JPH062713U - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPH062713U JPH062713U JP041601U JP4160192U JPH062713U JP H062713 U JPH062713 U JP H062713U JP 041601 U JP041601 U JP 041601U JP 4160192 U JP4160192 U JP 4160192U JP H062713 U JPH062713 U JP H062713U
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- semiconductor element
- sealed
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
(57)【要約】
【目的】 複数個の半導体素子を搭載し、大容量化した
樹脂封止型半導体装置において、装置の信頼性を向上
し、高機能化を図るものである。
【構成】 長方形の半導体素子７および９を互に直角
に、かつ電極の向きを同じにして、ダイパット６上に絶
縁物質を介して積み重ねて固着し、それぞれの半導体素
子７および９の電極と４方向に設けたリード１２を金属
細線１１で接続し、樹脂モールド５で封止したものであ
る。
(57) [Abstract] [Purpose] To improve the reliability and enhance the functionality of a resin-sealed semiconductor device in which a plurality of semiconductor elements are mounted and which has a large capacity. [Structure] Rectangular semiconductor devices 7 and 9 are stacked at right angles to each other and the electrodes are oriented in the same direction, and they are stacked and fixed on a die pad 6 via an insulating material. The leads 12 provided in the direction are connected by the fine metal wires 11 and sealed by the resin mold 5.
Description
【０００１】[0001]
本考案は、大容量化しかつ高機能化することができる樹脂封止型半導体装置に 関するものである。 The present invention relates to a resin-encapsulated semiconductor device that can have a large capacity and high functionality.
【０００２】[0002]
図３は従来の樹脂封止型半導体装置を示す断面図である。図において、１Ａお よび１ＢはそれぞれＡU バンプ２を有し、互に背中合せに配置した長方形の半導 体素子、３はリードフレーム、４は半導体素子１Ａ、１ＢのＡU バンプ２とリー ドフレーム３を接続するＣU リード、５は樹脂モールドである。FIG. 3 is a sectional view showing a conventional resin-sealed semiconductor device. In the figure, 1A and 1B respectively have A U bumps 2, rectangular semiconductor elements arranged back to back with each other, 3 a lead frame, and 4 A U bumps 2 and leads of semiconductor elements 1A and 1B. C U leads 5 for connecting the frame 3 are resin molds.
【０００３】 この構成による樹脂封止型半導体装置の製造工程について説明する。まず、半 導体素子１Ａの電極にＡU バンプ２を形成し、このＡU バンプ２にＴＡＢのＣU リード４をインナーボンディングし、続いて、リードフレーム３にアウターボン ディングを施して接続する。さらに、リードフレーム３を裏返しにして、半導体 素子１Ｂに、再び上記の工程を繰り返すことにより、半導体素子１ＢのＡU バン プ２とリードフレーム３間をＣU リード４で接続する。その後、樹脂モールド５ を施こし、リードフレーム３を必要な形状に加工し、樹脂封止型半導体装置を形 成することができる。A manufacturing process of the resin-encapsulated semiconductor device having this configuration will be described. First, the electrode of semi-conductor elements 1A to form a A U bumps 2, the A U and the inner bonding the C U leads 4 of the TAB the bump 2, followed by connecting subjected to outer Bonn loading the lead frame 3. Further, the lead frame 3 is turned upside down, and the semiconductor device 1B is subjected to the above steps again to connect the A U bump 2 and the lead frame 3 of the semiconductor device 1B by the C U lead 4. After that, the resin mold 5 is applied, and the lead frame 3 is processed into a required shape to form a resin-sealed semiconductor device.
【０００４】 このようにして、樹脂封止型半導体装置の大きさは同一でも、半導体素子を複 数個搭載することができ、大容量化を達成することができる。Thus, even if the resin-encapsulated semiconductor device has the same size, a plurality of semiconductor elements can be mounted, and a large capacity can be achieved.
