JPH02251161A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH02251161A
JPH02251161A JP1072587A JP7258789A JPH02251161A JP H02251161 A JPH02251161 A JP H02251161A JP 1072587 A JP1072587 A JP 1072587A JP 7258789 A JP7258789 A JP 7258789A JP H02251161 A JPH02251161 A JP H02251161A
Authority
JP
Japan
Prior art keywords
film
chip
conductive wiring
insulator
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1072587A
Other languages
Japanese (ja)
Inventor
Hiroshi Koyanagi
博 小柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP1072587A priority Critical patent/JPH02251161A/en
Publication of JPH02251161A publication Critical patent/JPH02251161A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

PURPOSE:To prevent the failure that conductive wiring patterns flow and those are in contact with each other at the time of resin sealing by electrically connecting leads with a semiconductor element (chip) through a film-form insulator on which a conductive wiring pattern is formed. CONSTITUTION:This device is composed of a film-form insulator (frame) 1, a conductive wiring pattern 2, leads 3, a semiconductor element 4, an electrode (on a chip) and a sealing resin 6. In this case, both sides of the conductive wiring pattern 2 formed on backside of the film-form insulator 1 connects the leads 3 with the electrode 5 of the semiconductor element 4 and makes them conductive. Thus, the contact of the conductive wiring patterns can be prevented. Meanwhile, it is also possible that instead of the film-form insulator 1 non- hollowed insulator is used so as to prevent moisture from the upper-outside of the sealing resin 6 from reaching the chip.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体素子(チップ)を樹脂などで包んだ形の
半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device in which a semiconductor element (chip) is wrapped in a resin or the like.

〔従来の技術〕[Conventional technology]

樹脂封止の従来の半導体装置は半導体素子(チップ)の
電極とリードとの電気的接続に導電金属細線を使用する
ことが一般的である。
Conventional resin-sealed semiconductor devices generally use thin conductive metal wires for electrical connection between electrodes and leads of a semiconductor element (chip).

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体装置は半導体素子(チップ)の電
極とリードとの電気的接続に幾本もの導電金属細線を使
用している為、樹脂封止時に導電金属細線が流れ導電金
属細線同志を接触させたり、導電金属細線自身を断線さ
せ半導体装置の特性をそこなわせるという欠点がある。
The conventional semiconductor device described above uses a number of thin conductive metal wires for electrical connection between the electrodes and leads of the semiconductor element (chip), so the thin conductive metal wires flow during resin sealing and contact the thin conductive metal wires. This has the disadvantage that the thin conductive metal wire itself may be disconnected and the characteristics of the semiconductor device may be impaired.

〔発明の従来技術に対する相違点〕[Differences between the invention and the prior art]

上述した従来の半導体装置に対し、本発明は半導体素子
(チップ)の電極とリードとの電気的接続を導電金属細
線の代わりにすでに導電配線パターンの形成されたフィ
ルム状の絶縁体によって行なうという相違点を有する。
The present invention differs from the conventional semiconductor device described above in that the electrical connections between the electrodes and leads of the semiconductor element (chip) are made using a film-like insulator on which a conductive wiring pattern has already been formed, instead of using conductive metal thin wires. Has a point.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体装置は半導体素子(チップ)の電極とリ
ードを電気的接続を行なう幾本もの導電配線パターンを
樹脂封止時に流れない様に固定させるという意味ですで
に導電配線パターンを形成しているフィルム状の絶縁体
を有している。
The semiconductor device of the present invention has already formed conductive wiring patterns in the sense that the conductive wiring patterns that electrically connect the electrodes and leads of the semiconductor element (chip) are fixed so that they will not flow during resin sealing. It has a film-like insulator.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の第1の実施例の透視図である。FIG. 1 is a perspective view of a first embodiment of the invention.

フィルム状絶縁体(枠型)の裏面に形成された導電配線
パターン2の両サイドがリード3と半導体素子(チップ
)4の電極5と接続することにより導通をとる。
Both sides of a conductive wiring pattern 2 formed on the back surface of a film-like insulator (frame type) are connected to leads 3 and electrodes 5 of a semiconductor element (chip) 4 to establish electrical continuity.

第2図は第1図のA−A線断面図で、第3図は第1図の
フィルム状絶縁体1の下面図である。
2 is a sectional view taken along the line A-A in FIG. 1, and FIG. 3 is a bottom view of the film-like insulator 1 in FIG. 1.

第4図は本発明の第2の実施例の透視図である。FIG. 4 is a perspective view of a second embodiment of the invention.

この実施例では第1図乃至第3図に示す第1の実施例と
違い、フィルム状絶縁体1′が中抜きではない為、封止
樹脂6の上方外部からの湿気がチップに達しないという
利点がある。
In this embodiment, unlike the first embodiment shown in FIGS. 1 to 3, the film-like insulator 1' is not hollow, so moisture from the outside above the sealing resin 6 does not reach the chip. There are advantages.

