JPS63142880A - Multi-beam semiconductor laser - Google Patents
Multi-beam semiconductor laserInfo
- Publication number
- JPS63142880A JPS63142880A JP29026586A JP29026586A JPS63142880A JP S63142880 A JPS63142880 A JP S63142880A JP 29026586 A JP29026586 A JP 29026586A JP 29026586 A JP29026586 A JP 29026586A JP S63142880 A JPS63142880 A JP S63142880A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser
- leading
- junction
- out electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims abstract description 4
- 238000005219 brazing Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010931 gold Substances 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 239000012212 insulator Substances 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000272814 Anser sp. Species 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003836 solid-state method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Die Bonding (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はマルチビーム半導体レーザをジャンクションダ
ウンでヒートシンクに固着する溝道に関するものでめる
・
〔従来の技術〕
従来のマルチビーム半導体レーザのヒートシンクへのマ
ウント方法は、第４７回応用物理学会学術講演会講演予
稿集Ｐ１５９、−演番号２７ｐ−Ｔ−１１にあるように
、ジャンクションアップでマウントされてい友、これを
＄２図で説明する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a groove path for fixing a multi-beam semiconductor laser to a heat sink by junction down. [Prior Art] Heat sink of a conventional multi-beam semiconductor laser The mounting method for the 47th Japan Society of Applied Physics Academic Conference Proceedings P159, performance number 27p-T-11 shows how to mount it by junction up. This will be explained using a $2 diagram.
３組の発光部２０６ｔ％つレーザ２０４が、エツチング
により分離されてお９、電極框ヒートシンク２０１接着
側は共通となっていて、発光部２０６側はそれぞれ、ワ
イヤー２０５のボンディングで別個に取り付けられ、そ
れぞれの発光５２０６は独立に制御できるようになって
いる。Three sets of light emitting parts 206t% lasers 204 are separated by etching 9, the bonding side of the electrode frame heat sink 201 is common, and the light emitting parts 206 sides are each attached separately by bonding with wires 205. Each light emission 5206 can be controlled independently.
このように発光部２０６側が、ヒートシンク２０１とは
逆側になるよう接着されている。この接着万ｆ：は、発
光部２０６すなわちｐ−ｎジャンクションが上側にある
九めジャンクション・アップと呼ばれている。ヒートシ
ンク２０１ｉ１ノーザ発元５２０６付近で兄生じｔ熱の
放熱のために使用されている。In this way, the light emitting part 206 side is bonded so that it is on the opposite side from the heat sink 201. This adhesion is called a ninth junction up in which the light emitting portion 206, that is, the p-n junction is on the upper side. The heat sink 201i1 is used to dissipate the heat generated near the norther generator 5206.
しかし上記の従来技術では、１ノ−ザビーム発光部がヒ
ートシンクから離れているため、発光部で発生する熱の
放熱性が悪く、高出力１ノ−ザには不向きであった。す
なわち、熱による半導体レーザ発光部の温度上昇によっ
て転位ループやダークラインの発生が活性化され、寿命
が短かくなるとか、しきい値電流の上昇、外部微分量子
効率の減少など、信頼性に問題点が６つ几。However, in the above-mentioned conventional technology, since the one-noser beam light emitting section is located far from the heat sink, the heat dissipation property of the heat generated in the light-emitting section is poor, making it unsuitable for a high-output one-noser. In other words, the rise in temperature of the semiconductor laser light emitting part due to heat activates the generation of dislocation loops and dark lines, resulting in reliability problems such as shortened lifetime, increased threshold current, and decreased external differential quantum efficiency. There are 6 points.
さらに上記の問題点に加えて、実装上半導体レーザの上
部電極の数だけ、直接ワイヤーポンディングするｔめ、
ボンディング不良が起こりやすいという問題点も有して
い友。Furthermore, in addition to the above-mentioned problems, since the number of upper electrodes of the semiconductor laser is directly wire bonded,
It also has the problem of easy bonding failure.
