発明の目的は、熱膨張の差により導線の断線が発生し
ない半導体装置を提供することにある。An object of the present invention is to provide a semiconductor device in which disconnection of conductive wires does not occur due to differences in thermal expansion.
本発明の半導体装置は、リードフレームと、該リドフレ
ームのアイランド上に固定された半導体素子と、該半導
体素子上の電極と前記リードフレ−ムのリードとを接続
する複数の導線と、前記リードフレームの裏面側に前記
半導体素子及び導線の領域を含んで貼付されるシール材
と、前記半導体素子及び導線上を覆って形成されるプリ
コート材とを有している。The semiconductor device of the present invention includes a lead frame, a semiconductor element fixed on an island of the lead frame, a plurality of conductive wires connecting electrodes on the semiconductor element and leads of the lead frame, and a semiconductor element fixed on an island of the lead frame. includes a sealing material that is attached to the back side of the semiconductor element and the conductive wire including the area thereof, and a precoat material that is formed to cover the semiconductor element and the conductive wire.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図（ａ）及び（ｂ）はそれぞれ本発明の一実施例の
平面図及びＡ−Ａ”線断面図である。FIGS. 1(a) and 1(b) are a plan view and a sectional view taken along the line A-A'' of an embodiment of the present invention, respectively.
第１図（ａ）及び（ｂ）に示すように、集積回路等の半
導体素子２の下のリードフレーム１のアイランド１１と
リード１２の一部との裏面領域にシール材（カプトン等
）６を貼り、半導体素子２の電極とリードフレーム１の
リード１２とを複数の細い導線４で接続し、半導体素子
２と導線４との上部にそれらを覆ってプリコート材７を
形成する。この後、全体を樹脂５で封止して完成する。As shown in FIGS. 1(a) and 1(b), a sealing material (such as Kapton) 6 is applied to the back surface area of the island 11 and part of the leads 12 of the lead frame 1 under the semiconductor element 2 such as an integrated circuit. The electrodes of the semiconductor element 2 and the leads 12 of the lead frame 1 are connected by a plurality of thin conductive wires 4, and a precoat material 7 is formed on the semiconductor element 2 and the conductive wires 4 to cover them. After this, the entire structure is sealed with resin 5 and completed.
このように構成することにより、導線４はプリコート材
７のみに接するので、熱膨張及び収縮が繰返されても断
線することがない。With this configuration, the conductive wire 4 comes into contact only with the precoat material 7, so that it will not break even if thermal expansion and contraction are repeated.
（発明の効果〕
以上説明したように本発明の半導体装置は、導線がプリ
コート材のみと接するようにすることにより、熱膨張及
び収縮の繰返しに対して導線の切断が発生することを防
止できるので、信頼性を向上できるという効果がある。(Effects of the Invention) As explained above, the semiconductor device of the present invention can prevent the conductor from breaking due to repeated thermal expansion and contraction by allowing the conductor to contact only the precoat material. , which has the effect of improving reliability.
第１図（ａ）及び（ｂ）はそれぞれ本発明の一実施例の
平面図及びＡ−Ａ’断面図、第２図（ａ＞及び（ｂ）は
それぞれ従来の半導体装置の一例の平面図及びＢ−Ｂ’
断面図である。
１・・・リードフレーム、２・・・半導体素子、３・・
・ろう材、４・・・導線、５・・・樹脂、６・・・シー
ル材、７゜７′・・・プリコート材、１１・・・アイラ
ンド、１２・・・リード。
代理人 弁理士 内 原 晋（′１
／／ ３５うネオ
夢ｌ ■
菓２ 面FIGS. 1(a) and (b) are a plan view and an AA' cross-sectional view of an embodiment of the present invention, respectively, and FIGS. 2(a> and (b) are plan views of an example of a conventional semiconductor device, respectively. and B-B'
FIG. 1...Lead frame, 2...Semiconductor element, 3...
- Brazing metal, 4... Conductor wire, 5... Resin, 6... Sealing material, 7゜7'... Precoat material, 11... Island, 12... Lead. Agent: Susumu Uchihara, patent attorney
Claims (1)
固定された半導体素子と、該半導体素子上の電極と前記
リードフレームのリードとを接続する複数の導線と、前
記リードフレームの裏面側に前記半導体素子及び導線の
領域を含んで貼付されるシール材と、前記半導体素子及
び導線上を覆って形成されるプリコート材とを有する半
導体装置。A lead frame, a semiconductor element fixed on an island of the lead frame, a plurality of conductive wires connecting electrodes on the semiconductor element and leads of the lead frame, and a semiconductor element and a semiconductor element fixed on the back side of the lead frame. A semiconductor device comprising: a sealing material attached to include a region of a conductive wire; and a precoat material formed to cover the semiconductor element and the conductive wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP225487A JPS63169746A (en) | 1987-01-07 | 1987-01-07 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP225487A JPS63169746A (en) | 1987-01-07 | 1987-01-07 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63169746A true JPS63169746A (en) | 1988-07-13 |
Family
ID=11524225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP225487A Pending JPS63169746A (en) | 1987-01-07 | 1987-01-07 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63169746A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0878611A (en) * | 1994-08-31 | 1996-03-22 | Nec Corp | Semiconductor device |
| US5581119A (en) * | 1994-03-04 | 1996-12-03 | National Semiconductor Corporation | IC having heat spreader attached by glob-topping |
-
1987
- 1987-01-07 JP JP225487A patent/JPS63169746A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5581119A (en) * | 1994-03-04 | 1996-12-03 | National Semiconductor Corporation | IC having heat spreader attached by glob-topping |
| JPH0878611A (en) * | 1994-08-31 | 1996-03-22 | Nec Corp | Semiconductor device |
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