JPH0518394B2 - - Google Patents
Info
- Publication number
- JPH0518394B2 JPH0518394B2 JP30291386A JP30291386A JPH0518394B2 JP H0518394 B2 JPH0518394 B2 JP H0518394B2 JP 30291386 A JP30291386 A JP 30291386A JP 30291386 A JP30291386 A JP 30291386A JP H0518394 B2 JPH0518394 B2 JP H0518394B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- uranium
- neutron detection
- detection surface
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Measurement Of Radiation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30291386A JPS63154984A (ja) | 1986-12-19 | 1986-12-19 | 中性子検出面 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30291386A JPS63154984A (ja) | 1986-12-19 | 1986-12-19 | 中性子検出面 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63154984A JPS63154984A (ja) | 1988-06-28 |
| JPH0518394B2 true JPH0518394B2 (enExample) | 1993-03-11 |
Family
ID=17914620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30291386A Granted JPS63154984A (ja) | 1986-12-19 | 1986-12-19 | 中性子検出面 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63154984A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7465937B2 (en) | 2003-06-27 | 2008-12-16 | Gesellschaft für Schwerionenforschung mbH | Dosimeter for the detection of high-energy neutron radiation |
-
1986
- 1986-12-19 JP JP30291386A patent/JPS63154984A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63154984A (ja) | 1988-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5901901A (en) | Semiconductor assembly with solder material layer and method for soldering the semiconductor assemly | |
| US20100294263A1 (en) | Radiation-selective absorber coating and absorber tube with radiation-selective absorber coating | |
| EP1722004B1 (en) | Substrate with a metallization bonding layer | |
| JPS5846059B2 (ja) | 半導体装置 | |
| EP3174084B1 (en) | Method for manufacturing radiation window and a radiation window | |
| US5851852A (en) | Die attached process for SiC | |
| JPH0518394B2 (enExample) | ||
| JP2758529B2 (ja) | 反射型光電面および光電子増倍管 | |
| JPS56142633A (en) | Forming method for back electrode of semiconductor wafer | |
| JPH04154033A (ja) | X線回転アノード | |
| JPS5835989A (ja) | 非晶質光半導体装置 | |
| JPS6220338A (ja) | 半導体装置の製造方法 | |
| JPH10135150A (ja) | ワークピースの処理方法 | |
| JPS5833833A (ja) | 半導体装置の電極形成法 | |
| JPS58101432A (ja) | 半導体ペレツトの裏面電極構造 | |
| JPS6150217B2 (enExample) | ||
| JPS6348142B2 (enExample) | ||
| JPS6324533A (ja) | X線管タ−ゲット | |
| JPH03251800A (ja) | X線照射装置のx線導出窓とその製造方法 | |
| JPS63161631A (ja) | シリコン半導体素子 | |
| JPH0682630B2 (ja) | 半導体素子の多層電極の製造方法 | |
| JPH0325977A (ja) | ショットキーバリアダイオードの製造方法 | |
| JPH0240968A (ja) | 半導体放射線検出器およびその製造方法 | |
| JPS58157178A (ja) | 光電変換装置の製造方法 | |
| JPH06204513A (ja) | 太陽電池用オーミック電極の形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |