JPS63157483A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS63157483A
JPS63157483A JP61306033A JP30603386A JPS63157483A JP S63157483 A JPS63157483 A JP S63157483A JP 61306033 A JP61306033 A JP 61306033A JP 30603386 A JP30603386 A JP 30603386A JP S63157483 A JPS63157483 A JP S63157483A
Authority
JP
Japan
Prior art keywords
intermediate layer
semiconductor device
layer
type
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61306033A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0543306B2 (enrdf_load_stackoverflow
Inventor
Hideo Yamagishi
英雄 山岸
Kazunaga Tsushimo
津下　和永
Yoshinori Yamaguchi
美則 山口
Kenji Kobayashi
健二 小林
Akihiko Hiroe
広江　昭彦
Hitoshi Nishio
仁 西尾
Seishiro Mizukami
水上　誠志郎
Yoshihisa Owada
善久 太和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP61306033A priority Critical patent/JPS63157483A/ja
Publication of JPS63157483A publication Critical patent/JPS63157483A/ja
Publication of JPH0543306B2 publication Critical patent/JPH0543306B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
JP61306033A 1986-12-22 1986-12-22 半導体装置 Granted JPS63157483A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61306033A JPS63157483A (ja) 1986-12-22 1986-12-22 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61306033A JPS63157483A (ja) 1986-12-22 1986-12-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS63157483A true JPS63157483A (ja) 1988-06-30
JPH0543306B2 JPH0543306B2 (enrdf_load_stackoverflow) 1993-07-01

Family

ID=17952261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61306033A Granted JPS63157483A (ja) 1986-12-22 1986-12-22 半導体装置

Country Status (1)

Country Link
JP (1) JPS63157483A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04154175A (ja) * 1990-10-17 1992-05-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2005322707A (ja) * 2004-05-07 2005-11-17 Mitsubishi Heavy Ind Ltd 集積型太陽電池
JP2006310694A (ja) * 2005-05-02 2006-11-09 Kaneka Corp 集積化多接合薄膜光電変換装置
US7915611B2 (en) 2007-11-16 2011-03-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
CN110311014A (zh) * 2019-07-08 2019-10-08 绵阳金能移动能源有限公司 一种降低柔性铜铟镓硒太阳电池串联电阻的方法
US11251321B2 (en) 2016-02-03 2022-02-15 Soitec Engineered substrate with embedded mirror

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108779A (en) * 1979-02-14 1980-08-21 Sharp Corp Thin film solar cell
JPS5633889A (en) * 1979-08-28 1981-04-04 Rca Corp Amorphous silicon solar battery
JPS6191974A (ja) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd 耐熱性マルチジヤンクシヨン型半導体素子
JPS6191973A (ja) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd 耐熱性薄膜光電変換素子およびその製法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108779A (en) * 1979-02-14 1980-08-21 Sharp Corp Thin film solar cell
JPS5633889A (en) * 1979-08-28 1981-04-04 Rca Corp Amorphous silicon solar battery
JPS6191974A (ja) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd 耐熱性マルチジヤンクシヨン型半導体素子
JPS6191973A (ja) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd 耐熱性薄膜光電変換素子およびその製法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04154175A (ja) * 1990-10-17 1992-05-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2005322707A (ja) * 2004-05-07 2005-11-17 Mitsubishi Heavy Ind Ltd 集積型太陽電池
JP2006310694A (ja) * 2005-05-02 2006-11-09 Kaneka Corp 集積化多接合薄膜光電変換装置
US7915611B2 (en) 2007-11-16 2011-03-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US8093590B2 (en) 2007-11-16 2012-01-10 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US11251321B2 (en) 2016-02-03 2022-02-15 Soitec Engineered substrate with embedded mirror
CN110311014A (zh) * 2019-07-08 2019-10-08 绵阳金能移动能源有限公司 一种降低柔性铜铟镓硒太阳电池串联电阻的方法
CN110311014B (zh) * 2019-07-08 2020-11-24 绵阳金能移动能源有限公司 一种降低柔性铜铟镓硒太阳电池串联电阻的方法

Also Published As

Publication number Publication date
JPH0543306B2 (enrdf_load_stackoverflow) 1993-07-01

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