JPS63154984A - 中性子検出面 - Google Patents

中性子検出面

Info

Publication number
JPS63154984A
JPS63154984A JP30291386A JP30291386A JPS63154984A JP S63154984 A JPS63154984 A JP S63154984A JP 30291386 A JP30291386 A JP 30291386A JP 30291386 A JP30291386 A JP 30291386A JP S63154984 A JPS63154984 A JP S63154984A
Authority
JP
Japan
Prior art keywords
uranium
metal
layer
neutron detection
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30291386A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518394B2 (enExample
Inventor
Koichiro Oba
大庭　弘一郎
Katsuyuki Kinoshita
勝之 木下
Ikuo Hayashi
郁夫 林
Chiyoe Yamanaka
山中　千代衛
Masanori Yamanaka
山中　正宣
Hideaki Niki
仁木　秀明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
University of Osaka NUC
Original Assignee
Hamamatsu Photonics KK
Osaka University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK, Osaka University NUC filed Critical Hamamatsu Photonics KK
Priority to JP30291386A priority Critical patent/JPS63154984A/ja
Publication of JPS63154984A publication Critical patent/JPS63154984A/ja
Publication of JPH0518394B2 publication Critical patent/JPH0518394B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Measurement Of Radiation (AREA)
JP30291386A 1986-12-19 1986-12-19 中性子検出面 Granted JPS63154984A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30291386A JPS63154984A (ja) 1986-12-19 1986-12-19 中性子検出面

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30291386A JPS63154984A (ja) 1986-12-19 1986-12-19 中性子検出面

Publications (2)

Publication Number Publication Date
JPS63154984A true JPS63154984A (ja) 1988-06-28
JPH0518394B2 JPH0518394B2 (enExample) 1993-03-11

Family

ID=17914620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30291386A Granted JPS63154984A (ja) 1986-12-19 1986-12-19 中性子検出面

Country Status (1)

Country Link
JP (1) JPS63154984A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005001512A3 (de) * 2003-06-27 2006-03-02 Schwerionenforsch Gmbh Dosimeter zur erfassung hochenergetischer neutronenstrahlung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005001512A3 (de) * 2003-06-27 2006-03-02 Schwerionenforsch Gmbh Dosimeter zur erfassung hochenergetischer neutronenstrahlung
US7465937B2 (en) 2003-06-27 2008-12-16 Gesellschaft für Schwerionenforschung mbH Dosimeter for the detection of high-energy neutron radiation

Also Published As

Publication number Publication date
JPH0518394B2 (enExample) 1993-03-11

Similar Documents

Publication Publication Date Title
Weaver Adhesion of thin films
US7400042B2 (en) Substrate with adhesive bonding metallization with diffusion barrier
CA2357583A1 (fr) Procede de realisation d'un revetement de protection formant barriere thermique avec sous-couche de liaison sur un substrat en superalliage et piece obtenue
US4796083A (en) Semiconductor casing
EP3174084B1 (en) Method for manufacturing radiation window and a radiation window
JPS5846059B2 (ja) 半導体装置
JPS63154984A (ja) 中性子検出面
US20030034485A1 (en) Semiconductor device
US6943354B2 (en) Radiation detector
JPS56142633A (en) Forming method for back electrode of semiconductor wafer
EP3791418B1 (en) Method for manufacturing a multilayer radiation window and a multilayer radiation window
JP2895554B2 (ja) 多層被膜を有する真空容器及び真空機器用部品
JP3134645B2 (ja) 太陽電池モジュール
JPH10135150A (ja) ワークピースの処理方法
JPS60258462A (ja) 表面硬化された軟質金属基材
JPS5835989A (ja) 非晶質光半導体装置
TW394997B (en) Stress reduction of the titanium nitride layer with collimator
JPS58101432A (ja) 半導体ペレツトの裏面電極構造
JPS6235361A (ja) フオトマスク材料
JPS5833833A (ja) 半導体装置の電極形成法
JPS63236246A (ja) イメ−ジ管
JPH07283225A (ja) バンプ電極を有する回路基板
JPH0413102A (ja) シンクロトロン放射光用反射ミラー
JPS61111580A (ja) 薄膜の積層接着方法
JPS5835986A (ja) シヨツトキバリアダイオ−ドおよびその製造法

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees