JPH02257689A - Multibeam semiconductor laser device - Google Patents

Abstract

PURPOSE:To reduce crosstalks among elements sufficiently, and to improve reliability by forming a sub-mount of a Cu-W sintered alloy, etc., coated with an insulator and mounting conductive material wirings in number corresponding to the number of laser beams onto the sub-mount. CONSTITUTION:An Al2O3 insulating film 102 is shaped onto a Cu-W sintered alloy substrate (a sub-mount) 101 through an electron-beam evaporation method, gold is vacuum-deposited and leading-out electrodes (conductive material wirings) 103 are formed through a photolithographic process. A multibeam semiconductor laser element 104 is die-bonded while indium is used as a wax material, and lastly the conductive material wirings 103 and the common electrode 106 of a multibeam semiconductor laser element are wire-bonded, thus shaping a multibeam semiconductor laser device. The conductive material wirings 103 in number corresponding to the number of laser beams are formed onto the sub-mount 101 particularly at that time. Accordingly, thermal crosstalks are difficult to be generated, thus extremely facilitating the design of a driver circuit, etc.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a multi-beam semiconductor laser device used in magneto-optical disks and the like.

[Prior Art] Conventionally, as shown in FIG. 2, in a multi-beam semiconductor laser device, an Al2O3 thin film 202 is formed on a Sl single crystal substrate 201 by electron beam evaporation,
A multi-beam semiconductor laser device 204 is bonded to a submount manufactured by vacuum-depositing an Au thin film and then performing a photolithography process using a brazing material with a junction down, and a common electrode 206 is formed using a gold wire 205. A multi-beam semiconductor laser device manufactured by wire bonding to the extraction electrode 203 has been known.

[Problems to be Solved by the Invention] However, such conventionally known multi-beam semiconductor laser devices use an 81 substrate as a submount material, so they are high-output multi-beam laser devices that have high thermal resistance and generate a large amount of heat. When a semiconductor laser element is mounted, the temperature rise becomes large and thermal crosstalk occurs between the semiconductor devices.

Further, there is a problem in that the operation of each semiconductor laser becomes unstable, or in severe cases, the worst case scenario is destruction of the device. Therefore, the object of the present invention is to obtain a multi-beam semiconductor laser device in which the crosstalk between elements is sufficiently small and the reliability is high.

[Means for Solving the Problems] In order to solve the above problems, the multi-beam semiconductor laser device of the present invention has a multi-beam semiconductor laser element that emits a plurality of laser beams independently, which is fixed on a submount with a junction down. In the multi-beam semiconductor laser device, the submount is a C
It is characterized by being made of u-W sintered alloy or CIJ-MO sintered alloy, and having conductive material wirings on the submount in a number corresponding to the number of laser beams.

[Implementation example] Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a perspective view of essential parts showing the structure of a multi-beam semiconductor laser device according to the present invention.

Next, the manufacturing process will be explained. Cu-W sintered alloy substrate 101
An Al2O3 insulating film 102 is formed thereon by electron beam evaporation, and then gold is vacuum evaporated and an extraction electrode 103 is manufactured through a photolithography process.

Next, the multi-beam semiconductor laser element 104 is die-bonded using indium as a brazing material, and finally the extraction electrode 1
03 and the common electrode 106 of the multi-beam semiconductor laser element
It is manufactured using wire bonding.

In addition, the structure of this multi-beam semiconductor laser device was
As shown in the figure.

n-T'j on the n-Type GaAs substrate 301
pe AI ll-3G a [! -7A S cladding layer 3021 GaAs active layer 303, p -T y
A double heterojunction structure substrate made by laminating a p-type GaAs cladding layer 304 and a p-TypeGaAs contact layer 305 was subjected to a photolithography process to form rib-shaped stripe regions. After that, a Zn5e layer 306 was selectively grown using metal-organic chemical vapor deposition, and a gold-zinc alloy electrode 307 was created using a vacuum evaporation method. A groove is formed to separate the elements. The depth of the groove is 50 μm1
The width was 30 μm.

The Cu-W sintered alloy has a thermal conductivity that is more than twice as good as that of Si, so extremely high reliability can be obtained.

Furthermore, since this multi-beam semiconductor laser device is mounted with junk silane down, even higher heat dissipation characteristics can be obtained.