第5図は第4図のB−B断面図で、第6図は第4図のフ
ィルム状絶縁体1′の下面図である。
5 is a sectional view taken along the line BB in FIG. 4, and FIG. 6 is a bottom view of the film insulator 1' in FIG. 4.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は導電配線パターンを形成し
たフィルム状絶縁体で半導体素子(チップ)の電極とリ
ードを電気的接続することにより、樹脂封止時に導電配
線パターンが流れ導電配線パターン同志が接触する不具
合をなくすことができる効果がある。又リード−リード
間も固定することになるのでリード同志の接触する不具
合も少なくなる効果がある。
As explained above, the present invention electrically connects the electrodes and leads of a semiconductor element (chip) with a film-like insulator on which a conductive wiring pattern is formed. This has the effect of eliminating contact problems. Further, since the leads are also fixed, there is an effect that the problem of the leads coming into contact with each other is reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の第1の実施例の透視図、第2図は第1
図のA−A線断面図、第3図は第1図のフィルム状絶縁
体の下面図である。 1・・・・・・フィルム状絶縁体(枠型)、2・・・・
・・導電配線パターン、3・・・・・・リード、4・・
・・・半導体素子(チップ)、5・・・・・電極(チッ
プ上)、6・・・・封止樹脂 第4図は本発明の第2の実施例の透視図、第5図は第4
図のB−B断面図、第6図は第4図のフィルム状絶縁体
の下面図である。 1′・・・・・・フィルム状絶縁体(平型)、2・・・
・・・導電配線パターン、3・・・・・・リード、4・
・・・半導体素子(チップ)、5・・・・・電極(チッ
プ上)、6・・・・・封止樹脂。 代理人 弁理士  内 原   晋 トー   α)   ξつ
FIG. 1 is a perspective view of the first embodiment of the present invention, and FIG. 2 is a perspective view of the first embodiment of the present invention.
3 is a sectional view taken along the line A-A in the figure, and FIG. 3 is a bottom view of the film-like insulator shown in FIG. 1. 1...Film-like insulator (frame type), 2...
...Conductive wiring pattern, 3...Lead, 4...
... Semiconductor element (chip), 5 ... Electrode (on chip), 6 ... Sealing resin FIG. 4 is a perspective view of the second embodiment of the present invention, and FIG. 4
FIG. 6 is a bottom view of the film-like insulator shown in FIG. 4. 1'...Film-like insulator (flat type), 2...
...Conductive wiring pattern, 3...Lead, 4.
... Semiconductor element (chip), 5 ... Electrode (on the chip), 6 ... Sealing resin. Agent Patent Attorney Susumu Uchihara α) ξtsu

Claims (1)

【特許請求の範囲】[Claims] 導電配線パターンを有するフィルム状の絶縁体によって
半導体素子(チップ)の電極とリードが電気的接続され
ていることを特徴とする半導体装置。
A semiconductor device characterized in that electrodes and leads of a semiconductor element (chip) are electrically connected by a film-like insulator having a conductive wiring pattern.
JP1072587A 1989-03-24 1989-03-24 Semiconductor device Pending JPH02251161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1072587A JPH02251161A (en) 1989-03-24 1989-03-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1072587A JPH02251161A (en) 1989-03-24 1989-03-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH02251161A true JPH02251161A (en) 1990-10-08

Family

ID=13493666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1072587A Pending JPH02251161A (en) 1989-03-24 1989-03-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH02251161A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08124957A (en) * 1994-10-28 1996-05-17 Nec Corp Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08124957A (en) * 1994-10-28 1996-05-17 Nec Corp Semiconductor integrated circuit

Similar Documents

Publication Publication Date Title
KR970706605A (en) POLYMER STUD GRID ARRAY
JPH0451053B2 (en)
KR910001950A (en) Balanced Capacitance Lead Frame for Integrated Circuit and Manufacturing Method Thereof
JPH02251161A (en) Semiconductor device
JPH02133942A (en) Ceramic-chip carrier type semiconductor device
JPH08250620A (en) Semiconductor device
JPH11218511A (en) Gas sensor
JPH03129840A (en) Resin-sealed semiconductor device
JP2587722Y2 (en) Semiconductor device
JPS63169746A (en) Semiconductor device
JPH0360050A (en) Semiconductor device
JPS63147339A (en) Semiconductor device
JPS60152073A (en) Sense of contact force sensor
JPH04144161A (en) Semiconductor integrated circuit device
JPH08250624A (en) Semiconductor device and its manufacture
JPS6236299Y2 (en)
JPS633461B2 (en)
JPH069152U (en) Semiconductor device
JPH062713U (en) Resin-sealed semiconductor device
JPS63150953A (en) Lead frame for semiconductor device
JPH0425037A (en) Semiconductor device
JPH01270361A (en) Semiconductor device and manufacture thereof
JPH05291478A (en) Plastic sealed semiconductor device
JPH0637234A (en) Semiconductor device
JPH08203964A (en) Semiconductor device