JPS6316903B2 - - Google Patents

Info

Publication number
JPS6316903B2
JPS6316903B2 JP57116532A JP11653282A JPS6316903B2 JP S6316903 B2 JPS6316903 B2 JP S6316903B2 JP 57116532 A JP57116532 A JP 57116532A JP 11653282 A JP11653282 A JP 11653282A JP S6316903 B2 JPS6316903 B2 JP S6316903B2
Authority
JP
Japan
Prior art keywords
oxide film
silicon oxide
silicon
thermally
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57116532A
Other languages
English (en)
Japanese (ja)
Other versions
JPS596557A (ja
Inventor
Kunyuki Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57116532A priority Critical patent/JPS596557A/ja
Publication of JPS596557A publication Critical patent/JPS596557A/ja
Publication of JPS6316903B2 publication Critical patent/JPS6316903B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/012—
    • H10W10/13—

Landscapes

  • Element Separation (AREA)
JP57116532A 1982-07-05 1982-07-05 半導体装置の製造方法 Granted JPS596557A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57116532A JPS596557A (ja) 1982-07-05 1982-07-05 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57116532A JPS596557A (ja) 1982-07-05 1982-07-05 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS596557A JPS596557A (ja) 1984-01-13
JPS6316903B2 true JPS6316903B2 (enExample) 1988-04-11

Family

ID=14689451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57116532A Granted JPS596557A (ja) 1982-07-05 1982-07-05 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS596557A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6321848A (ja) * 1986-07-16 1988-01-29 Sanyo Electric Co Ltd 素子分離領域の形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50123275U (enExample) * 1974-03-22 1975-10-08
JPS5154378A (en) * 1974-11-07 1976-05-13 Fujitsu Ltd Handotaisochino seizohoho
JPS56125859A (en) * 1980-03-06 1981-10-02 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS596557A (ja) 1984-01-13

Similar Documents

Publication Publication Date Title
US4743566A (en) Method of manufacturing a semiconductor device, in which a silicon slice is locally provided with field oxide with a channel stopper
JPH0644563B2 (ja) シリコン基板上で半導体素子を分離する方法
US5236862A (en) Method of forming oxide isolation
JP2746225B2 (ja) 半導体装置及びその製造方法
US5661072A (en) Method for reducing oxide thinning during the formation of a semiconductor device
US5369052A (en) Method of forming dual field oxide isolation
US5422300A (en) Method for forming electrical isolation in an integrated circuit
JPH06163532A (ja) 半導体素子分離方法
JP3171810B2 (ja) 素子分離酸化膜の製造方法
JPH0628282B2 (ja) 半導体装置の製造方法
JPH0817813A (ja) 半導体装置の製造方法
JPS6316903B2 (enExample)
JPH05251637A (ja) 半導体装置およびその製造方法
JPS5856436A (ja) 半導体装置の製造方法
JPH079930B2 (ja) 半導体装置の製造方法
JPS6359538B2 (enExample)
JPH07176742A (ja) 半導体装置の製造方法及び半導体装置
JPS6231492B2 (enExample)
JPS63155747A (ja) 半導体装置の製造方法
JPS5893252A (ja) 半導体装置及びその製造方法
JPH0258778B2 (enExample)
JPH065588A (ja) 半導体装置の製造方法
JPS6117143B2 (enExample)
JP2533141B2 (ja) 半導体装置の製造方法
JPH0267728A (ja) 素子分離用酸化膜の形成方法