Therefore, extremely high reliability can be obtained as a multi-beam semiconductor laser device.

In addition, since semiconductor lasers have the property that the drive current vs. output characteristic changes greatly due to slight changes in ambient temperature, the consumption that occurs when changing the output of adjacent semiconductor lasers in a normal multi-beam semiconductor laser device is also important. Temperature changes caused by changes in power cause thermal losstalk, which poses a serious problem, but this multi-beam semiconductor laser device hardly causes thermal losstalk due to its high heat dissipation characteristics, and can be used as a completely independent semiconductor laser.

Also, Cu-M instead of Cu-W sintered alloy.

A similar effect can be obtained by using a sintered alloy.

Although Al2O3 is used for the insulating film in this embodiment, other insulators such as 5io2 may of course be used.

Further, although the embodiment has been described with respect to a multi-beam semiconductor laser device using an AlGaAs-based multi-beam semiconductor laser device, it is of course possible to use a multi-beam semiconductor laser device using an InGaAsP-based multi-beam semiconductor laser device. Distributed feedback semiconductor laser (D
FB laser) A multi-beam semiconductor laser device using integrated multi-beam semiconductor laser elements may be used, or 2-
A multi-beam semiconductor laser device using a Group 6 multi-beam semiconductor laser device or a multi-beam semiconductor laser device using a quantum well-based multi-beam semiconductor laser device may be used, and a commonly used multi-beam semiconductor laser device may be used. Of course, there are no restrictions on the material system or structure of the semiconductor laser.

[Effects of the Invention] The multi-beam semiconductor laser device of the present invention has the following effects.

(1) Cu-W sintered alloy or Cu-Mo on the submount
Because it uses sintered alloy, a sintered material with high thermal conductivity, compared to conventionally used SI submounts, the element temperature is less likely to rise even when using a high-output semiconductor laser element, making it less likely to cause thermal loss or losstalk. Design of drive circuits etc. becomes extremely easy.

In addition, the element temperature is less likely to rise (this makes it possible to easily create an extremely reliable semiconductor laser device).

(2) Cu-W sintered alloy and Cu-Mo sintered alloy are G
aAs and thermal expansion coefficient can be perfectly matched, 81
Unlike the case where a single material such as the above is used for the submount, no mechanical stress is applied, so the reliability of the semiconductor laser device is further improved.

(3) By forming a film with strong contact resistance such as Al2O3 or 5i02, the electrode can be etched without etching the submount even if noble metals such as gold are used as the electrode material, making the electrode layout brighter. Since it is possible to increase the number of laser beams, it is possible to design it extremely easily even when there are a large number of laser beams.

[Brief explanation of drawings]

FIG. 1 is a perspective view showing a multi-beam semiconductor laser device of the present invention. FIG. 2 is a perspective view showing a conventional multi-beam semiconductor laser device. FIG. 3 is a perspective view showing the multi-beam semiconductor laser element portion of the multi-beam semiconductor laser device of the present invention. 101 ・ 102 ・ 103 ・ 104 ・ 105 ・ 106 ・ 201 ° 202 ° 203 ° 204 ・ 205 ・ 206 ・ 30 l. 302゜...Cu-W sintered alloy substrate...Al2O3 insulating film/extraction electrode...multi-beam semiconductor laser element...gold wire/common electrode St single crystal substrate Al2O3 thin film extraction electrode/multi-beam semiconductor laser element/gold wire・・Common electrode n-Type GaAs substrate n -T y p e A 1 [+・3G a Door A S cladding layer GaAs active layer p-Type A11l・3GI1.7AS cladding layer 303° 304° 305° 306° 307° p-T”!pe GaAs contact layer Zn5e layer Gold-zinc alloy electrode Above Applicant Seifu Ebson Co., Ltd. Representative Patent Attorney Kizobe Suzuki (1 other person) Cow 2 diagrams

Claims (1)

[Claims] In a multi-beam semiconductor laser device in which a multi-beam semiconductor laser element that emits multiple laser beams independently is fixed on a submount with a junction down,
The submount is made of a Cu-W sintered alloy or a Cu-Mo sintered alloy coated with an insulator, and has a number of conductive material wirings on the submount corresponding to the number of laser beams. Multi-beam semiconductor laser device.