上記問題点を解決する九めに、本発明のマルチビーム半
導体レーザに、複数のレーザビーム対が独立に放射でき
るマルチビーム半導体レーザにおいて、放熱板上に絶縁
膜全層し、前記絶縁膜上に形成した前記レーザビーム対
の数の導電材料配線を備え九基台と、前記マルチビーム
半導体１ノ−ザがろう材を介して、ジャンクションダウ
ンで固着されていることを特徴とするジャンクションダ
ウンとに、半導体レーザのｐ−ｎジャンクションが基台
側になる工うな固層方法金いう。Ninthly, in order to solve the above problems, in the multi-beam semiconductor laser of the present invention, in which a plurality of pairs of laser beams can be emitted independently, an insulating film is formed in all layers on the heat sink. 9 bases each having conductive material wiring in the number of the formed laser beam pairs; and a junction down, characterized in that the multi-beam semiconductor 1 noser is fixed by a junction down via a brazing material. In this case, the semiconductor laser's p-n junction is on the base side, which is called a solid-state method.
以下、本発明について、実施例？こ基づき詳細に伐明す
る。第１囚は本発明のマルナビーム半導体１ノーザの実
肢方法を示′ｒ要部斜視図である。工程を追って伐明す
ると、放熱板の役目をは几すＳ１ヒートシンク１０１上
に絶縁体であり比較的熱電導率の人きいＡＩｔ＠０３
１０２’、（７う、ｘ： −ｒ ＣＶ Ｄで堆積し、引
出し電極用の４ｖＬ材料、例えばＡｕｔスパッタ法で成
膜した後、普通のフォトリングラフィ工程により、パタ
ーニングし、引出し電極１０３全形成し基台とする。本
実施例では、スリービーム半導体１）−ザを用い７ｔた
め、３個の引出し電極１０３がある。Hereinafter, examples of the present invention will be described. Based on this, I will explain in detail. The first figure is a perspective view of the main part of the Marna Beam semiconductor 1 noser according to the present invention. Following the process, we find that on the S1 heat sink 101, which plays the role of a heat sink, there is an insulator with relatively high thermal conductivity.
102', (7U, In this embodiment, a three-beam semiconductor 1) is used and has a thickness of 7t, so there are three extraction electrodes 103.
一方、半導体１ノ−ザ１０４の詳しい溝道に第５図に示
す、第１導電型の半導体単結晶基板３０１上に、順次第
１導電型のバッファ層３０２、第１導電型のクラッド層
５０３、ノンドープ活性層３０４、第２導電型のクラッ
ド層３０５、第２導電型のコンタクト層３０６がエピタ
キシャルｇ長され、第１導を型側の電極３０８、第２導
電型側の電極３０７をそれぞれ半導体単結晶基板３０１
、コンタクト層３０６側に蒸着で形成しｔ後、オーミッ
ク接触するようアニールし、リアクティブイオンビーム
エツチング法等で、活性層５０４ｉ３つに分離する。１
ノ−ザビームは、３組の発光部１０６からエツチングス
トライプの長手方向に放射される。On the other hand, in the detailed groove path of the semiconductor 1 nose 104, as shown in FIG. , the non-doped active layer 304, the cladding layer 305 of the second conductivity type, and the contact layer 306 of the second conductivity type are epitaxially lengthened. Single crystal substrate 301
, is formed on the contact layer 306 side by vapor deposition, and then annealed to make ohmic contact, and separated into three active layers 504i by reactive ion beam etching or the like. 1
The nose beam is emitted from three sets of light emitting sections 106 in the longitudinal direction of the etching stripe.
この半導体レーザチップを第１図に示すようジャンクシ
ョンダウンでろう材を介して接着し、金ワイヤ−１０５
で共通電極及び引出し電極１０３をボンディングし、各
電極の配線全形成する。This semiconductor laser chip is bonded via a brazing material with a junction down as shown in Figure 1, and gold wire-105
The common electrode and the lead electrode 103 are bonded, and all wiring for each electrode is formed.
本実施例でに、スリービーム半導体１ノ−ザを用いて説
明したが、ツービーム半導体レ−ザとか、スリービーム
以上の発光８を所有する半導体レーザについても当然同
様の実装方＠全使用できる。Although this embodiment has been described using a three-beam semiconductor laser, the same mounting method can also be used for a two-beam semiconductor laser or a semiconductor laser having three or more beams of light.
本発明の効果Ｖユ、マルチビーム半導体１ノ−ザをジャ
ンクションダウンでヒートシンクにＮ！することにより
、１ノ−ザ発元部で発生する熱の放熱性全向上させるこ
とができ、１ノ一ザ発元部での転位ループやダークライ
ンの発生を抑制でき、長寿命で信頼性の高いレーザに提
供することができる。The effect of the present invention is to connect a multi-beam semiconductor 1 nose to a heat sink with a junction down! By doing so, it is possible to completely improve the heat dissipation of the heat generated at the 1-noser source, suppress the occurrence of dislocation loops and dark lines at the 1-noser source, and ensure long life and reliability. Can be provided with high laser beams.