【０００５】[0005]
しかしながら、上記構成の樹脂封止型半導体装置では、半導体素子がＣU リー ドで保持されているだけのため、樹脂モールド時に、樹脂の流れにより、半導体 素子が動き、樹脂モールド表面に半導体素子が露出すること、ＡU バンプとＣU リードの接続のため、温度サイクル試験時に接続不良が起こること、ＣU リード が腐食し、接続不良を起こすこと、複数の半導体素子の電極から同一リードフレ ームに接続するため、各々の半導体素子を個別に機能させられないこと、という 問題点があった。However, in the resin-encapsulated semiconductor device having the above configuration, since the semiconductor element is only held by the C U lead, the semiconductor element moves due to the flow of resin during resin molding, and the semiconductor element is formed on the resin mold surface. Exposed, connection failure during temperature cycle test due to connection between A U bump and C U lead, corrosion of C U lead causing connection failure, same lead frame from electrodes of multiple semiconductor devices However, there is a problem in that each semiconductor element cannot be individually functioned because it is connected to.
【０００６】 本考案は、以上述べた半導体素子が樹脂モールド表面に露出すること、温度サ イクル時に接続不良が起こること、水分の浸入によりＣU リードが腐食すること 、複数の半導体素子を個別に機能させられないこと、の問題点を除去するため、 少なくとも２個の長方形の半導体素子を互に直角にかつ電極の向きを同じにして 、ダイパット上に固定した優れた樹脂封止型半導体装置を提供することを目的と する。According to the present invention, the semiconductor element described above is exposed on the resin mold surface, a connection failure occurs at the temperature cycle, the C U lead corrodes due to the infiltration of water, and a plurality of semiconductor elements are individually separated. In order to eliminate the problem of not being able to function, an excellent resin-sealed semiconductor device in which at least two rectangular semiconductor elements are fixed at right angles to each other and the electrodes have the same direction and fixed on the die pad is provided. The purpose is to provide.
【０００７】[0007]
本考案に係る樹脂封止型半導体装置は、少なくとも２個の長方形の半導体素子 を互に直角に、かつ電極の向きを同じにしてダイパット上に絶縁物質を介して積 み重ねて固着し、それぞれの半導体素子の電極と４方向に設けたリードを金属細 線で接続し、樹脂モールドで封止したものである。 In the resin-sealed semiconductor device according to the present invention, at least two rectangular semiconductor elements are stacked at right angles to each other and the electrodes are oriented in the same direction, and are stacked and fixed on the die pad via an insulating material. The electrodes of the semiconductor element and the leads provided in four directions are connected with a metal wire and sealed with a resin mold.
【０００８】[0008]
本考案は信頼性の向上、および高機能化を図ることができる。 The present invention can improve reliability and enhance functionality.
【０００９】[0009]
図１は本考案に係る樹脂封止型半導体装置の一実施例を示す斜視図であり、図 ２はその断面図である。６はリードフレームのダイパット、７はこのダイパット ６上に導電性あるいは絶縁性の接着剤８を用いて固着した長方形の第１半導体素 子、９はこの第１半導体素子７上に互に直角に配置し、絶縁性の接着剤やテープ 等の固着手段１０を用いて固着した長方形の第２半導体素子、１１は第１半導体 素子７および第２半導体素子９の各電極と４方向に設けたリード１２を接続する 金属細線である。 FIG. 1 is a perspective view showing an embodiment of a resin-sealed semiconductor device according to the present invention, and FIG. 2 is a sectional view thereof. 6 is a die pad of the lead frame, 7 is a rectangular first semiconductor element fixed on the die pad 6 with a conductive or insulative adhesive 8, and 9 is on the first semiconductor element 7 at right angles to each other. A rectangular second semiconductor element 11 arranged and fixed by using a fixing means 10 such as an insulating adhesive or a tape, and 11 are leads provided in four directions with respective electrodes of the first semiconductor element 7 and the second semiconductor element 9. It is a thin metal wire that connects 12 together.
【００１０】 次に、上記構成による樹脂封止型半導体装置の製造工程について説明する。ま ず、あらかじめエッチング加工およびプレス加工で所定のパターンに形成し、必 要な表面処理（Ａg 、ＡU メッキ等）を施したリードフレームのダイパット６上 に、第１半導体素子７を導電性あるいは絶縁性の接着剤８を用いて固着する。そ して、この第１半導体素子７上に、第２半導体素子９を直角に、絶縁性の接着剤 、テープなどの固着手段１０で固着、あるいは第２半導体素子９の裏面にあらか じめ絶縁性の物質をコーティングしたもので固着する。その後、第１半導体素子 ７および第２半導体素子９上の導出すべき電極とリード１２を金属細線１１で接 続する。そして、樹脂モールド５を施し、必要に応じて所定の形状にリードを加 工することにより、半導体装置を形成することができる。Next, a manufacturing process of the resin-encapsulated semiconductor device having the above structure will be described. First, the first semiconductor element 7 is electrically conductive on the die pad 6 of the lead frame, which is formed into a predetermined pattern by etching and pressing in advance and is subjected to the necessary surface treatment (A g , A U plating, etc.). Alternatively, the insulating adhesive 8 is used for fixing. Then, the second semiconductor element 9 is fixed on the first semiconductor element 7 at a right angle by a fixing means 10 such as an insulating adhesive or a tape, or on the back surface of the second semiconductor element 9 in advance. Fix with an insulating material coated. After that, the leads 12 on the first semiconductor element 7 and the second semiconductor element 9 are connected to the leads 12 by the fine metal wires 11. Then, the resin mold 5 is applied, and if necessary, the leads are processed into a predetermined shape to form a semiconductor device.
