JPS63139096A - 炭化珪素単結晶の製造方法 - Google Patents
炭化珪素単結晶の製造方法Info
- Publication number
- JPS63139096A JPS63139096A JP28498086A JP28498086A JPS63139096A JP S63139096 A JPS63139096 A JP S63139096A JP 28498086 A JP28498086 A JP 28498086A JP 28498086 A JP28498086 A JP 28498086A JP S63139096 A JPS63139096 A JP S63139096A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon carbide
- substrate
- carbide single
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28498086A JPS63139096A (ja) | 1986-11-27 | 1986-11-27 | 炭化珪素単結晶の製造方法 |
US07/124,732 US4865659A (en) | 1986-11-27 | 1987-11-24 | Heteroepitaxial growth of SiC on Si |
DE8787310423T DE3786148T2 (de) | 1986-11-27 | 1987-11-25 | Verfahren zur hetero-epitaktischen zuechtung. |
EP87310423A EP0269439B1 (en) | 1986-11-27 | 1987-11-25 | A heteroepitaxial growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28498086A JPS63139096A (ja) | 1986-11-27 | 1986-11-27 | 炭化珪素単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63139096A true JPS63139096A (ja) | 1988-06-10 |
JPH0327515B2 JPH0327515B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-04-16 |
Family
ID=17685571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28498086A Granted JPS63139096A (ja) | 1986-11-27 | 1986-11-27 | 炭化珪素単結晶の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63139096A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997039476A1 (fr) * | 1996-04-18 | 1997-10-23 | Matsushita Electric Industrial Co., Ltd. | ELEMENT EN SiC ET SON PROCEDE DE PRODUCTION |
US6273950B1 (en) | 1996-04-18 | 2001-08-14 | Matsushita Electric Industrial Co., Ltd. | SiC device and method for manufacturing the same |
JP2014205615A (ja) * | 2014-05-29 | 2014-10-30 | セイコーエプソン株式会社 | 立方晶炭化珪素半導体基板及び立方晶炭化珪素層 |
-
1986
- 1986-11-27 JP JP28498086A patent/JPS63139096A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997039476A1 (fr) * | 1996-04-18 | 1997-10-23 | Matsushita Electric Industrial Co., Ltd. | ELEMENT EN SiC ET SON PROCEDE DE PRODUCTION |
US6214107B1 (en) | 1996-04-18 | 2001-04-10 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing a SiC device |
US6273950B1 (en) | 1996-04-18 | 2001-08-14 | Matsushita Electric Industrial Co., Ltd. | SiC device and method for manufacturing the same |
JP2014205615A (ja) * | 2014-05-29 | 2014-10-30 | セイコーエプソン株式会社 | 立方晶炭化珪素半導体基板及び立方晶炭化珪素層 |
Also Published As
Publication number | Publication date |
---|---|
JPH0327515B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-04-16 |