また、長時間駆動に対してしきい値電流、外部微分を子
効率の変動金少なくすることができる。Further, it is possible to reduce fluctuations in threshold current and external differential efficiency for long-time driving.
さらに、半導体１ノ−ザ上にボンティングする回数は１
回でよいため、ボンディング不良による欠陥品を少なく
することができ、歩留′！！シを大幅に同上するＯとが
できる。Furthermore, the number of times of bonding on the semiconductor 1 nose is 1.
Since it only takes a few times, it is possible to reduce the number of defective products due to poor bonding, and improve the yield rate. ! It is possible to obtain O which greatly equates to C.
第１図は、本発明のマルナビーム半導体１ノーザを示す
妾都召視図。
第２図は、従来のマルチビーム半２４坏レー”Ｑ−示す
要部斜視図。
第３図は、本発明のスリービーム半導体１ノーザナツプ
の斜視図。
１０１・・・Ｓ１ヒートシンク
１０２ ・・・ Ａ ｎ 鵞 ０３１０５・・・引
出し電極
１０４・・・半導体１ノ−ザ
１０５・・・金ワイヤ−
１０６・・・発光部
２０１・・・Ｓ１ヒートシンク
２０４・・・半導体レーザ
２０５・・・ワイヤー
２０６・・・発光部
３０１・・・半導体単結晶基板
３０２・・・バッファ膚
３０５・・・クラッド層
３０４・・・活性層
３０５・・・クラッド層
３０６・・・コンタクト層
３０７・・・電極
３０８・・・電極
以上
出願人 セイコーエプソン株式会社
代理人 弁理士 最 上 （、・・務：〜、２他−
′１名FIG. 1 is a perspective view showing a Marna Beam semiconductor 1 noser of the present invention. Fig. 2 is a perspective view of the main parts of a conventional multi-beam half-24 x relay. Fig. 3 is a perspective view of a three-beam semiconductor 1 norther nap of the present invention. 101...S1 heat sink 102...A n Goose 03105...Extraction electrode 104...Semiconductor 1 nose 105...Gold wire 106...Light emitting section 201...S1 heat sink 204...Semiconductor laser 205...Wire 206... - Light emitting part 301...Semiconductor single crystal substrate 302...Buffer skin 305...Clad layer 304...Active layer 305...Clad layer 306...Contact layer 307...Electrode 308... Electrodes and above Applicant Seiko Epson Co., Ltd. Representative Patent Attorney Mogami (...Affiliate: ~, 2 others-
'1 person
Claims (1)
半導体レーザにおいて、放熱板上に絶縁膜を有し、前記
絶縁膜上に形成した前記レーザビーム対の数の導電材料
配線を備えた基台と、前記マルチビーム半導体レーザが
ろう材を介して、ジャンクションダウンで同着されてい
ることを特徴とするマルチビーム半導体レーザ。In a multi-beam semiconductor laser capable of independently emitting a plurality of laser beam pairs, a base having an insulating film on a heat sink and having conductive material wiring formed on the insulating film as many as the number of the laser beam pairs; A multi-beam semiconductor laser, characterized in that the multi-beam semiconductor laser is bonded together by a junction down via a brazing material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29026586A JPS63142880A (en) | 1986-12-05 | 1986-12-05 | Multi-beam semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29026586A JPS63142880A (en) | 1986-12-05 | 1986-12-05 | Multi-beam semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63142880A true JPS63142880A (en) | 1988-06-15 |
Family
ID=17753900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29026586A Pending JPS63142880A (en) | 1986-12-05 | 1986-12-05 | Multi-beam semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63142880A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002057402A (en) * | 2000-08-10 | 2002-02-22 | Sony Corp | Semiconductor light-emitting element |
-
1986
- 1986-12-05 JP JP29026586A patent/JPS63142880A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002057402A (en) * | 2000-08-10 | 2002-02-22 | Sony Corp | Semiconductor light-emitting element |
| JP4538921B2 (en) * | 2000-08-10 | 2010-09-08 | ソニー株式会社 | Semiconductor light emitting device |
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