【００１１】 なお、上述の実施例では、半導体素子を２個積み重ねて固着した場合を示した が、これに限定しないことはもちろんである。In the above-described embodiment, the case where two semiconductor elements are stacked and fixed is shown, but it goes without saying that the invention is not limited to this.
【００１２】[0012]
以上詳細に説明したように、本考案に係る樹脂封止型半導体装置によれば、第 １半導体素子をダイパット上に固着し、第２半導体素子を第１半導体素子と互に 直角に絶縁物で固着し、電極とリードを金属細線で各々接続しているので、半導 体素子の樹脂モールド時の移動防止およびそれぞれの半導体素子を個別に機能さ せることができる。しかも、耐湿性、耐温度サイクル性等の信頼性を向上するこ とができる。また、同一の電極配置の半導体素子を用いて、半導体装置の容量、 機能を２倍にすることができる。さらに、各々の半導体素子を自由に組み合せて 、高機能化を図ることができるなどの効果がある。 As described above in detail, according to the resin-sealed semiconductor device of the present invention, the first semiconductor element is fixed on the die pad, and the second semiconductor element is made of an insulating material at right angles to the first semiconductor element. Since they are fixed and the electrodes and leads are connected to each other by thin metal wires, it is possible to prevent movement of the semiconductor element during resin molding and to make each semiconductor element function individually. In addition, reliability such as humidity resistance and temperature cycle resistance can be improved. Further, the capacity and function of the semiconductor device can be doubled by using the semiconductor elements having the same electrode arrangement. Further, there is an effect that each semiconductor element can be freely combined to achieve high functionality.
【図１】本考案に係る樹脂封止型半導体装置の一実施例
を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of a resin-sealed semiconductor device according to the present invention.
【図２】図１の断面図である。FIG. 2 is a cross-sectional view of FIG.
【図３】従来の樹脂封止型半導体装置を示す断面図であ
る。FIG. 3 is a cross-sectional view showing a conventional resin-sealed semiconductor device.
６ ダイパット ７ 第１半導体素子 ９ 第２半導体素子 １１ 金属細線 １２ リード 6 die pad 7 first semiconductor element 9 second semiconductor element 11 thin metal wire 12 lead
Claims (1)
とも２個の長方形の半導体素子を互に直角に、かつ電極
の向きを同じにしてダイパット上に絶縁物質を介して積
み重ねて固着し、それぞれの半導体素子の電極と４方向
に設けたリードを金属細線で接続し、樹脂モールドで封
止してなる樹脂封止型半導体装置。1. In a resin-sealed semiconductor device, at least two rectangular semiconductor elements are stacked at a right angle to each other and the electrodes are oriented in the same direction, and are stacked and fixed on a die pad via an insulating material. A resin-sealed semiconductor device in which electrodes of a semiconductor element and leads provided in four directions are connected with a thin metal wire and sealed with a resin mold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP041601U JPH062713U (en) | 1992-06-17 | 1992-06-17 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP041601U JPH062713U (en) | 1992-06-17 | 1992-06-17 | Resin-sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH062713U true JPH062713U (en) | 1994-01-14 |
Family
ID=12612909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP041601U Pending JPH062713U (en) | 1992-06-17 | 1992-06-17 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH062713U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11721618B2 (en) | 2019-07-16 | 2023-08-08 | Tdk Corporation | Electronic component package |
-
1992
- 1992-06-17 JP JP041601U patent/JPH062713U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11721618B2 (en) | 2019-07-16 | 2023-08-08 | Tdk Corporation | Electronic component package |
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